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Yukio H. Ogata

Researcher at Kyoto University

Publications -  180
Citations -  5438

Yukio H. Ogata is an academic researcher from Kyoto University. The author has contributed to research in topics: Porous silicon & Silicon. The author has an hindex of 39, co-authored 180 publications receiving 5156 citations.

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Determination of parameters of electron transport in dye-sensitized solar cells using electrochemical impedance spectroscopy.

TL;DR: Reliable values of the parameters relating to electron transport in dye-sensitized solar cells can be determined from measured spectra by electrochemical impedance spectroscopy when careful analysis of the measuredSpectra is done based on the classification and clarification of the same impedance equation consequent from the two models.
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Laser ablation at solid-liquid interfaces: An approach from optical emission spectra

TL;DR: In this article, the emission spectra from the solid-liquid interface irradiated by a pulsed laser were studied, and the results showed strong continuous spectrum immediately after a pulse shot, whereas after ≈100 ns later from the irradiation it was greatly reduced, and instead, the emission from small molecules dominated the spectra.
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Oxidation of Porous Silicon under Water Vapor Environment

TL;DR: In this article, the fine structure of the absorption bands were clarified with help of vibrational analysis by ab initio molecular orbital calculations, and absorption bands at 2150-2300 cm−1 were assigned to the Si-H vibrations due to,, and in order of increasing frequency, respectively.
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Electrolytic ammonia synthesis from water and nitrogen gas in molten salt under atmospheric pressure

TL;DR: In this article, the authors proposed a novel ammonia synthesis method from water vapor and nitrogen gas under atmospheric pressure at lower temperature than the Haber-Bosch process, where water vapor reacts with nitride ions (N3−) to form ammonia and oxide ions in molten salts.
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Direct electrolytic reduction of solid SiO2 in molten CaCl2 for the production of solar grade silicon

TL;DR: In this paper, the top end of an SiO 2 glass plate was put between two single crystal silicon plates and they were wound by a molybdenum wire, and the purity of the silicon ingot was 99.80% at this stage, due to the metal contamination from the stainless vessel.