Interpretation of X-ray Powder Diffraction Patterns . By H. Lipson and H. Steeple. Pp. viii + 335 + 3 plates. (Mac-millan: London; St Martins Press: New York, May 1970.) £4.

X-Ray Diffraction

Processes of severe plastic deformation (SPD) are defined as metal forming processes in which a very large plastic strain is imposed on a bulk process in order to make an ultra-fine grained metal The objective of the SPD processes for creating ultra-fine grained metal is to produce lightweight parts by using high strength metal for the safety and reliability of micro-parts and for environmental harmony In this keynote paper, the fabrication process of equal channel angular pressing (ECAP), accumulative roll-bonding (ARB), high pressure torsion (HPT), and others are introduced, and the properties of metals processed by the SPD processes are shown Moreover, the combined processes developed recently are also explained Finally, the applications of the ultra-fine grained (UFG) metals are discussed

Severe Plastic Deformation (SPD) Processes for Metals

A topical review of numerical and experimental studies of supercontinuum generation in photonic crystal fiber is presented over the full range of experimentally reported parameters, from the femtosecond to the continuous-wave regime. Results from numerical simulations are used to discuss the temporal and spectral characteristics of the supercontinuum, and to interpret the physics of the underlying spectral broadening processes. Particular attention is given to the case of supercontinuum generation seeded by femtosecond pulses in the anomalous group velocity dispersion regime of photonic crystal fiber, where the processes of soliton fission, stimulated Raman scattering, and dispersive wave generation are reviewed in detail. The corresponding intensity and phase stability properties of the supercontinuum spectra generated under different conditions are also discussed.

Supercontinuum generation, photonic crystal fiber

Resonant waveguide gratings (RWGs), also known as guided mode resonant (GMR) gratings or waveguide-mode resonant gratings, are dielectric structures where these resonant diffractive elements benefit from lateral leaky guided modes from UV to microwave frequencies in many different configurations. A broad range of optical effects are obtained using RWGs such as waveguide coupling, filtering, focusing, field enhancement and nonlinear effects, magneto-optical Kerr effect, or electromagnetically induced transparency. Thanks to their high degree of optical tunability (wavelength, phase, polarization, intensity) and the variety of fabrication processes and materials available, RWGs have been implemented in a broad scope of applications in research and industry: refractive index and fluorescence biosensors, solar cells and photodetectors, signal processing, polarizers and wave plates, spectrometers, active tunable filters, mirrors for lasers and optical security features. The aim of this review is to discuss the latest developments in the field including numerical modeling, manufacturing, the physics, and applications of RWGs. Scientists and engineers interested in using RWGs for their application will also find links to the standard tools and references in modeling and fabrication according to their needs.

/pdf/recent-advances-in-resonant-waveguide-gratings-17dyntevmn.pdf

Recent Advances in Resonant Waveguide Gratings

Light emitting diodes, LEDs, historically have been used for indicators and produced low amounts of heat. The introduction of high brightness LEDs with white light and monochromatic colors have led to a movement towards general illumination. The increased electrical currents used to drive the LEDs have focused more attention on the thermal paths in the developments of LED power packaging. The luminous efficiency of LEDs is soon expected to reach over 80 lumens/W, this is approximately 6 times the efficiency of a conventional incandescent tungsten bulb. Thermal management for the solid-state lighting applications is a key design parameter for both package and system level. Package and system level thermal management is discussed in separate sections. Effect of chip packages on junction to board thermal resistance was compared for both SiC and Sapphire chips. The higher thermal conductivity of the SiC chip provided about 2 times better thermal performance than the latter, while the under-filled Sapphire chip package can only catch the SiC chip performance. Later, system level thermal management was studied based on established numerical models for a conceptual solid-state lighting system. A conceptual LED illumination system was chosen and CFD models were created to determine the availability and limitations of passive air-cooling.

Thermal management of LEDs: Package to system

Tapered silicon photonic crystals (PhCs) with smooth sidewalls are realized using a novel single-step deep reactive ion etching. The PhCs can significantly reduce the surface reflection over the wavelength range between the ultra-violet and near-infrared regions. From the measurements using a spectrophotometer and an angle-variable spectroscopic ellipsometer, the sub-wavelength periodic structure can provide a broad and angular-independent antireflective window in the visible region for the TE-polarized light. The PhCs with tapered rods can further reduce the reflection due to a gradually changed effective index. On the other hand, strong optical resonances for TM-mode can be found in this structure, which is mainly due to the existence of full photonic bandgaps inside the material. Such resonance can enhance the optical absorption inside the silicon PhCs due to its increased optical paths. With the help of both antireflective and absorption-enhanced characteristics in this structure, the PhCs can be used for various applications.

