Showing papers by "You Seung Rim published in 2012"

Simultaneous modification of pyrolysis and densification for low-temperature solution-processed flexible oxide thin-film transistors

Abstract: High-pressure annealing (HPA) affected the thermodynamics of the formation of a solution-processed oxide film through the simultaneous modification of thermal decomposition and compression, and enabled the use of lower annealing temperatures, which was favourable for device implementation. HPA also reduced the film thickness and decreased the porosity, resulting in enhanced device characteristics at low temperature. Surface and depth profile characterization using X-ray reflectivity (XRR), X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectrometry (TOF-SIMS), and ellipsometry suggested that the HPA process supported the effective decomposition of commercial metal-nitrate and/or -salt precursors and strong bonding between oxygen and the metal ions, ultimately reducing the amount of organic residue. The as-optimized HPA process allowed for high-performance solution-processed flexible InZnO (IZO) TFTs on a polymeric substrate at 220 °C with low sub-threshold voltage swing (as low as 0.56 V dec−1), high on–off ratio of over 106, and field-effect mobility as high as 1.78 cm2 V−1 s−1, respectively. These results demonstrate that this is a simple and efficient promising approach for improving the performance of solution-processed electronic devices at low temperatures.

Improved Electrical Performance of an Oxide Thin-Film Transistor Having Multistacked Active Layers Using a Solution Process

Abstract: Thin-film transistors (TFTs) with multistacked active layers (MSALs) have been studied to improve their electrical performance. The performance enhancement with MSALs has been attributed to higher film density in the effective channel; the density was higher because the porosities of the sublayers were reduced by filling with solution. The proposed TFT with MSALs exhibited an enhanced field-effect mobility of 2.17 cm2/(V s) and a threshold voltage shift under positive bias stress of 8.2 V, compared to 1.21 cm2/(V s) and 18.1 V, respectively, for the single active layer TFT.

The Effects of Dual-Active-Layer Modulation on a Low-Temperature Solution-Processed Oxide Thin-Film Transistor

Abstract: We applied dual-active-layer (DAL) modulation to solution-processed AlInZnO (AIZO)/InZnO (IZO) DAL thin-film transistors (TFTs) to realize high performance at 350°C. The electrical characteristics of the DAL TFTs were affected by the In-versus-Zn ratio of each channel and the thickness of the IZO. This caused a difference in the carrier concentrations of the two channels and also changed the energy barrier height at the junction between the channels. A DAL TFT with optimized carrier concentration and energy barrier height yielded a competitive field-effect mobility of 5.62 cm2/V · s, a high ON/OFF ratio of 9.0 × 106, and a steep subthreshold swing of 0.53 V/dec.

Oxide semiconductor composition and preparation method thereof, method of forming oxide semiconductor thin film, method of fabricating electronic device and electronic device fabricated thereby

Abstract: Provided are an oxide semiconductor composition, a preparation method thereof, an oxide semiconductor thin film using the composition, and a method of forming an electronic device. The oxide semiconductor composition includes a photosensitive material and an oxide semiconductor precursor.

Compositions used in formation of oxide material layers, methods of forming an oxide material layer using the same, and methods of fabricating a thin film transistor using same

Abstract: Methods of forming an oxide material layer are provided. The method includes mixing a precursor material with a peroxide material to form a precursor solution, coating the precursor solution on a substrate, and baking the coated precursor solution.

Composition for an oxide thin film, a preparation method of the composition, a method for forming an oxide thin film using the composition, an electronic device including the oxide thin film, and a semiconductor device including the oxide thin film

Abstract: Provided are a composition for an oxide thin film, a preparation method of the composition, a method for forming an oxide thin film using the composition, an electronic device including the oxide thin film, and a semiconductor device including the oxide thin film. The composition for the oxide thin film includes a metal precursor and nitric acid-based stabilizer. The metal precursor includes at least one of a metal nitrate, a metal nitride, and hydrates thereof.

Composition for manufacturing oxide semiconductor and method for manufacturing thin-film transistor substrate using the same

Abstract: According to a method of manufacturing a thin film transistor substrate, a composition including a metal oxalate and a solvent for manufacturing an oxide semiconductor is coated to form a thin film, the thin film is annealed, and the thin film is patterned to form a semiconductor pattern.

P‐17: Performance Enhancement of Solution‐Processed Zn‐Sn‐O TFTs Using High‐Pressure Annealing

Abstract: In this paper, we investigated the effects of high-pressure annealing (HPA) in solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs). The O2-HPA-treated ZTO TFTs showed higher electrical performances in aspect of an on-current (Ion), saturation mobility (μsat) and bias stability. The O2-HPA treatment could contribute to the elimination of defect states that originated from the oxygen vacancies in solution-processed metal-oxide films. The 350°C O2-HPA-treated ZTO TFT showed μsat, threshold voltage (Vth), subthreshold slope (S.S) and on/off ratio of 2.35 cm2/V·s, 4.36 V, 0.58 V/dec., and 1.16times107, respectively.

Analysis on the Property Modification in Solution-processed SnZnO Through Composition Ratio Controlling

Abstract: In this paper, the properties of SnZnO films obtained from solution process with different component fractions were compared. The thermal behavior of the SnZnO solutions showed only a slight change according to the component fraction change. However, the definite changes were revealed at the structural properties of the SnZnO films. With diverse analyses, the origin of the changes was proved to the influence of phase change from to ZnO in SnZnO lattice. With the -phase-dominant SnZnO, the highest field effect mobility and on/off ratio of about 8.6 and were achieved, respectively.