Showing papers by "Youdou Zheng published in 1992"
TL;DR: In this paper, the authors investigated the subband structures in SiGe/Si quantum wells using RRH/VLP-CVD and observed the absorption peaks due to transitions between the hole subbands and the conduction band.
4 citations
TL;DR: In this article, a new kind of ordered structure in the GeSi sublayer of GeSi/Si superlattice was reported, where the atoms in the ordered structure were aligned as Ge•Si•Ge•Si and Ge •Si−Si•Si along the (111) axis.
Abstract: We report a new kind of ordered structure in the GeSi sublayer of GeSi/Si superlattice. X‐ray diffraction of GeSi/Si superlattice exhibits extraordinary peaks of 1/2(111), 3/2(111), (222) on (111) sample, and (200) on (100) sample. This shows that the germanium and silicon atoms in the GeSi sublayer are ordered due to the strain rather than randomly distributed in bulk GeSi alloy. Two coexisting models of order have been suggested for the (111) sample. The atoms in the ordered structure are aligned as Ge‐Si‐Ge‐Si and Ge‐Si‐Si‐Si along the (111) axis. The relative ratio of the two models has been calculated for the experimental result. The ordered structure may have significant effect on the band structure and optical properties.
2 citations