Y
Yutaka Matsui
Researcher at Tokyo Electron
Publications - 11
Citations - 326
Yutaka Matsui is an academic researcher from Tokyo Electron. The author has contributed to research in topics: Plasma processing & Electrode. The author has an hindex of 6, co-authored 11 publications receiving 326 citations.
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Patent
Method of cleaning substrate processing chamber, storage medium, and substrate processing chamber
Masanobu Honda,Yutaka Matsui +1 more
TL;DR: In this paper, a method of cleaning a substrate processing chamber that enables formation of an oxide film on a surface of a processing chamber inside component to be prevented was proposed, where an oxide removal processing was carried out on the upper electrode plate 38 using fluorine ions and fluorine radicals produced from carbon tetrafluoride gas introduced into the processing space S.
Patent
Plasma processing method and apparatus
TL;DR: In this paper, a patterned resist film was used as a mask to remove the deposits accumulated inside a processing chamber during the step of etching the target object by using a processing gas containing at least an O 2 gas, and ashing the resist film by using processing gas with at least O 2 2 gas.
Patent
Structure for plasma processing chamber, plasma processing chamber, plasma processing apparatus, and plasma processing chamber component
TL;DR: In this article, a gas-introducing showerhead is disposed in the plasma processing chamber, including a container 11 having a process space S for receiving a semiconductor wafer W, and a susceptor 12 disposed in container 11, for mounting the received semiconductor Wafer W thereon.
Patent
Plasma processing apparatus, plasma processing method, and storage medium
TL;DR: In this article, an upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor, and a DC power source is connected to the upper plate.
Patent
Substrate processing chamber, cleaning method thereof, and storage medium
TL;DR: In this article, the authors proposed a cleaning method of a substrate processing chamber, capable of preventing the formation of oxide film on the surface of components in the substrate processing chambers, by using high-frequency power of 40 MHz and 2 MHz.