J
Jong Han Jeong
Researcher at Samsung
Publications - 19
Citations - 3614
Jong Han Jeong is an academic researcher from Samsung. The author has contributed to research in topics: Thin-film transistor & Amorphous solid. The author has an hindex of 14, co-authored 16 publications receiving 3458 citations.
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Journal ArticleDOI
3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array
Jae Kyeong Jeong,Jong Han Jeong,Jong Hyun Choi,Jang Soon Im,Sung Ho Kim,Hui Won Yang,Ki Nyeng Kang,Kwang Suk Kim,Tae Kyung Ahn,Hyun-Joong Chung,Min-Kyu Kim,Bon Seog Gu,Jin-Seong Park,Yeon-Gon Mo,Hye-Dong Kim,Ho Kyoon Chung +15 more
TL;DR: In this paper, a 121-inch WXGA active-matrix organic light emitting diode (AMOLED) display was demonstrated using indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) as an activematrix back plane.
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Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
TL;DR: In this paper, the impact of the passivation layer on the stability of indium-gallium-zinc oxide (IGZO) thin film transistors was investigated, and the authors attributed the Vth instability to the interaction between the exposed IGZO backsurface and oxygen and/or water in the ambient atmosphere during the gate voltage stress.
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High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper
Min-Kyu Kim,Jong Han Jeong,Hun Jung Lee,Tae Kyung Ahn,Hyun Soo Shin,Jin-Seong Park,Jae Kyeong Jeong,Yeon-Gon Mo,Hye-Dong Kim +8 more
TL;DR: In this article, thin film transistors (TFTs) were fabricated using an amorphous indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for which the channel length and width are patterned by photolithography and dry etching.
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High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel
TL;DR: In this article, the effect of indium content on the device performance of the a-IGZO TFTs was investigated, and the authors reported the fabrication of high performance thin film transistors (TFTs) with an amorphous indium gallium zinc oxide channel, which was deposited by cosputtering using a dual IGZO and indium zinc zinc oxide (IZO) target.
Journal ArticleDOI
Origin of Subthreshold Swing Improvement in Amorphous Indium Gallium Zinc Oxide Transistors
Jong Han Jeong,Hui Won Yang,Jin-Seong Park,Jae Kyeong Jeong,Yeon-Gon Mo,Hye-Dong Kim,Jaewon Song,Cheol Seong Hwang +7 more
TL;DR: In this article, the effect of the channel deposition pressure on the device performance of amorphous indium-gallium-zinc oxide (a-IGZO) transistors was investigated in detail.