An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

A method for forming a silicon oxide film includes disposing a silicon oxide film on a surface of a target substrate, and performing a reformation process on the silicon oxide film. The reformation process is performed by annealing the silicon oxide film while exposing the silicon oxide film to oxygen radicals and hydroxyl group radicals.

Method and apparatus for forming silicon oxide film

A zirconium silicate layer 103 is formed on a silicon substrate 100, a zirconium oxide layer 102 is also formed on the zirconium silicate layer 103, and the zirconium oxide layer 102 is then removed, thereby forming a gate insulating film 104 made of the zirconium silicate layer 103.

Semiconductor device and method for manufacture thereof

A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.

Method for fabricating semiconductor integrated circuit device

A substrate is cleaned by performing a scrubbing process on a surface to be cleaned of the rotating substrate with a roll-shaped cleaning member while holding an outer circumferential surface of the roll-shaped cleaning member in contact with the surface to be cleaned of the substrate across a predetermined contact width. During at least a part of the scrubbing process, the roll-shaped cleaning member is placed at an offset cleaning position where the central axis of the roll-shaped cleaning member is spaced from the central axis of the substrate by a distance which is 0.14 to 0.5 times the contact width. The surface to be cleaned of the substrate is scrubbed with more uniform cleaning intensity while taking into account the cleaning intensity at each position (area) along the radial direction of the surface to be cleaned of the substrate.

Method of and apparatus for cleaning substrate

PURPOSE: To easily remove particles and metal impurities which have adhered to the surface of a semiconductor substrate. CONSTITUTION: A silicon substrate 1 is cleaned by ultrapure water which contains ozone, a silicon oxide film 3 is formed, and particles 2 and metal impurities M are taken into the inside an the surface of the silicon oxide film 3. Then, the silicon substrate 1 is cleaned by a dilute hydrofluoric acid aqueous solution, the silicon oxide film 3 is etched and removed, and, at the same time, the particles 2 and the metal impurities M are removed. COPYRIGHT: (C)1994,JPO

Cleaning method of semiconductor substrate

PROBLEM TO BE SOLVED: To avoid causing irregularities by starting forming an Si oxide film by an oxidation method using a wet gas at an atmosphere temp. at which no Si atom releases from the Si layer surface to form the Si oxide film of desired thickness by the oxidation method using a wet gas. SOLUTION: An Si oxide film 42 is formed on the surface of an Si semiconductor substrate 40 by the oxidation method using a wet gas at an atmosphere temp. held at which no Si atom separates from the Si semiconductor substrate 40 surface and an Si oxide film 42 is formed on the surface of the Si semiconductor substrate 40 by the oxidation method using a wet gas at an atmosphere temp. held higher than the atmosphere temp. at which no Si atom separates from the Si semiconductor substrate 40. This avoids causing irregularities on the Si layer surface and improves the characteristics of the Si oxide film not contg. a dry oxide film of a less reliability in the finally formed Si oxide film.

Method of forming silicon oxide film

PROBLEM TO BE SOLVED: To form a silicon nitride oxidized film as a gate insulating film for preventing boron from punching through, to prevent nitrogen in the silicon nitride oxidized film from being concentrated on the interface of the gate insulating film and a silicon substrate, and to prevent the characteristic defect of a transistor by NBTI in a MIS semiconductor device. SOLUTION: The manufacturing method of the MIS semiconductor device having the gate insulating film constituted of the silicon nitride oxidized film 5 comprises a process for oxidizing the silicon substrate 1 by gas including an active oxygen species (a) and a process for forming the silicon nitride oxidized film 5 whose surface is nitrided by performing plasma nitriding the silicon oxidized film 3 (b).

Mis semiconductor device and manufacturing method therefor

PROBLEM TO BE SOLVED: To obtain such a state that there is no attachment of organic matters for a silicon insulating film without changing the characteristics of the silicon insulating film, by heat-treating the silicon insulating film in an oxydizing atmosphere of such a temperature that does not increase the thickness of the silicon insulating film. SOLUTION: On a surface-washed silicon semiconductor substrate 10, a silicon oxide film 12 which will serve for a gate insulating film is formed by pyrogenic method. The atmosphere of a thermal oxidation furnace is kept in an inert gas atmosphere until the temperature of the silicon semiconductor substrate 10 becomes the room temperature. The atmosphere of a reaction furnace into which a boat mounted with the silicon semiconductor substrate 10 is to be carried in is set to such a one that the volume ratio of nitrogen gas to oxygen gas is 9:1. Then, the atmospheric temperature of the reaction furnace is increased to 450°C at the rate of, for example, 10°C/min. After that, this oxidizing atmosphere and temperature is kept at it is for 10 minutes, during which the silicon oxide film 12 is heat-treated to burn and remove organic matters attaching to the surface of the film 12, resulting in almost no change in the thickness of the silicon oxide film. COPYRIGHT: (C)1999,JPO

Heat treatment of silicon insulating film and manufacture of semiconductor device

PROBLEM TO BE SOLVED: To provide a method for forming a silicon nitride oxide film which can stably form a thin silicon nitride oxide film having excellent characteristics, and can reliably suppress diffusion of boron atoms during formation of a gate electrode of a P type semiconductor element. SOLUTION: The formation method includes (1) a step of forming a silicon oxide film 42 by thermally oxidizing a surface of a silicon layer 40 at an atmosphere temperature at which hydrogen atoms terminated on its surface are not detached, and (2) a step of obtaining a silicon nitride oxide film 42A by subjecting the obtained silicon oxide film 42 to a nitriding process.

章秀柏木

Papers

Cleaning method of semiconductor substrate

Method of forming silicon oxide film

Mis semiconductor device and manufacturing method therefor

Heat treatment of silicon insulating film and manufacture of semiconductor device

Formation of silicon nitride oxide film and manufacture of p type semiconductor element

章秀 柏木

Papers

Cleaning method of semiconductor substrate

Method of forming silicon oxide film

Mis semiconductor device and manufacturing method therefor

Heat treatment of silicon insulating film and manufacture of semiconductor device

Formation of silicon nitride oxide film and manufacture of p type semiconductor element

章秀柏木