Showing papers by "Yoshiyasu Ueno published in 1992"
NEC1
TL;DR: In this article, high-power strained multiquantum-well (MQW) AlGaInP visible laser diodes (LDs) have been developed for stable 30 mW operation at 50°C for more than 1000h.
Abstract: High-power strained multiquantum-well (MQW) AlGaInP visible laser diodes (LDs) have been developed. Marked improvements in threshold current density and characteristic temperature have been demonstrated. Very stable 30 mW operation at 50°C for more than 1000h has been achieved for transverse-mode stabilised +0.30% lattice-mismatched MQW LDs. The operating current increase rates are less than 10−4 h−1.
14 citations
Patent•
25 Sep 1992
TL;DR: In this paper, the authors proposed to enhance high output operation characteristics of semiconductor laser diode by making an active layer sufficiently thin thereby enhancing controllability of impurity diffusion step.
Abstract: PURPOSE:To enhance high output operation characteristics of semiconductor laser diode by making an active layer sufficiently thin thereby enhancing controllability of impurity diffusion step. CONSTITUTION:The semiconductor laser diode comprises a multilayer epitaxial layer 2 including at least n-AlGaAsInP clad layer 9, an active layer 11 of GaInP or AlGaInP, and a P-AlGaInP clad layer 13 formed sequentially on an n-GaAs substrate 7, and a pair of laser edges 6. The active layer 11 or the P-AlGaInP clad layer 13 is formed sufficiently thin and the active layer 11 in the pumping region 3 of the laser is composed of AlGaInP in ordered state whereas the active layer 11 in the window region 4 in the vicinity of the laser edge 6 is composed of AlGaInP in disorded State. The active layer 11 is a multiple quantum well layer of 50nm thick or less. Alternatively, a GaInP well layer in disordered state may be employed. Furthermore, the P-AlGaInP clad layer 13 is set at 0.75mum thick or less.
1 citations
Journal Article•
NEC1
TL;DR: In this article, a high-power 690-nm AlGaInP laser for use in a high density rewritable-optical-disk memory system is presented, where the deterioration of its temperature characteristics, which results from the high power-oriented laser structure, is improved by using compressively strained GaInP quantum wells as the active layer.
Abstract: A high-power 690-nm AlGaInP laser for use in a high-density rewritable-optical-disk memory system is presented. The deterioration of its temperature characteristics, which results from the high-power-oriented laser structure, is improved by using compressively strained GaInP quantum wells as the active layer. Output power of 40 mW is achieved up to 80 degrees C. Stable fundamental-transverse-mode operation is obtained up to 50 mW. Output-power-induced facet degradation is suppressed by an Al/sub 2/O/sub 3/ facet coating. The lasers operate stably at 30 mW at 50 degrees C for over 2600 h. The mean extrapolated lifetime is 10000 h. >
1 citations