An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.

Semiconductor device, electronic device, and method of manufacturing semiconductor device

To prevent a point defect and a line defect in forming a light-emitting device, thereby improving the yield. A light-emitting element and a driver circuit of the light-emitting element, which are provided over different substrates, are electrically connected. That is, a light-emitting element and a driver circuit of the light-emitting element are formed over different substrates first, and then electrically connected. By providing a light-emitting element and a driver circuit of the light-emitting element over different substrates, the step of forming the light-emitting element and the step of forming the driver circuit of the light-emitting element can be performed separately. Therefore, degrees of freedom of each step can be increased, and the process can be flexibly changed. Further, steps (irregularities) on the surface for forming the light-emitting element can be reduced than in the conventional technique.

Light-emitting device and manufacturing method thereof

A gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate through a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ions which exist in the substrate. Also, a halogen is added to either or both of the blocking layer and a gate insulator of the transistor in order that impurities such as alkaline ions, dangling bonds and the like can be neutralized, therefore, the reliability of the device is improved.

Thin-film transistor

A semiconductor device having excellent crystallinity and excellent electric characteristics includes a ZnO thin film having excellent surface smoothness. ZnO-based thin films (an n-type contact layer, an n-type clad layer, an active layer, a p-type clad layer, and a p-type contact layer) primarily including ZnO are formed sequentially by an ECR sputtering method or other suitable method on a zinc-polar surface of a ZnO substrate. A transparent electrode and a p-side electrode are formed by an evaporation method or other suitable method on a surface of the p-type contact layer, and an n-side electrode is formed on an oxygen-polar surface of the ZnO substrate.

Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device

In this paper, we describe a new type of magnetic surface acoustic wave (SAW) sensor that consists of interdigital transducers made of a magnetostrictive material, Ni, on a quartz substrate. This sensor can be used as an element of a resonator-type wireless SAW sensor system because it has a high Q. Moreover, it has the merits of being fabricated easily using the existing process for SAW devices because its structure is the same as that of general SAW resonators. When an external magnetic field of about 100 mT was applied perpendicularly to the direction of SAW propagation, the frequency change obtained was 200 ppm. In addition, the developed sensor was applied in a passive and wireless open/close sensing system and the reading distance obtained was 3 m.

https://iopscience.iop.org/article/10.1143/JJAP.50.07HD07/pdf

Magnetic Sensor Based on Surface Acoustic Wave Resonators

PROBLEM TO BE SOLVED: To provide a wireless thermometer capable of measuring body temperature more accurately and certainly than a conventional one.SOLUTION: A flexible base plate 101 has a structure formed with a quadrangular first part and a long second part integrally. The first part of the flexible base plate 101 is formed with a winding coil electrode 102, which functions as an antenna part 12. An end of the second part of the flexible base plate 101 on the side opposite to the side with the first part is mounted with a quartz oscillator 110, which functions as a temperature measurement part 11. The quartz oscillator 101 and the coil electrode 102 are connected by a wiring electrode 103 on the second part, which functions as a wiring part 13. When a pulse signal SpL is applied to the quartz oscillator 110 of the temperature measurement part 11 through the antenna part 12, a frequency according to an ambient temperature resonates and a resonance signal Sfp is output from the quartz oscillator 101. The resonance signal Sfp is transmitted externally through the antenna part 12.

Wireless thermometer and wireless body temperature measurement system

Ein SH-Typ-Endoberflachenreflexionstypoberflachenwellenbauelement, bei dem die geeignetste Position von Endoberflachen des piezoelektrischen Substrats bestimmt ist, und ein piezoelektrisches Substrat verwendet wird, ist vorgesehen. Interdigitalwandler sind auf der Hauptoberflache des piezoelektrischen Substrats gebildet, das eine vergleichsweise niedrige dielektrische Konstante epsilon¶11¶·T· aufweist (beispielslweise eine relative dielektrische Konstante von 40 oder weniger). Die Positionen der Endoberflachen sind bestimmt, so das der Abstand von der Mitte des zweiten Elektrodenfingers, gezahlt von der ausersten Seite in der Oberflachenwellenausbreitungsrichtung, zwischen den Interdigitalwandlern zu den Endoberflachen (Endoberflachen zum Reflektieren der Oberflachenwelle) des piezoelektrischen Substrats (N + 5/8) lambdas L (N + 7/8) lambdas erfullt, wobei lambdas die Wellenlange der Oberflachenwelle ist und N 0 oder eine positive Ganzzahl ist.

Surface acoustic wave device and communication device

We have realized the fabrication of a film bulk acoustic wave resonator (FBAR) using a thin LiNbO3 film deposited by chemical vapor deposition (CVD) for the first time. As a result, a 2.9 GHz FBAR with an impedance ratio of 40 dB at resonant ( fr) and antiresonant ( fa) frequencies was realized. The LiNbO3 film has a mixed polarity. As a result of scanning nonlinear dielectric microscopy (SNDM), -c domains and +c domains occupy 82 and 18% of the LiNbO3 film, respectively. A shear mode was not excited on the fabricated FABR. According to a calculation, it is found that the shear wave mode can be suppressed by selecting the thickness of electrodes without any changes in the main responses of the longitudinal mode wave. It is important to deposit another oriented LiNbO3 film with a larger coupling factor to realize a wider-band device.

https://iopscience.iop.org/article/10.1143/JJAP.50.07HD10/pdf

Yoshihiro Ito

Papers

Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device

Magnetic Sensor Based on Surface Acoustic Wave Resonators

Wireless thermometer and wireless body temperature measurement system

Surface acoustic wave device and communication device

Properties of LiNbO3Thin Film Deposited by Chemical Vapor Deposition and Frequency Characteristics of Film Bulk Acoustic Wave Resonator