Deep and tapered silicon photonic crystals for achieving anti-reflection and enhanced absorption.

Silicon antireflection is realized with vertical-aligned SiNWs by using improved metal-induced etching technique. The spectral responses of the transmission, reflection, and absorption characteristics for the SiNWs of different lengths are investigated. In order to realize short SiNWs to provide sufficiently low reflection, a post chemical etching process is developed to make the nanowires have a larger length fluctuation and/or tapered structure. The use of short SiNWs can allow a faster process time and avoid the sub-bandgap absorption that frequently occurs in long nanowires. Short SiNWs can also provide more compatible material structure and fabrication procedures than long ones can for applying to make optoelectronic devices. Taking the applications to solar cells as examples, the SiNWs fabricated by the proposed technique can provide 92% of solar weighted absorption with about 720 nm long wires because of the resultant effective graded index and enhanced multiple optical scattering from the random SiNW lengths and tapered wires after KOH etching.

Antireflective silicon surface with vertical-aligned silicon nanowires realized by simple wet chemical etching processes

Demand for rapid and massive-scale exfoliation of bulky graphite remains high in graphene commercialization and property manipulation. We report a procedure utilizing “preformed acidic oxidizing medium (PAOM)” as a modified version of the Hummers’ method for fast and reliable synthesis of graphene oxide. Pre-mixing of KMnO4 and concentrated H2SO4 prior to the addition of graphite flakes enables the formation of effectively and efficiently oxidized graphene oxide (EEGO) featured by its high yields and suspension homogeneity. PAOM expedites diffusion of the Mn-oxidants into the graphite galleries, resulting in the rapid graphite oxidation, capable of oxidizing bulky graphite flakes (~0.8 mm in diameter) that can not be realized by the Hummers’ method. In the scale-up tests, ten-time amount of graphite can be completely exfoliated by PAOM without need of extended reaction time. The remarkable suspension homogeneity of EEGO can be exploited to deposit ultra-flat coating for wafer-scale nanopatterning. We successfully fabricated GO optical gratings with well-defined periodicity (300 nm) and uniform thickness (variation <7 nm). The combination of the facile and potent PAOM approach with the wafer-scale patterning technique may realize the goal for massive throughput graphene nanoelectronics.

/pdf/effective-synthesis-of-highly-oxidized-graphene-oxide-that-5d1vhz5jbh.pdf

Effective Synthesis of Highly Oxidized Graphene Oxide That Enables Wafer-scale Nanopatterning: Preformed Acidic Oxidizing Medium Approach.

A novel and simple approach is demonstrated for fabricating silicon nanowire arrays (SNWAs) with controllable sidewall profiles. A single-step deep-reactive-ion etching (SDRIE) is used to transfer the holography patterned photoresist template to silicon or silicon-on-insulator substrates. With the SDRIE etching process, scalloping of the sidewalls can be avoided while reserving the high-mask selectivity over resist and high-etching rate. The sidewall angle of resultant patterns can be adjusted by tuning the composition of the gas mixture of the process. A modified-SDRIE process with a linearly changed gas flow is further developed to extend its capability. A post-high-energy argon plasma treatment is used to create sharp tips on the top of SNWAs and to increase the filling factor. Broadband antireflective (AR) window with a low reflectivity can be realized from tall SNWAs with high-filling factor. Depositing silicon dioxide over SNWAs can further enhance the AR performance. The position and bandwidth of the AR window can be controlled by tuning the SNWA parameters.

Fabrication of Highly Ordered Silicon Nanowire Arrays With Controllable Sidewall Profiles for Achieving Low-Surface Reflection

https://www2.nsysu.edu.tw/MSE/papers/Paper%20in%20PDF/78%20ARB%20Scripta.pdf

Yung-Jr Hung

Papers

Deep and tapered silicon photonic crystals for achieving anti-reflection and enhanced absorption.

Antireflective silicon surface with vertical-aligned silicon nanowires realized by simple wet chemical etching processes

Effective Synthesis of Highly Oxidized Graphene Oxide That Enables Wafer-scale Nanopatterning: Preformed Acidic Oxidizing Medium Approach.

Fabrication of Highly Ordered Silicon Nanowire Arrays With Controllable Sidewall Profiles for Achieving Low-Surface Reflection

Transformation into nanocrystalline or amorphous materials in Zr–X binary systems using ARB route