If you've not been involved in MEMS (MicroElectroMechanical Systems) technology or had the cause to use MEMS devices, then you may wonder what all the fuss is about. What are MEMS anyway? What's the difference between MEMS and MST (MicroSystems Technology)? What are the advantages over existing technologies? If you have ever found yourself pondering over such questions, then this book may be for you. As the title suggests, the main aim is to provide an introduction to MEMS by describing the processes and materials available and by using examples of commercially available devices. The intended readership are those technical managers, engineers, scientists and graduate students who are keen to learn about MEMS but have little or no experience of the technology. I was particularly pleased to note that Maluf has dedicated a whole chapter to the important (and often difficult) area of packaging. The first three chapters provide a general overview of the technology. Within the first three pages we are introduced to the MEMS versus MST question, only to discover that the difference depends on where you live! The United States prefer MEMS, while the Europeans use the handle MST. (Note to self: tell colleagues in MEMS group at Southampton). A good account is given of the basic materials used in the technology, including silicon, silicon oxide/nitride/carbide, metals, polymers, quartz and gallium arsenide. The various processes involved in the creation of MEMS devices are also described. A good treatment is given to etching and bonding in addition to the various deposition techniques. It was interesting to note that the author doesn't make a big issue of the differences between bulk and surface micromachined devices; the approach seems to be `here's your toolbag - get on with it'. One of the great strengths of this book is the coverage of commercial MEMS structures. Arising as they have, from essentially a planar technology, MEMS devices are often elaborate three-dimensional creations, and 2D drawings don't do them much justice. I have to say that I was extremely impressed with the many aesthetic isometric views of some of these wonderful structures. Pressure sensors, inkjet print nozzles, mass flow sensors, accelerometers, valves and micromirrors are all given sufficient treatment to describe the fundamental behaviour and design philosophy, but without the mathematical rigour expected for a traditional journal paper. Chapter 5 addresses the promise of the technology as a means of enabling a new range of applications. The concept of using MEMS devices as key elements within complex systems (or even microsystems!) is explored. The so-called `lab-on-a-chip' approach is described, whereby complex analytical systems are integrated onto a single chip together with the associated micropumps and microvalves. The design and fabrication of MEMS devices are important issues by themselves. A key area, often overlooked, is that of packaging. Painstaking modelling and intricate fabrication methodologies can produce resonator structures oscillating at precisely, say, 125 kHz. The device is then mounted in a dual-in-line carrier and the frequency shifts by 10 kHz because of the additional internal stresses produced. Packaging issues can't be decoupled from those of the micromachined components. Many of these issues, such as protective coatings, thermal management, calibration etc, are covered briefly in the final chapter. Overall, I found this book informative and interesting. It has a broad appeal and gives a good insight into this fascinating and exciting subject area. Neil White

An Introduction to Microelectromechanical Systems Engineering

Very deep treches (up to 200 um) with high aspect ratios (up to 10) in silicon are etched using a fluorine-based plasma (SF6/O2/CHF3). Isotropic, positively and megatively (i.e. reverse) tapered as well as fully vertical walls with smooth surfaces are achieved by controlling the plasma chemistry. A convenient way to find the processing conditions needed for a vertical wall is described: the Black Silicon Method. This new procedure is checked for three different Reactive Ion Etchers (RIE); two parallel plate reactors and a hexode. The influence of the r.f. power, pressure, and gas mixture on the profile will be shown. Scanning Electron Microscope (SEM) photos are included to demonstrate the Black Silicon Method, the influence of the gases on the profile, and the use of this method in fabricating Micro Electro Mechanical Systems (MEMS).

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The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control

Microfluidics is an emerging field that has given rise to a large number of scientific and technological developments over the last few years. This review reports on the use of various materials, such as silicon, glass and polymers, and their related technologies for the manufacturing of simple microchannels and complex systems. It also presents the main application fields concerned with the different technologies and the most significant results reported by academic and industrial teams. Finally, it demonstrates the advantage of developing approaches for associating polymer technologies for manufacturing of fluidic elements with integration of active or sensitive elements, particularly silicon devices.

https://iopscience.iop.org/article/10.1088/0960-1317/17/5/R01/pdf

Lab-on-chip technologies: making a microfluidic network and coupling it into a complete microsystem : a review

This article is a brief review of dry etching as applied to pattern transfer, primarily in silicon technology. It focuses on concepts and topics for etching materials of interest in micromechanics. The basis of plasma-assisted etching, the main dry etching technique, is explained and plasma system configurations are described such as reactive ion etching (RIE). An important feature of RIE is its ability to achieve etch directionality. The mechanism behind this directionality and various plasma chemistries to fulfil this task will be explained. Multi-step plasma chemistries are found to be useful to etch, release and passivate micromechanical structures in one run successfully. Plasma etching is extremely sensitive to many variables, making etch results inconsistent and irreproducible. Therefore, important plasma parameters, mask materials and their influences will be treated. Moreover, RIE has its own specific problems, and solutions will be formulated. The result of an RIE process depends in a non-linear way on a great number of parameters. Therefore, a careful data acquisition is necessary. Also, plasma monitoring is needed for the determination of the etch end point for a given process. This review is ended with some promising current trends in plasma etching.

