A textured structure of a crystalline silicon solar cell that is mainly constructed by a plurality of micro-structures similar to inverted pyramids; the lower part of the micro-structure similar to the inverted pyramid is an inverted pyramidal structure, and the upper part thereof is an inverted circular truncated conical structure; and the top of the micro-structure similar to the inverted pyramid is selected from one or more of a circle, an oval, or a closed figure enclosed by multiple curves. Experiments prove that the conversion efficiency of a cell piece may be improved by 0.25-0.4%, thereby obtaining unexpected effects.

Textured structure of crystalline silicon solar cell and preparation method thereof

Provided is a solar cell with improved photoelectric conversion efficiency The solar cell includes a photoelectric conversion body and first and second electrodes The photoelectric conversion body includes a substrate made of semiconductor material The first and second electrodes are disposed at intervals on one main surface of the photoelectric conversion body Terraces each formed of a crystal plane are provided on a main surface of the substrate on the one main surface side of the photoelectric conversion body At least one of the terraces exists between the first electrode and the second electrode

Solar Cell and Method of Manufacturing the Same

PROBLEM TO BE SOLVED: To provide a photovoltaic device which is excellent in photoelectric conversion efficiency, in which degradation in photoelectric conversion efficiency that is caused by carrier re-combination on the rear surface side of the photovoltaic device is prevented.SOLUTION: A photovoltaic device includes a p-type semiconductor substrate 1 that contains an n-type impurity diffusion layer 2 in which second conductivity type impurity elements are diffused on one surface side and the other surface side, a light receiving surface side electrode 5 which is formed on one surface side of the p-type semiconductor substrate 1 by electrically connecting to the n-type impurity diffusion layer 2 formed on one surface side of the p-type semiconductor substrate 1, and a rear surface electrode 6 formed at least in a region except for an outer peripheral edge on the other surface side of the p-type semiconductor substrate 1. The n-type impurity diffusion layer 2 includes a low resistance n-type impurity diffusion layer 3 formed at least in a lower region of the light receiving surface side electrode 5 on one surface side of the p-type semiconductor substrate 1, and a high-resistance n-type impurity diffusion layer 4 which is formed in a region other than the low resistance n-type impurity diffusion layer 3 on one surface side of the p-type semiconductor substrate 1 as well as at the outer peripheral edge on the other surface side of the p-type semiconductor substrate 1, and has a sheet resistance higher than the low resistance n-type impurity diffusion layer.

Photovoltaic device and method of manufacturing the same, and photovoltaic module

An aqueous acidic etching solution suitable for texturing the surface of single crystal and polycrystal silicon substrates and containing, based on the complete weight of the solution, 3 to 10% by weight of hydrofluoric acid; 10 to 35% by weight of nitric acid; 5 to 40% by weight of sulfuric acid; and 55 to 82% by weight of water; a method for texturing the surface of single crystal and polycrystal silicon substrates comprising the step of (1) contacting at least one major surface of a substrate with the said aqueous acidic etching solution; (2) etching the at least one major surface of the substrate for a time and at a temperature sufficient to obtain a surface texture consisting of recesses and protrusions; and (3) removing the at least one major surface of the substrate from the contact with the aqueous acidic etching solution; and a method for manufacturing photovoltaic cells and solar cells using the said solution and the said texturing method.

Aqueous acidic etching solution and method for texturing the surface of single crystal and polycrystal silicon substrates

A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

Copper-assisted, anti-reflection etching of silicon surfaces

A solar cell manufacturing method provides a method of manufacturing a solar cell having a texture on a surface of a silicon substrate, to obtain the solar cell manufacturing method capable of manufacturing a solar cell of high performance in a simple manufacturing process. The solar cell manufacturing method includes a first process of forming a porous silicon layer on the surface of the silicon substrate by dipping the silicon substrate into a mixed aqueous solution of an oxidizing reagent containing a metal ion and hydrofluoric acid, and a second process of forming a texture by etching the surface of the silicon substrate after passing the first process, by dipping the silicon substrate into a mixed acid mainly containing hydrofluoric acid and nitric acid.[r]A method of manufacturing a solar cell having a texture on a surface of a silicon substrate includes first forming including forming a porous layer on the surface of the silicon substrate by dipping the silicon substrate into a mixed aqueous solution of oxidizing reagent containing metal ions and hydrofluoric acid; and second forming including forming a texture by etching the surface of the silicon substrate after the first forming by dipping the silicon substrate into a mixed acid mainly containing hydrofluoric acid and nitric acid.

Process for manufacturing solar cell

A method of manufacturing a solar cell having a texture on a surface of a silicon substrate includes first forming a porous layer on the surface of the silicon substrate by dipping the silicon substrate into a mixed aqueous solution of oxidizing reagent containing metal ions and hydrofluoric acid. Second, a texture is formed by etching the surface of the silicon substrate after the porous layer is formed, by dipping the silicon substrate into a mixed acid mainly containing hydrofluoric acid and nitric acid.

Method of manufacturing solar cell

Provided is a method for cleaning a silicon substrate involving: a first step for forming a porous layer on the surface of a silicon substrate by etching the surface of the silicon substrate by using a mixed aqueous solution of an oxidant and hydrofluoric acid, said mixed aqueous solution containing metal ions; a second step for texturizing the surface of the silicon substrate by etching the holes on the porous layer with a mixed acid of mainly hydrofluoric acid and nitric acid; a third step for etching the texturized surface of the silicon substrate by using an alkaline chemical liquid; and a fourth step for removing metal and organic impurities in the holes by generating air bubbles within the holes formed on the silicon substrate as a consequence of processing the silicon substrate etched by means of the alkaline chemical liquid with water containing ozone.

Method for cleaning silicon substrate, and method for producing solar cell

A method includes: a first step of forming a passivation film on a first surface of a crystalline silicon substrate of a first conductive type; a second step of diffusing an element of a second conductive type into a second surface of the crystalline silicon substrate by thermal diffusion to form a diffusion layer, whereby a pn junction is formed; a third step of forming an antireflection film on the diffusion layer; a fourth step of disposing a first electrode paste on the second surface of the crystalline silicon substrate; a fifth step of disposing a second electrode paste on the passivation film; and a sixth step of firing the first electrode paste and the second electrode paste to form electrodes.

Method for manufacturing solar battery cell

Provided are a wire electric discharge machining method for poorly conductive materials, such as solar cell silicon, and a semiconductor wafer manufacturing method and a solar battery cell manufacturing method based on the wire electric discharge machining method. Electrical discharge machining of a high volume resistivity, hard and brittle materials, having a volume resistivity that is equal to or higher than 0.5 Ω·cm and equal to or lower than 5 Ω·cm is performed by applying a pulse voltage having a pulse width that is equal to or higher than 1 μsec and equal to or lower than 4 μsec and having a peak current at the time of machining a wire electrode that is equal to or higher than 10A and equal to or lower than 50A to a wire electrode and generating a discharge pulse between the wire electrode and a subject to be machined.

Yoichiro Nishimoto

Papers

Process for manufacturing solar cell

Method of manufacturing solar cell

Method for cleaning silicon substrate, and method for producing solar cell

Method for manufacturing solar battery cell

Wire electrical discharge machining method, semiconductor wafer manufacturing method and solar battery cell manufacturing method