A dry etching method for etching an aluminum (Al) based layer for effectively combatting the after-corrosion in accordance with three aspects. In the first aspect, while a resist mask and chlorine based gas as known per se are used, S 2 F 2 is used during etching of the barrier metal layer. In this manner, residual chlorine in a carbonaceous polymer as a sidewall protection material or a resist mask is replaced by fluorine, whilst sulfur yielded from S 2 F 2 under conditions of discharge dissociation is deposited to provide for sidewall protection effects. In the second aspect, a SiO 2 mask and an S 2 Cl 2 etching gas are used. Since the sidewall protection material is solely sulfur yielded from S 2 Cl 2 , it becomes possible to avoid the effects of the residual chlorine. In the third aspect, an neutral Ar beam is irradiated at a suitable stage in the etching process for increasing the resistance of the SiO 2 mask against reducing compounds contained in an etching gas for the layer of the aluminum-based material. By irradiation of the neutral beam, a reduction-resistant layer is produced on the surface of the SiO 2 mask to render it possible to reduce the mask thickness without producing problems such as increased step differences on the wafer surface.

Dry etching method

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers. A common bottom section may cooperate with a plurality of different top sections to form segmented susceptors suitable for supporting various sized wafers.

Wafer support system

A plasma etching apparatus for a semiconductor wafer includes a susceptor arranged in a vacuum process chamber. A groove for flowing a heat transfer gas is formed in the mounting surface of the susceptor. The groove includes an annular groove portion formed along the peripheral edge of the mounting surface, and a gas path vertically extending through the susceptor is connected to the annular groove portion. A sheet-like electrostatic chuck is airtightly adhered to the mounting surface of the susceptor to cover the groove. A plurality of through holes are formed in the electrostatic chuck, and these holes are arranged along an above the groove. The heat transfer gas is supplied between the electrostatic chuck and the semiconductor wafer through the gas path, the groove, and the through holes. The heat transfer gas contributes to transfer of cold from a liquid nitrogen source arranged under the susceptor to the wafer.

Stage having electrostatic chuck and plasma processing apparatus using same

A rotatable substrate supporting mechanism for use in a chemical vapor deposition reaction chamber of the type used in producing semi-conductor devices is provided with a susceptor for supporting a single substrate, or wafer, for rotation about an axis normal to the center of the wafer. The mechanism is provided with a temperature sensing system for producing signals indicative of sensed temperatures taken at the center of the susceptor and at various points about the periphery thereof. A gas purging system is provided for inhibiting the flow of reactant gas in unwanted areas of the reaction chamber and in the supporting system itself. Rotational driving of the mechanism is accomplished by a variable speed motor under control of a circuit which stops and starts the rotation at controlled speeds and stops the rotation at a home position for enhancing the handling of the wafers.

Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment

This invention relates to a method and apparatus for controlling temperature of a sample and is intended to prevent a sample from being deformed by the pressure of a heat transmission gas by mounting and fixing the sample being mounted and processed in a vacuum on and to the sample stand and supplying the heat transmission gas to the gap between the under surface of the sample thus fixed and the sample stand; effectively control the temperature of the sample being processed in a vacuum by limiting the size of the gap between the under surface of the sample and the sample stand; and make the heat transmission gas least affect the process by limiting the flow of the heat transmission gas in the vacuum process chamber.

Method and apparatus for controlling sample temperature

This invention relates to a plasma treating method and apparatus therefor. The plasma treating method comprises rendering a gas having a critical potential plasmic under a reduced pressure and changing an acceleration voltage for accelerating ions in the plasma towards a sample interposing the critical potential. The plasma treating apparatus comprises means for rendering a gas having a critical potential plasmic under a reduced pressure and means for changing an acceleration voltage for accelerating ions in the plasma towards a sample interposing the critical potential. According to the present invention, the etching step and the film formation step can be carried out alternately and the plasma treating time can be shortened.

Plasma treating method and apparatus therefor

A semiconductor substrate transport system includes a semiconductor substrate holder for holding semiconductor substrates to be transported, a linear pulse motor for driving and reciprocating the semiconductor substrate holder, a pulse oscillator connected to the linear pulse motor, an arrangement for holding a clearance of the linear pulse motor, and guide for guiding the reciprocating motion of the linear pulse motor. The semiconductor substrate holder, the linear pulse motor, the clearance holding arrangement and the guide are installed in a chamber which is brought into a vacuum atmosphere, whereby the appearance of dust during the transport of the semiconductor substrates can be suppressed, and the available percentage and throughput of the semiconductor substrates processed or to be processed by a semiconductor production apparatus can be enhanced.

Semiconductor substrate transport system

A vacuum processing unit and apparatus comprises a buffer chamber that can be evacuated, a processing chamber that can be communicated with said buffer chamber a first sample carrier installed in said buffer chamber, a vacuum opening/closing device provided in the buffer chamber to correspond to the first sample carrier, a vacuum prechamber provided for the buffer chamber via the vacuum opening/closing device, a second sample carrier which carries the sample between the vacuum prechamber and the first sample carrier via the vacuum opening/closing device, and a third sample carrier which carries the sample between said first sample carrier and the processing chamber. The vacuum processing units can be connected in groups via vacuum opening/closing devices provided for the buffer chambers in locations corresponding to the end of the first sample carriers therein. The number of connected processing chambers can be freely changed to meet a change in the process or the manufacturing line.

Vacuum processing unit and apparatus

In a microwave plasma generating method and apparatus according to the present invention, a slow wave structure is disposed in the propagation region of microwaves, and the microwaves are introduced at a delayed phase velocity into a discharge chamber so that treating gases are transformed into plasma. Thus, the phase velocity of the microwaves is adjusted to a relatively low velocity, at which charged particles are distributed most densely in the plasma, so that the energy may be efficiently transformed to many more charged particles in the plasma. Thus, the plasma of high density is generated to improve a plasma treating rate.

Yutaka Kakehi

Papers

Method and apparatus for controlling sample temperature

Plasma treating method and apparatus therefor

Semiconductor substrate transport system

Vacuum processing unit and apparatus

Microwave plasma generating method and apparatus