Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

An organic light-emitting display includes a first substrate which includes a pixel region, and an encapsulation region which surrounds the pixel region, an organic light-emitting device which is located in the pixel region, a sealant which is located in the encapsulation region, and a dummy metal which is interposed between the first substrate and the sealant, where the encapsulation region includes a first encapsulation region and a second encapsulation region which is adjacent to the first encapsulation region, and the dummy metal is located in the first encapsulation region.

Organic light emitting display

An organic light-emitting diode (OLED) display is disclosed. In one aspect, the display includes a stretchable substrate, a thin film transistor (TFT) formed over the stretchable substrate and including a plurality of electrodes, an OLED electrically connected to the TFT and including a plurality of electrodes, and a plurality of interconnection lines connected to the electrodes of the OLED and the TFT. At least one of the interconnection lines is configured to move in a stretching direction and rotate an electrode selected from the electrodes of the OLED and the TFT connected to the at least one interconnection line.

Organic light-emitting diode display

An organic light emitting display capable of displaying an image with uniform luminance regardless of deterioration of an organic light emitting diode and threshold voltage and/or mobility of a drive transistor is disclosed. The organic light emitting display senses deterioration of the organic light emitting diode and threshold voltage and/or mobility of a drive transistor and modifies the data supplied to the pixel according to the sensed parameters.

Organic light emitting display and driving method thereof

In a display apparatus and a driving method thereof, a detector determines whether a timing controller is operated in a three-dimensional (3D) mode or a two-dimensional (2D) mode to output a first or second mode signal according to a result of the determination. A compensator compensates for a gamma value of a 3D image to be increased in response to a first mode signal when the 2D mode is converted to the 3D mode and decreases an increased gamma value to a gamma value for a 2D image in response to a second mode signal when the 3D mode is converted to the 2D mode.

Display apparatus and method of driving the same

— Amorphous-oxide thin-film-transistor (TFT) arrays have been developed as TFT backplanes for large-sized active-matrix organic light-emitting-diode (AMOLED) displays. An amorphous-IGZO (indium gallium zinc oxide) bottom-gate TFT with an etch-stop layer (ESL) delivered excel lent electrical performance with a field-effect mobility of 21 cm2/V-sec, an on/off ratio of >108, and a subthreshold slope (SS) of 0.29 V/dec. Also, a new pixel circuit for AMOLED displays based on amorphous-oxide semiconductor TFTs is proposed. The circuit consists of four switching TFTs and one driving TFT. The circuit simulation results showed that the new pixel circuit has better performance than conventional threshold-voltage (VTH) compensation pixel circuits, especially in the negative state. A full-color 19-in. AMOLED display with the new pixel circuit was fabricated, and the pixel circuit operation was verified in a 19-in. AMOLED display. The AMOLED display with a-IGZO TFT array is promising for large-sized TV because a-IGZO TFTs can provide a large-sized backplane with excellent uniformity and device reliability.

Amorphous-oxide TFT backplane for large-sized AMOLED TVs

Amorphous oxide thin film transistor (TFT) arrays have been developed as TFT backplanes for large size active-matrix organic light emitting diode (AMOLED) displays. An amorphous IGZO (Indium Gallium Zinc Oxide) bottom gate TFT with an etch-stop layer (ESL) delivered excellent electrical performance with field- effect mobility of 21 cm2/V-s, an on/off ratio of >108, and subthreshold slope (SS) of 0.29V/dec. A full color 19-inch AMOLED display has been developed using the amorphous IGZO TFT backplane.

69.3: Amorphous Oxide TFT Backplane for Large Size AMOLED TVs

In a pixel circuit of an organic EL display device, a gate of a driving transistor is coupled to a gate of a compensating transistor, which is configured to operate as a diode. A precharge voltage is applied to the gate of the driving transistor while a selection signal is applied to a previous scan line, so that the compensating transistor is biased in a forward direction to apply a data voltage on the gate of the drive transistor. The driving transistor may be electrically isolated from the organic EL element (OLED) while precharging, so as to prevent the OLED from emitting a light using the precharge voltage. In addition, the driving transistor may be electrically isolated from the OLED while the data voltage is being charged, so as to prevent the OLED from emitting a light.

Image display device, and display panel and driving method thereof, and pixel circuit

A double gate thin-film transistor (TFT), and an organic light-emitting diode (OLED) display apparatus including the double gate TFT, includes a double gate thin-film transistor (TFT) including: a first gate electrode on a substrate; an active layer on the first gate electrode; source and drain electrodes on the active layer; a planarization layer on the substrate and the source and drain electrodes, and having an opening corresponding to the active layer; and a second gate electrode in the opening.

Double gate thin-film transistor and OLED display apparatus including the same

A pixel circuit and an organic light emitting diode (OLED) display device using the same are provided. The pixel circuit compensates for a threshold voltage of a driver transistor and for a voltage drop, and separately drives an initialization time to improve a contrast ratio. The pixel circuit further suppresses a leakage current caused by a data voltage using a fixed power source so that current variation caused by the leakage current can be reduced or minimized to improve crosstalk, and the duty of an emission control signal can be adjusted to remove motion blur. The pixel circuit also compensates for a leakage current generated in a turn-off state of a transistor with an increase in a drain-source voltage.

Yong-Sung Park

Papers

Amorphous-oxide TFT backplane for large-sized AMOLED TVs

69.3: Amorphous Oxide TFT Backplane for Large Size AMOLED TVs

Image display device, and display panel and driving method thereof, and pixel circuit

Double gate thin-film transistor and OLED display apparatus including the same

Pixel circuit and organic light emitting diode display device using the same