The phase-shifting mask consists of a normal transmission mask that has been coated with a transparent layer patterned to ensure that the optical phases of nearest apertures are opposite. Destructive interference between waves from adjacent apertures cancels some diffraction effects and increases the spatial resolution with which such patterns can be projected. A simple theory predicts a near doubling of resolution for illumination with partial incoherence σ < 0.3, and substantial improvements in resolution for σ < 0.7. Initial results obtained with a phase-shifting mask patterned with typical device structures by electron-beam lithography and exposed using a Mann 4800 10× tool reveals a 40-percent increase in usuable resolution with some structures printed at a resolution of 1000 lines/mm. Phase-shifting mask structures can be used to facilitate proximity printing with larger gaps between mask and wafer. Theory indicates that the increase in resolution is accompanied by a minimal decrease in depth of focus. Thus the phase-shifting mask may be the most desirable device for enhancing optical lithography resolution in the VLSI/VHSIC era.

Improving resolution in photolithography with a phase-shifting mask

A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.

Method of depositing an amorphous carbon layer

Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas into the processing chamber, wherein the processing gas comprises a carrier gas, hydrogen, and one or more precursor compounds, generating a plasma of the processing gas by applying power from a dual-frequency RF source, and depositing an amorphous carbon layer on the substrate.

Liquid precursors for the CVD deposition of amorphous carbon films

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.

Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme

A method of forming a photoresist pattern having a uniformly fine line width, and a method of manufacturing a semiconductor device using such a photoresist pattern as a mask, include the step of forming an anti-reflective coating (ARC) using only a hydrocarbon based gas. A highly reflective layer is formed on a semiconductor substrate on which an underlayer is disposed. Using only a hydrocarbon based gas, the ARC is formed on the highly reflective layer. A photoresist layer is formed on the ARC, and is exposed and developed to form a photoresist pattern on the ARC. The ARC and the highly reflective layer under the photoresist pattern are etched using the photoresist pattern as a mask. Thereafter, the photoresist pattern and the ARC are simultaneously removed. The ARC is of an amorphous silicon film having high etching selectivity and being easily removed along with the photoresist pattern.

Method of forming a photoresist pattern on a semiconductor substrate using an anti-reflective coating deposited using only a hydrocarbon based gas

A semiconductor device having a double layer type anti-reflective layer, which can reduce reflectivity in a photolithography process using, for example, an exposure light source of a 193 nm wavelength region and which can suppress intermixing at the boundary between an anti-reflective layer and a photoresist layer, and a fabrication method of the semiconductor device are disclosed. The semiconductor device includes an underlying layer having a high reflectivity formed on a semiconductor substrate, a double layer type anti-reflective layer formed of a nitride layer and a layer formed using only hydrocarbon-based gas on the underlying layer, and a photoresist layer formed on the double layer type anti-reflective layer. In the double layer type anti-reflective layer, the nitride layer and the layer formed using only hydrocarbon-based gas can be sequentially stacked. Also, it is possible that the layer formed using only hydrocarbon-based gas and the nitride layer are sequentially stacked.

Method of fabrication of a semiconductor device having a double layer type anti-reflective layer

An anti-reflective composition used in manufacturing integrated circuit devices comprises a silicon-added germanium nitride material. The composition is present in a solid solution.

(Ge,Si) Nx anti-reflective compositions and integrated circuit devices comprising the same

A method for providing a broadcast program and a broadcast receiving apparatus using the same are provided. The method for providing a broadcast program includes providing an electronic program guide (EPG); and receiving and providing an internet protocol (IP) TV broadcast program corresponding to a general TV broadcast program which is selected by a user using the EPG. Accordingly, a user searches for and selects a desired IP TV broadcast program more conveniently.

Method for providing broadcast program and broadcast receiving apparatus using the same

Chromium aluminum oxide was chosen as a new candidate for use as an attenuated phase-shifting mask (Att-PSM) material. The compositions of films were correlated with optical properties. With the measured and the fitted data, we simulated the transmittance and the phase shift using the matrix method. Consequently, we acquired optimum parameters for Att-PSM's, such as Al/Cr = 1.9-2.5 and d = 120 nm at a 193-nm wavelength, Al/Cr = 1.0-1.7 and d = 128 nm at a 248-nm wavelength, and Al/Cr = 0-0.1 and d = 170 nm at a 365-nm wavelength. This simulation was verified by transmittance measurement.

Yongbeom Kim

Papers

Method of forming a photoresist pattern on a semiconductor substrate using an anti-reflective coating deposited using only a hydrocarbon based gas

Method of fabrication of a semiconductor device having a double layer type anti-reflective layer

(Ge,Si) Nx anti-reflective compositions and integrated circuit devices comprising the same

Method for providing broadcast program and broadcast receiving apparatus using the same

Attenuated Phase-Shifting Masks of Chromium Aluminum Oxide