We present the detailed characteristics of solid source molecular beam epitaxy (MBE) grown large format ( \(640\times 512\) ) extended short wavelength infrared In0.83Ga0.17As sensor with desirable performance at both pixel and focal plane array (FPA) levels. The FPA pixels in the mesa structure grown on a graded AlInAs buffer layer with 2.65- \(\mu \) m, 300-K cutoff wavelength exhibited 300- and 200-K peak detectivities as high as \(\sim \!\! 2.5\times 10^{10 }\) and \(\sim \!\!1\times 10^{12}\) cmHz \(^{1/2}\) /W, which are both equivalent to the theoretical limits set by the Johnson noise of the detector. Dark current analysis of the pixels displayed no considerable tunneling component with the dark current being dominated by generation-recombination and shunt leakage mechanisms >200 K up to a reverse bias voltage of 3 V. Moreover, the noise measurements displayed no 1/ \(f\) noise in the FPA pixels. In spite of the large lattice mismatch, the FPA yielded very good response linearity, as well as impressively good responsivity nonuniformity and pixel operability of 5.5% and 99.8%, respectively. The results showing the feasibility of both solid source MBE and graded AlInAs buffer for the growth of extended InGaAs photodetectors are very encouraging for the large format FPA implementation of these detectors with desirable imaging performance and an extended cutoff wavelength as high as \(\sim 2.7\) \(\mu \) m.

\(640\times 512\) Extended Short Wavelength Infrared In 0.83 Ga 0.17 As Focal Plane Array

The invention discloses a semiconductor device and a forming method thereof. The method comprises the following steps: providing a substrate, wherein a part of the substrate is provided with a gate structure film; forming a first side wall and a mask side wall, wherein two side walls of the gate structure film are covered with the first side wall respectively, the top surface of the first side wall is higher than the top surface of the gate structure film, the mask side wall is positioned on a part of the gate structure film, and the mask side wall is in contact with the first side wall higherthan the top surface of the gate structure film; using the first side wall and the mask side wall as masks to etch the gate structure film, and forming a gate structure with a first side and a secondside which are opposite, wherein the first side wall is positioned on the first side of the gate structure; forming second side walls on the first side and the second side of the gate structure respectively, wherein the second side wall on the first side of the gate structure is on the side wall surface of the first side wall, and the second side wall on the second side of the gate structure is on the side wall surface of the gate structure and the side wall surface of the mask side wall; and then correspondingly forming a drain region and a source region in the substrate on the first side and the second side of the gate structure respectively. According to the method, the process difficulty is reduced.

Semiconductor device and forming method thereof

https://iopscience.iop.org/article/10.1088/1674-1056/27/12/128102/pdf

Short-wave infrared InGaAs photodetectors and focal plane arrays*

We investigate surface passivation effects of SiNx films deposited by inductive coupled plasma chemical vapor deposition (ICPCVD) and plasma enhanced chemical vapor deposition (PECVD) technologies for InAlAs/InGaAs/InP photo-detectors. It is found that ICPCVD deposited SiNx film effectively reduces the densities of the interface states and slow traps near SiNx/InAlAs interface, which realize the small surface recombination velocity and low surface current for InAlAs/InGaAs/InP photo-detectors. By comparing C-V and XPS results, it is suggested that the trap density reduction by ICPCVD technology could be attributed to the disorder suppression on InAlAs surface due to the high density of SiNx film and less processing energy to the InAlAs surface.

Impact of SiNx passivation on the surface properties of InGaAs photo-detectors

The invention discloses a subwavelength plasmonic microcavity light coupling structure for promoting photoelectric detector response rate. The propagation direction and optical field distribution of incident light are modulated through a plasmonic microcavity, thus the incident light is limited to be propagate in the microcavity, the light escape is reduced, and the utilization rate of photons is raised. The incident light is focused in the microcavity such that the intensity is greatly enhanced, and a photoelectric detector with a high response rate can be formed through clamping photoelectric conversion material in the microcavity. The coupling structure is formed by a metal grating layer formed by upper layer periodic metal bars, a photoelectric conversion activation layer and a lower layer metal reflective layer. The subwavelength plasmonic microcavity light coupling structure has the advantages that by using the mode selection effect of an electromagnetic wave near field coupling microcavity formed by plasmonic resonance between the upper layer metal grating and the lower layer metal reflective layer, thus the photons in the microcavity are propagated along a transverse direction to form standing wave, the light field energy is gathered and the length of equivalent optical absorption is increased, and the response rate of the detector is greatly raised.