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A survey on the reactive ion etching of silicon in microtechnology

Nanotube films and articles and methods of making the same are disclosed. A conductive article includes an aggregate of nanotube segments in which the nanotube segments contact other nanotube segments to define a plurality of conductive pathways along the article. The nanotube segments may be single walled carbon nanotubes, or multi-walled carbon nanotubes. The various segments may have different lengths and may include segments having a length shorter than the length of the article. The articles so formed may be disposed on substrates, and may form an electrical network of nanotubes within the article itself. Conductive articles may be made on a substrate by forming a nanotube fabric on the substrate, and defining a pattern within the fabric in which the pattern corresponds to the conductive article. The nanotube fabric may be formed by growing the nanotube fabric on the substrate using a catalyst, for example, in which the catalyst is a gas phase catalyst, or in which the catalyst is a metallic gas phase catalyst. The nanotube fabric may be formed by depositing a solution of suspended nanotubes on the substrate. The deposited solution may be spun to create a spin-coating of the solution. The solution may be deposited by dipping the substrate into the solution. The nanotube fabric is formed by spraying an aerosol having nanotubes onto a surface of the substrate.

Methods of nanotube films and articles

A single-crystal slhcon, high aspect ratlo, low-temperature process sequence for the fabrlcatlon of suspended rmcroelectromechamcal structures (MEMS) usmg a smgle hthography step and reactwe Ion etching (RIE) IS presented The process IS called SCRJZAM I (single-crystal reactwe etchmg and metalhzatmn) SCREAM I IS a bulk mlcromachmmg process that uses RIE of a s~hcon substrate to fabricate suspended movable smgle-crystal s&on (SCS) beam structures Beam elements wth aspect ratios of 10 to 1 and widths rangmg from 0 5 to 4 0 Frn have been fabricated All process steps are low temperature (<3OO “C), and only conventronal sd~con fabrlcation tools are used photohthography, RIE, MIE, plasma-enhanced chemxal-vapor deposrtlon (PECVD) and sputter deposlhon SCREAM I IS a self-ahgned process and uses a smgle lithography step to define beams and structures srmultaneously as well as all necessary contact pads, electrIcal mterconnects and lateral capaators SCREAM I has been specifically deslgned for integration with standard Integrated cmxnt (IC) processes, so MEM deuces can be fabricated adjacent to prefabricated analog and dIgItal carcuitry In this paper we present process parameters for the fabncatlon of discrete SCREAM I devices We also discuss mask design rules and show micrographs of fabncated deuces

SCREAM I: A single mask, single-crystal silicon, reactive ion etching process for microelectromechanical structures

The invention provides a single mask, low temperature reactive ion etching process for fabricating high aspect ratio, released single crystal microelectromechanical structures independent of crystal orientation. A dielectric mask (12) on a single-crystal substrate (154) is patterned to define isolating trenches. A protective conformal layer (28) is applied to the resultant structure. The conformal layer (28) on the floor of the trenches is removed and a second etch deepens the trench to expose the mesa walls which are removed during the release step by isotropic etching. A metal layer (44) is formed on the resultant structure providing opposed plates (156) and (158) of a capacitor. The cantilever beam (52) with the supporting end wall (152) extends the grid-like structure (150) into the protection of the deepened isolation trenches (54). A membrane can be added to the released structures to increase their weight for use in accelerometers, and polished for use as movable mirrors.

Microstructures and single mask, single-crystal process for fabrication thereof

A microelectromechanical compound stage microactuator assembly capable of motion along x, y, and z axes for positioning and scanning integrated electromechanical sensors and actuators is fabricated from submicron suspended single crystal silicon beams. The microactuator incorporates an interconnect system for mechanically supporting a central stage and for providing electrical connections to componants of the microactuator and to devices carried thereby. The microactuator is fabricated using a modified single crystal reactive etching and metallization process which incorporates an isolation process utilizing thermal oxidation of selected regions of the device to provide insulating segments which define conductive paths from external circuitry to the actuator components and to microelectronic devices such as gated field emitters carried by the actuator.

Compound stage MEM actuator suspended for multidimensional motion

A method of fabricating released microelectromechanical and microoptomechanical structures having electrically isolating segments from single crystal silicon includes thermal oxidation steps. The structures are defined using a single mask patterning process, and the structure is partially thermally oxidized. This is followed by a second masking step which is used to define segments to be completely thermally oxidized, and a second oxidation step completes the fabrication of the isolating segment. Thereafter the structure is released from the underlying substrate.

Microstructures and high temperature isolation process for fabrication thereof

A single mask, low temperature reactive ion etching process for fabricating high aspect ratio, released single crystal microelectromechanical structures independently of crystal orientation.

Z. Lisa Zhang

Papers

SCREAM I: A single mask, single-crystal silicon, reactive ion etching process for microelectromechanical structures

Microstructures and single mask, single-crystal process for fabrication thereof

Compound stage MEM actuator suspended for multidimensional motion

Microstructures and high temperature isolation process for fabrication thereof

Electrically isolated released microstructures