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Yosuke Inomata
Researcher at Kyocera
Publications - 40
Citations - 561
Yosuke Inomata is an academic researcher from Kyocera. The author has contributed to research in topics: Electrode & Reactive-ion etching. The author has an hindex of 11, co-authored 40 publications receiving 554 citations.
Papers
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Journal ArticleDOI
Surface texturing of large area multicrystalline silicon solar cells using reactive ion etching method
TL;DR: In this paper, a reactive ion etching method has been applied to form a surface texture of multicrystalline silicon solar cells in order to reduce the surface reflectance, which has a pyramid-like shape, and aspect ratio of which can be easily controlled by the gas flow ratio.
Patent
Solar Cell Module and Photovoltaic Power Generator Using This
Shuichi Fujii,Yosuke Inomata,Tomonari Sakamoto,Koichiro Niira,Yuko Fukawa,Hiroshi Morita,Koji Nishi,Tatsuya Yashiki,Yamashita Mitsuo,Kenji Fukui +9 more
TL;DR: In this paper, the bus bar electrodes are used to retrieve light-produced current produced at the solar cell element to the outside and collecting finger electrodes connected to these bus bars, and the finger electrodes (5b) are 0.5 mm through 2 mm in width and the bus-bar electrodes were 0.05 mm through 0.1 millimeter in width.
Patent
Multicrystalline silicon substrate and process for roughening surface thereof
TL;DR: In this paper, a surface of a multicrystalline silicon substrate is etched with an alkaline aqueous solution in a condition so that a surface area-to-planar surface area ratio R is smaller than 1.1.
Proceedings ArticleDOI
Surface texturing using reactive ion etching for multicrystalline silicon solar cells
TL;DR: In this paper, a new surface texturing technique using a reactive ion etching (RIE) method for multicrystalline silicon (mc-Si) solar cells was developed, which is expected to form a low reflectance surface on grains of various crystalline orientations.
Patent
Manufacture of solar cell element
TL;DR: In this article, the shape of the uneven part is optimized by introducing gas for flattening a shape simultaneously or continuously after the very small uneven part 1b is formed, and a mask and etching gas are simultaneously introduced in the dry etching apparatus.