An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A lighting device comprising first and second groups of solid state light emitters, which emit light having peak wavelength in ranges of from 430 nm to 480 nm, and first and second groups of lumiphors which emit light having dominant wavelength in the range of from 555 nm to 585 nm. In some embodiments, if current is supplied to a power line, a combination of (1) light exiting the lighting device which was emitted by the first group of emitters, and (2) light exiting the lighting device which was emitted by the first group of lumiphors would have a correlated color temperature which differs by at least 50 K from a correlated color temperature which would be emitted by a combination of (3) light exiting the lighting device which was emitted by the second group of emitters, and (4) light exiting the lighting device which was emitted by the second group of lumiphors.

Lighting device and lighting method

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

Methods are provided herein for treating substrate surfaces in preparation for subsequent nucleation-sensitive depositions (e.g., polysilicon or poly-SiGe) and adsorption-driven deposition (e.g. atomic layer deposition or ALD). Prior to depositing, the surface is treated with non-depositing plasma products. The treated surface more readily nucleates polysilicon and poly-SiGe (such as for a gate electrode), or more readily adsorbs ALD reactants (such as for a gate dielectric). The surface treatment provides surface moieties more readily susceptible to a subsequent deposition reaction, or more readily susceptible to further surface treatment prior to deposition. By changing the surface termination of the substrate with a low temperature radical treatment, subsequent deposition is advantageously facilitated without depositing a layer of any appreciable thickness and without significantly affecting the bulk properties of the underlying material. Preferably less than 10 Å of the bulk material incorporates the excited species, which can include fluorine, chlorine and particularly nitrogen excited species.

Surface preparation prior to deposition

A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron-containing compound and one refractory metal compound onto a substrate. In an alternate embodiment, the boride layer has a composite structure. The composite boride layer structure comprises two or more refractory metals. The composite boride layer is formed by sequentially chemisorbing monolayers of a boron compound and two or more refractory metal compounds on a substrate.

Formation of boride barrier layers using chemisorption techniques

A multilayer dielectric stack is provided which has alternating layers of a high-k material and an interposing material. The presence of the interposing material and the thinness of the high-k material layers reduces or eliminate effects of crystallization within the high-k material, even at relatively high annealing temperatures. The high-k dielectric layers are a metal oxide of preferably zirconium or hafnium. The interposing layers are preferably amorphous aluminum oxide, aluminum nitride, or silicon nitride. Because the layers reduce the effects of crystalline structures within individual layers, the overall tunneling current is reduced. Also provided are atomic layer deposition, sputtering, and evaporation as methods of depositing desired materials for forming the above-mentioned multilayer dielectric stack.

Method of forming a multilayer dielectric stack

A high-k dielectric films is provided, which is doped with divalent or trivalent metals to vary the electron affinity, and consequently the electron and hole barrier height. The high-k dielectric film is a metal oxide of either zirconium (Zr) or hafnium (Hf), doped with a divalent metal, such as calcium (Ca) or strontium (Sr), or a trivalent metal, such as aluminum (Al), scandium (Sc), lanthanum (La), or yttrium (Y). By selecting either a divalent or trivalent doping metal, the electron affinity of the dielectric material can be controlled, while also providing a higher dielectric constant material then silicon dioxide. Preferably, the dielectric material will also be amorphous to reduce leakage caused by grain boundaries. Also provided are sputtering, CVD, Atomic Layer CVD, and evaporation deposition methods for the above-mentioned, doped high dielectric films.

Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same

Multilayer dielectric stack and method

A method for selective ALD of ZnO on a wafer preparing a silicon wafer; patterning the silicon wafer with a blocking agent in selected regions where deposition of ZnO is to be inhibited, wherein the blocking agent is taken from a group of blocking agents includes isopropyl alcohol, acetone and deionized water; depositing a layer of ZnO on the wafer by ALD using diethyl zinc and H 2 O at a temperature of between about 140° C. to 170° C.; and removing the blocking agent from the wafer.

Method to perform selective atomic layer deposition of zinc oxide

A high-k dielectric film is provided which remains amorphous at relatively high annealing temperatures. The high-k dielectric film is a metal oxide of either Zr or Hf, doped with a trivalent metal, such as Al. Because the film resists the formation of a crystalline structure, interfaces to adjacent films have fewer irregularities. When used as a gate dielectric, the film can be made thin to support smaller transistor geometries, while the surface of the channel region can be made smooth to support high electron mobility. Also provided are CVD, sputtering, and evaporation deposition methods for the above-mentioned, trivalent metal doped high dielectric films.

Yoshi Ono

Papers

Method of forming a multilayer dielectric stack

Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same

Multilayer dielectric stack and method

Method to perform selective atomic layer deposition of zinc oxide

Aluminum-doped zirconium dielectric film transistor structure and deposition method for same