Magnetic resonance imaging apparatus

In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface Hydrogen is introduced into The active layer A thin film comprising SiO x N y is formed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiO x N y  Also, a thin film comprising SiO x N y is formed under the active layer The active layer includes a metal element at a concentration of 1×10 15 to 1×10 19 cm −3 and hydrogen at a concentration of 2×10 19 to 5×10 21 cm −3 

Semiconductor device and method for forming the same

A method or utilizing electroless copper deposition to selectively form encapsulated copper plugs to connect conductive regions on a semiconductor. A via opening in an inter-level dielectric (ILD) provides a path for connecting two conductive regions separated by the ILD. Once the underlying metal layer is exposed by the via opening, a SiN or SiON dielectric encapsulation layer is formed along the sidewalls of the via. Then, a contact displacement technique is used to form a thin activation layer of copper on a barrier metal, such as TiN, which is present as a covering layer on the underlying metal layer. After the contact displacement of copper on the barrier layer at the bottom of the via, an electroless copper deposition technique is then used to auto-catalytically deposit copper in the via. The electroless copper deposition continues until the via is almost filled, but leaving sufficient room at the top in order to form an upper encapsulation layer. The SiN or SiON sidewalls, the bottom barrier layer and the cap barrier layer function to fully encapsulate the copper plug in the via. The plug is then annealed.

Selective electroless copper deposited interconnect plugs for ULSI applications

A technique for electrolessly depositing a CoWP barrier material on to copper and electrolessly depositing copper onto a CoWP barrier material to prevent copper diffusion when forming layers and/or structures on a semiconductor wafer.

Use of cobalt tungsten phosphide as a barrier material for copper metallization

An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.

Semiconductor Device and Method of Fabricating the Same

A semiconductor pressure transducer assembly comprising a silicon diaphragm assembly and a glass covering member. The silicon diaphragm assembly has a circular diaphragm portion of thin silicon which is formed using etching, and a thick supporting portion therearound. Piezoresistive elements of a piezoresistive bridge circuit and conducting paths for electrically connection thereof are formed on the silicon diaphragm assembly. On a surface of the silicon diaphragm assembly, a passivating layer of silicon dioxide are formed in uniform thickness, and further on a surface of the passivating layer is formed a layer of polysilicon on the supporting portion of the silicon diaphragm assembly. In the passivating layer, a contacting window is formed, through which the polysilicon layer is electrically connected to the silicon diaphragm assembly. The covering member of borosilicate glass having a circular well is mounted and bonded onto the silicon diaphragm assembly in contact with the polysilicon layer using Anodic Bonding method. And the processed silicon diaphragm assembly has a flat surface thereof, on which the piezoresistive elements and the conducting paths are constructed using Ion Implantation method, or reforming a silicon dioxide layer thereon after removing another silicon dioxide layer used as mask in diffusing process.

Semiconductor absolute pressure transducer assembly and method

A thin film transistor formed on an insulating sulstrate is disclosed in which metal silicide layers are formed in a thin film made of a monocrystalline, polycrystalline, or amorphous semiconductor material, to be used as source and drain regions, and further a gate electrode includes a metal silicide layer.

Thin film transistor formed on insulating substrate

A process for controlling an oxygen content of a non-superconductive or superconductive oxide is provided, in which a beam of particles such as ions, electrons or neutrons or an electromagnetic radiation is applied to the non-superconductive or superconductive oxide of a perovskite type such as YBa 2 Cu 3 O 7-x , thereby increasing or reducing the oxygen content of the oxide at the sites of oxygen in the crystal lattice of the oxide. Furthermore, a superconductive device such as a superconductive magnet, superconductive power transmission wire, superconductive transformer, superconductive shield, permanent current switch and electronic element is made by utilizing the process for controlling the oxygen concentration of the superconductive oxide.

Process for controlling oxygen content of superconductive oxide, superconductive device and process for production thereof

An anti-reflection film (2) is produced on the panel surface of a cathode-ray tube (1) by:
 (A) preparing a solution (8) for forming an anti-reflection film (2), which contains water and an alkoxide having the formula, 
        M(OR) n 
wherein M is Si or a metal selected from the group consisting of Ti, Al, Zr, Sn, In, Sb and Zn; R is an alkyl group having 1-10 carbon atoms; n is an integer of from 1 to 8; and when n is not 1, the alkyl groups represented by R may be the same or different, (B) coating the solution (8) for forming an anti-reflection film (2) on the outermost surface of the panel of a cathode-ray tube (1), and (C) applying an ultraviolet light (7) to the solution (8) for forming an anti-reflection film (2) coated on said surface to cure the solution to form a transparent film with fine roughness. This production method is carried out using an apparatus having:
 (a) a coating means (3) for coating the above solution (8) for forming an anti-reflection film (2) on the outermost surface of the panel of a cathode-ray tube (1), (b) a transferring means (4) for transferring the solution-coated cathode-ray tube (1), and (c) an ultraviolet light-applying means (7) for photocuring the solution (8) coated on the cathode-ray tube (1) during the transfer of the solution-coated cathode-ray tube. In the above method, when a silicon alkoxide is used as the metal alkoxide, there can be obtained a cathode-ray tube having an anti-reflection film made of alkali-free silica on the outermost surface of the panel, said anti-reflection film giving a ratio of Si-O-Si peak intensity to Si-OH peak intensity of 4 or more when measured for infrared spectrum. Further embodiments include an antistatic layer and the inclusion of an organic dye into the anti-reflection film.

Method and apparatus for forming an anti-reflection film for a cathode-ray tube

A specimen cartridge fashioned of a good thermal conductor, with an outer frame being fashioned of heat insulating material, and with a connecting rod being fashioned of a poor thermal conductor. A temperature distribution of the specimen is uniform and a temperature drift is reduced, with a thermal expansion of a specimen cartridge tilting rod not affecting the tilting angle, thereby making it possible to perform various highly accurate observations and measurements with an electron microscope.

Yutaka Misawa

Papers

Semiconductor absolute pressure transducer assembly and method

Thin film transistor formed on insulating substrate

Process for controlling oxygen content of superconductive oxide, superconductive device and process for production thereof

Method and apparatus for forming an anti-reflection film for a cathode-ray tube

Electron microscope specimen holder