Patent
Cleaning method of semiconductor substrate
Akihide Kashiwagi,章秀 柏木 +1 more
TLDR
In this article, a silicon substrate 1 is cleaned by ultrapure water which contains ozone, a silicon oxide film 3 is formed, and particles 2 and metal impurities M are taken into the inside an the surface of the silicon oxide 3.Abstract:
PURPOSE: To easily remove particles and metal impurities which have adhered to the surface of a semiconductor substrate. CONSTITUTION: A silicon substrate 1 is cleaned by ultrapure water which contains ozone, a silicon oxide film 3 is formed, and particles 2 and metal impurities M are taken into the inside an the surface of the silicon oxide film 3. Then, the silicon substrate 1 is cleaned by a dilute hydrofluoric acid aqueous solution, the silicon oxide film 3 is etched and removed, and, at the same time, the particles 2 and the metal impurities M are removed. COPYRIGHT: (C)1994,JPOread more
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Patent
Method for Manufacturing Semiconductor Device
TL;DR: In this article, the authors proposed a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost.
Patent
Method of and apparatus for cleaning substrate
TL;DR: In this paper, a roll-shaped cleaning member is placed at an offset cleaning position where the central axis of the rolling member is spaced from the center of the rotating substrate by a distance which is 0.14 to 0.5 times the contact width.
Patent
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Kobayakawa Yusuke,Hata Kazuhiro +1 more
TL;DR: In this paper, the authors proposed a method of manufacturing a semiconductor device that includes: a process of forming a mask on the main surface of the semiconductor substrate; an insulating film on the substrate so as to cover the mask; subjecting the first insulating mask to anisotropic etching to form a sidewall spacer.
Patent
Post-planarization, pre-oxide removal ozone treatment
TL;DR: Washing a microelectronic substrate with an ozonated solution following planarization and proceeding removal of a native oxide layer through acid etching is a common technique for circuit repair.
Patent
Substrate treatment apparatus and substrate treatment method
TL;DR: A substrate treatment apparatus for removing an unnecessary substance from a surface of a substrate is described in this paper, where an oxidation liquid supply mechanism for supplying an oxidative liquid having an oxidative effect to the substrate surface; a physical cleaning mechanism for physically cleaning the substrate surfaces; and an etching liquid supplying an etch liquid having a etching effect on a substrate surface.