Subwavelength plasmonic microcavity light coupling structure for promoting photoelectric detector response

The invention discloses a monolithic integrated InGaAs line array or stacked array detector for a sub-wavelength micro-polarization grating. The detector is a photoelectric detector and consists of an InGaAs photosensitive chip, an anti-reflection film and the sub-wavelength micro-polarization grating, wherein the anti-reflection film is made of a low-refractive index SiO2 material, and the extinction ratio of the sub-wavelength micro-polarization grating is improved; the sub-wavelength micro-polarization grating is a polarization grating line array or array consisting of polarization units in different polarization orientations; and each polarization unit is a metal polarization grating of which the grating period is shorter than that of an incident light wavelength. The sub-wavelength micro-polarization grating is integrated on a chip of a near-infrared detector, and the invention has the main advantages that: (1) the polarization grating is monolithically integrated with the detector, an optical system is simplified, and motion parts of a polarization scanning system are eliminated; (2) high-accuracy angle quantification can be achieved, and an angle error is avoided; and (3) the polarization units in the different polarization orientations are imaged simultaneously, and accurate polarization information is acquired from a moving target.

Monolithic integrated InGaAs near-infrared detector for sub-wavelength micro-polarization grating

Inductively coupled plasma chemical vapor deposition silicon nitride for passivation of In0.83Ga0.17As photodiodes

The invention discloses a method for manufacturing a planar indium gallium arsenic infrared detector chip with an extended wavelength. According to a traditional PIN type indium gallium arsenic infrared detector, the quantum efficiency of the indium gallium arsenic infrared detector in the visible light band is limited due to absorption of an indium phosphide cap layer or absorption of a substrate. An indium gallium arsenic epitaxial material manufacuring device with a barrier layer is used in the method and coupled with a reading circuit after manufacturing of a detector array device, the substrate is thinned through the wet method and dry method combination technology, and the quantum efficiency of the device in the visible light band is improved. In addition, the planar indium gallium arsenic infrared detector chip manufactured through the novel method achieves wavelength extension, and meanwhile can also keep the quantum efficiency and dark current equivalent to those of the traditional indium gallium arsenic infrared detector at the regular band.

Method for manufacturing planar indium gallium arsenic infrared detector chip with extended wavelength

According to excellent photoelectric properties of InGaAs epitaxial material, and important application of the spectral bands at center wavelength of 1.38 µm and 1.60µm, the new-type monolithic dual-band InGaAs detector is studied in this paper. The detector was designed and fabricated with me sa structure and Fabry-Perot ca vity by thermal evaporation. The current-voltage characteristics, response spectra of mono lithic detector were measured. The bandwidths of 1.38 µm and 1.60µm waveband detector are 46nm and 54 nm respectively. A 400×2 dual-waveband monolithic detector was wire-bonded with two 400×1 readout circuits, to form 400×2 dual-waveband InGaAs focal plane arrays (FPAs). At room temperature, the detectivity D*, non-uniformity, response bandwidth and the non-operative pixel ratio of 1.38 µm waveband FPAs are 7.71×10 11 cmHz 1/2 /W, 6.20%, 46nm and 0.25%, respectively, and the ones of 1.60 µm waveband FPAs are 6.06×10 11 cmHz 1/2 /W, 3.20%, 54nm and 0.25%, respectively. The monolithic dual-waveband InGaAs focal plane arrays (FPAs) plays an important roles in developing compact, low-cost and high-precision photoelectric detection (imaging) system. Keywords: InGaAs; dual-waveband; monolithic in tegration; filter microstructure

The novel dual-waveband SWIR InGaAs FPAs with monolithic integration filter microstructure

The invention discloses a sub-pixel structured planar InGaAs infrared detector chip which structurally comprises a sub-pixel structured PN node area and a carrier lateral collecting area The infrared detector chip provided by the invention introduces a sub-pixel structure, utilizes the lateral collection effect of the carrier, and generates a situation that the photoproduction carrier in the carrier lateral collecting area can be effectively absorbed by adjacent sub-pixels; under the condition that quantum efficiency of the detector is not reduced, and a photosensor can respond uniformly; and besides, due to the structure, the diffusion heat damage is effectively reduced with a reduced diffusion area, the surface recombination is reduced with the introduction of double-layered passivation technology, the service life of the minority carrier is prolonged, and the dark current of the device is reduced; and due to the structure, as for a linear detector, the blind pixel rate can be effectively reduced, and the extension and cross talk of the photosensor are suppressed The novel planar device structure can suppress cross talk, and reduce both device blind pixel rate and device dark current

Yunji Wang

Papers

Monolithic integrated InGaAs near-infrared detector for sub-wavelength micro-polarization grating

Inductively coupled plasma chemical vapor deposition silicon nitride for passivation of In0.83Ga0.17As photodiodes

Method for manufacturing planar indium gallium arsenic infrared detector chip with extended wavelength

The novel dual-waveband SWIR InGaAs FPAs with monolithic integration filter microstructure

Sub-pixel structured planar InGaAs infrared detector chip