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Yoshihiro Watanabe

Researcher at Tokyo Institute of Technology

Publications -  120
Citations -  1203

Yoshihiro Watanabe is an academic researcher from Tokyo Institute of Technology. The author has contributed to research in topics: Projector & Projection mapping. The author has an hindex of 14, co-authored 117 publications receiving 915 citations. Previous affiliations of Yoshihiro Watanabe include University of Tokyo.

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Journal ArticleDOI

Dynamic Projection Mapping onto Deforming Non-Rigid Surface Using Deformable Dot Cluster Marker

TL;DR: The Deformable Dot Cluster Marker (DDCM) is proposed, a novel fiducial marker for high-speed tracking of non-rigid surfaces using a high-frame-rate camera that realizes robust tracking even in the presence of external and self occlusions and allows millisecond-order computational speed.
Proceedings ArticleDOI

955-fps Real-time Shape Measurement of a Moving/Deforming Object using High-speed Vision for Numerous-point Analysis

TL;DR: The proposed measurement system can observe a moving/deforming object at high frame rate and can acquire data in real-time by using two-dimensional pattern projection and a high-speed vision system with a massively parallel co-processor for numerous-point analysis.
Proceedings ArticleDOI

4.9 A 1ms high-speed vision chip with 3D-stacked 140GOPS column-parallel PEs for spatio-temporal image processing

TL;DR: High-speed vision systems that combine high-frame-rate imaging and highly parallel signal processing enable instantaneous visual feedback to rapidly control machines over human-visual-recognition speeds and enable a reduction in circuit scale by using a fast and simple algorithm optimized for high- frame-rate processing.
Proceedings ArticleDOI

The deformable workspace: A membrane between real and virtual space

TL;DR: The concept of the deformable tangible workspace is introduced, and the required technologies for implementing it are described, and several applications developed on a prototype system are detailed and demonstrated.
Proceedings ArticleDOI

Design and demonstration of very high-k (k∼50) HfO 2 for ultra-scaled Si CMOS

TL;DR: In this article, a very high-k (k~50) HfO2 films for ultra-scaled CMOS application were demonstrated, and a feasible method to obtain sub-nm EOT with very highk HFO2 under actual process conditions, together with an underlying mechanism was presented.