Improved resistive switching behavior of multiwalled carbon nanotube/TiO2 nanorods composite film by increased oxygen vacancy reservoir

Bifurcation analysis is a powerful tool for studying nonlinear problems. However, its superiorities may short when considering acquired data sets instead of controllable chaos generator signals. In this case recurrent and statistical analysis may help to investigate the system. In this paper we compare several methods for estimation of number of scrolls in a memristive circuit model with the multi-scroll chaotic attractor. The techniques of histograms, kernel density estimation, moving average and recurrent analysis are considered. Two high-resolution dynamical maps are presented for the investigated circuit. The moving average method was found to be the most reliable and accurate method for constructing dynamical maps. The results of the work can be used for hidden attractor detection, multiwing systems research and studying other aspects of nonlinear dynamical systems.

Bifurcation and recurrent analysis of memristive circuits

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Методы бифуркационного и рекуррентного анализа нелинейных динамических систем на примере мемристивной цепи

The invention relates to a programmable circuit based on a memristor/a metal-oxide-semiconductor field-effect transistor (MOSFET) and a realization method of the programmable circuit. Through using the memiristor and a metal oxide semiconductor (MOS) tube in a combining manner, a programming voltage can generate a stable current which changes the resistance of the memiristor, the changeability and nonvolatility of the resistance of the memirstor are brought into play, and a programming effect is achieved. By the method disclosed by the invention, a memiristor model is successfully built in simulation program with integrated circuit emphasis (SPICE) software, the programmable circuit based on the memristor is put forward by using the model, and simulation validation is performed for the whole circuit. The programmable circuit combined by the memiristor and the MOS tube is simple in structure, small in tube number, high in integration level, and in favor of further developing integrated circuits to nanoscale.

Programmable circuit based on memristor/metal-oxide-semiconductor field-effect transistor (MOSFET) and realization method thereof

The logic block of field programmable gate array (FPGA) basic unit is mainly composed of look-up-table (LUT). The conventional LUT using the static random access memory (SRAM), which leads to FPGA almost reach the limitation in term of the density, speed, and configuration overhead. In this paper, a new scheme of improved memristor-based look-up-table (MLUT) is proposed. The MLUT circuit, which is compatible with the mainstream circuit in FPGA. The MLUT effectively solving the limitations of field FPGA and MLUT is more efficient in data transmission than traditional LUT. In addition, the proposed circuit can achieve any combination logic function in MLUT by specific configuration. As a case study, a three-input LUT circuit based on memristor is designed and the correctness of the results is simulated in PSPICE software. The MLUT can replace traditional SRAM-based LUTs and further improve FPGA performance.

A Three Input Look-Up-Table Design Based on Memristor-CMOS

The Memristor, as the newly discovered fourth circuit element, is being used in many applications such as memory and digital circuits, as well as neuromorphic systems. The unique characteristics of the memristor: retaining its resistance state, ability to behave as a switch and consequently the possibility to be used in both memory and digital circuits. Its resistance can also change gradually allowing the potential of mimicking neural chemical synapses. These applications of the memristor will be reviewed and discussed using a nonlinear mathematical model of physical bipolar memristor devices.

Memristors for digital, memory and neuromorphic circuits

NMOS Logic family based on memristors and NMOS transistors is proposed The used memristor is a special metal-insulator-metal junction with unipolar switching characteristics The suggested design can have more than 4X density improvement, with similar delay and power performance compared to CMOS logic family The proposed NMOS Logic family can be implemented and fabricated using nMOS process technology only, leading to a significant cost reduction since the pMOS devices are not required

Z. Abid

Papers

Memristors for digital, memory and neuromorphic circuits

Memristors-based NMOS logic circuits