This paper presents the findings of a design, modeling, and fabrication study of ZnO and PbZr/sub 03/Ti/sub 07/O/sub 3/ thin-film bulk acoustic resonators and filters Measurements of the high-frequency responses of ZnO resonators having different area are used to develop an acoustic model that accurately represents resonator impedance data The models are also used to interpret S-parameter measurements on thin-film PbZr/sub 03/Ti/sub 07/O/sub 3/-based resonators and a value for the effective coupling coefficient deduced ZnO and PbZr/sub 03/Ti/sub 07/O/sub 3/ ladder filters were designed based on measured impedance data from single resonators Ladder filters based on PbZr/sub 03/Ti/sub 07/O/sub 3/ have been fabricated for the first time It is shown that the high coupling coefficient in PbZr/sub 03/Ti/sub 07/O/sub 3/ leads to bandwidths in the range 100/spl sim/120 MHz at a center frequency of 16 GHz, larger than the bandwidths of ZnO-based filters

Thin-film bulk acoustic resonators and filters using ZnO and lead-zirconium-titanate thin films

Antiferroelectric lanthanum-modified PbZrO3 thin films with La contents between 0 and 6 at. % have been deposited on Pt(111)/Ti/SiO2/Si substrate by sol-gel route. On the extent of La-modification, maximum polarization (Pmax) and recoverable energy density (W) have been enhanced followed by their subsequent reduction. A maximum Pmax ( ∼ 0.54 C/m2 at ∼ 60 MV/m) as well as a maximum W ( ∼ 14.9 J/cc at ∼ 60 MV/m) have been achieved on 5% La modification. Both Pmax and W have been found to be strongly dependent on La-induced crystallographic orientations.

Enhancement of charge and energy storage in sol-gel derived pure and La-modified PbZrO3 thin films

We have investigated the effects of Mn doping on the ferroelectric and pyroelectric properties of Pb(Zr0.3Ti0.7)O3 (PZT) thin films on substrates Pt/Ti/SiO2/Si. The Mn-doped (1 mol %) PZT (PMZT) showed almost no hysteretic fatigue up to 1010 switching bipolar pulse cycles, coupled with excellent retention properties. We present evidence that while a low permittivity interfacial layer forms between the Pt electrode and PZT films, this does not occur in PMZT. We propose that Mn dopants are able to reduce oxygen vacancy mobility in PZT films and Mn2+ ions consume the oxygen vacancies generated during repeated switching, forming Mn4+ ions. These mechanisms are probably responsible for their low observed fatigue characteristics. Mn doping brings additional benefits to the electrical properties of PZT films. The relevant pyroelectric coefficients (p) of a 700 nm thick film are 3.52×10−4 C m−2 K−1 and detectivity figures of merit FD=3.85×10−5 Pa−0.5 at 33 Hz for Mn-doped PZT, compared with p=2.11×10−4 C m−2 K−1 and FD=1.07×10−5 Pa−0.5 for the undoped PZT films. This means that the Mn-doped PZT thin films are excellent candidates as device materials for both memory and pyroelectric applications.

Improved ferroelectric and pyroelectric properties in Mn-doped lead zirconate titanate thin films

Thin films of ferroelectric lead zirconate titanate (PbZr0.3Ti0.7O3 PZT30/70) and manganese-doped lead zirconate titanate ((Pb(Zr0.3Ti0.7)1-xMnx)O3, where x = 0.01, PM01ZT30/70; and x = 0.03, PM03ZT30/70) have been prepared using sol-gel processing techniques. These materials can be used as the pyroelectric thin films in uncooled infrared detectors. The thin films were prepared via a sol-gel route based on a hybrid solvent of methanol and ethanol with acetic acid, ethanolamine and ethylene glycol as additives. The final solution is non-moisture sensitive and stable. Films deposited on Pt/Ti/SiO2/Si substrates and annealed on a hot plate at 500-530 °C for a few minutes were seen to fully crystallize into the required perovskite phase and showed excellent ferroelectric behaviour, demonstrated by reproducible hysteresis loops (Pr = 33-37 µC cm-2, Ec( + ) = 70-100 kV cm-1, Ec(-) = -170 to -140 kV cm-1). The pyroelectric coefficient (p) was measured using the Byer-Roundy method. At 20 °C, p was 2.11×10-4 C m-2 K-1 for PZT30/70, 3.00×10-4 C m-2 K-1 for PM01ZT30/70 and 2.40×10-4 C m-2 K-1 for PM03ZT30/70 thin films. The detectivity figure-of-merit (FD) was 1.07×10-5 Pa-0.5 for PZT30/70, 3.07×10-5 Pa-0.5 for PM01ZT30/70 and 1.07×10-5 Pa-0.5 for PM03ZT30/70. These figures compare well with values reported previously.

https://iopscience.iop.org/article/10.1088/0022-3727/34/15/308/pdf

Sol-gel PZT and Mn-doped PZT thin films for pyroelectric applications

Effect of multi-coating process on the orientation and microstructure of lead zirconate titanate (PZT) thin films derived by chemical solution deposition

Pyroelectric lead zirconate titanate (PZT) thin films have been prepared by a sol-gel method and characterized by x-ray diffraction and transmission electron microscopy (TEM). A metastable Pt3Pb intermetallic phase has been identified. The formation of this metastable phase was found to depend on the drying temperature, the thickness of the as-deposited film, annealing temperature, and annealing time. Perovskite PZT was found to nucleate on top of the intermetallic phase, rather than directly on Pt. The improved lattice match between the intermetallic (a0=4.05 A) and perovskite PZT(a0=4.035 A) as compared to between Pt(a0=3.9231 A) and the perovskite is believed to substantially reduce the activation energy for the nucleation of perovskite on Pt. Using this effect, (111) perovskite PZT has been grown at a temperature as low as 440 °C. The formation of the intermetallic phase is believed to facilitate the (111) film orientation. The growth kinetics of the PZT were analyzed using the Avrami model, and from ...

Z. Huang

Papers

Low temperature crystallization of lead zirconate titanate thin films by a sol-gel method