Y
Yisu Yang
Researcher at University of Delaware
Publications - 33
Citations - 964
Yisu Yang is an academic researcher from University of Delaware. The author has contributed to research in topics: Silicon photonics & Hybrid silicon laser. The author has an hindex of 13, co-authored 20 publications receiving 861 citations. Previous affiliations of Yisu Yang include University of Toronto.
Papers
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Journal ArticleDOI
Low power 50 Gb/s silicon traveling wave Mach-Zehnder modulator near 1300 nm
Matthew Streshinsky,Ran Ding,Yang Liu,Ari Novack,Yisu Yang,Yangjin Ma,Xiaoguang Tu,Edward Koh Sing Chee,Andy Eu-Jin Lim,Patrick Guo-Qiang Lo,Tom Baehr-Jones,Michael Hochberg +11 more
TL;DR: A silicon traveling-wave Mach-Zehnder modulator near 1300 nm is demonstrated to operate at 50 Gb/s with a differential 2 Vpp signal at 0 V reverse bias, achieving a 800 fJ/bit power consumption.
Journal ArticleDOI
A Compact Low-Power 320-Gb/s WDM Transmitter Based on Silicon Microrings
Ran Ding,Yang Liu,Qi Li,Zhe Xuan,Yangjin Ma,Yisu Yang,Andy Eu-Jin Lim,Guo-Qiang Lo,Keren Bergman,Tom Baehr-Jones,Michael Hochberg +10 more
TL;DR: In this paper, the authors demonstrate a low-power WDM transmitter near a 1550-nm wavelength using silicon microrings, which achieves low energy-per-bit values of 36 fJ/bit under 2.4
Journal ArticleDOI
Germanium photodetector with 60 GHz bandwidth using inductive gain peaking
Ari Novack,Michael N. Gould,Yisu Yang,Zhe Xuan,Matthew Streshinsky,Yang Liu,Giovanni Capellini,Andy Eu-Jin Lim,Guo-Qiang Lo,Tom Baehr-Jones,Michael Hochberg +10 more
TL;DR: The results suggest that gain peaking is a generally applicable tool for increasing detector bandwidth in practical photonics systems without requiring the difficult process of lowering detector capacitance.
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A high-responsivity photodetector absent metal-germanium direct contact
Yi Zhang,Shuyu Yang,Yisu Yang,Michael N. Gould,Noam Ophir,Andy Eu-Jin Lim,Guo-Qiang Lo,Peter Magill,Keren Bergman,Tom Baehr-Jones,Michael Hochberg +10 more
TL;DR: A Ge-on-Si photodetector without doped Ge or Ge-metal contacts is reported, despite the simplified fabrication process, and it is demonstrated that dark current is less than 1µA under both bias conditions.
Journal ArticleDOI
Design and characterization of a 30-GHz bandwidth low-power silicon traveling-wave modulator
Ran Ding,Yang Liu,Qi Li,Yisu Yang,Yangjin Ma,Kishore Padmaraju,Andy Eu-Jin Lim,Guo-Qiang Lo,Keren Bergman,Tom Baehr-Jones,Michael Hochberg,Michael Hochberg,Michael Hochberg +12 more
TL;DR: In this paper, the authors present the design and characterization of a silicon PN junction traveling-wave Mach-Zehnder modulator near 1550-nm wavelength, which shows low modulation power of 640-fJ/bit at 40-Gb/s with a 1.6-V pp differential drive and 0-V DC bias.