Two-dimensional (2D) materials have attracted tremendous research interest since the breakthrough of graphene. Their unique optical, electronic, and mechanical properties hold great potential for harnessing them as key components in novel applications for electronics and optoelectronics. Their atomic thickness and exposed huge surface even make them highly designable and manipulable, leading to the extensive application potentials. What's more, after acquiring the qualification for being the candidate for next-generation devices, the assembly of 2D materials monomers into mass or ordered structure is also of great importance, which will determine their ultimate industrialization. By designing the monomers and regulating their assembling behavior, the exploration of 2D materials toward the next-generation circuits can be spectacularly achieved. In this review, we will first overview the emerging 2D materials and then offer a clear guideline of varied physical and chemical strategies for tuning their properties. Furthermore, assembly strategies of 2D materials will also be included. Finally, challenges and outlooks in this promising field are featured on the basis of its current progress.

Exploring Two-Dimensional Materials toward the Next-Generation Circuits: From Monomer Design to Assembly Control

We have produced ultrathin epitaxial graphite films which show remarkable 2D electron gas (2DEG) behavior. The films, composed of typically 3 graphene sheets, were grown by thermal decomposition on the (0001) surface of 6H-SiC, and characterized by surface-science techniques. The low-temperature conductance spans a range of localization regimes according to the structural state (square resistance 1.5 kOhm to 225 kOhm at 4 K, with positive magnetoconductance). Low resistance samples show characteristics of weak-localization in two dimensions, from which we estimate elastic and inelastic mean free paths. At low field, the Hall resistance is linear up to 4.5 T, which is well-explained by n-type carriers of density 10^{12} cm^{-2} per graphene sheet. The most highly-ordered sample exhibits Shubnikov - de Haas oscillations which correspond to nonlinearities observed in the Hall resistance, indicating a potential new quantum Hall system. We show that the high-mobility films can be patterned via conventional lithographic techniques, and we demonstrate modulation of the film conductance using a top-gate electrode. These key elements suggest electronic device applications based on nano-patterned epitaxial graphene (NPEG), with the potential for large-scale integration.

Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics

Atomically thin molybdenum disulfide (MoS2), a member of the transition metal dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) semiconductor with a multitude of interesting properties and promising device applications spanning all realms of electronics and optoelectronics. While possessing inherent advantages over conventional bulk semiconducting materials (such as Si, Ge and III-Vs) in terms of enabling ultra-short channel and, thus, energy efficient field-effect transistors (FETs), the mechanically flexible and transparent nature of MoS2 makes it even more attractive for use in ubiquitous flexible and transparent electronic systems. However, before the fascinating properties of MoS2 can be effectively harnessed and put to good use in practical and commercial applications, several important technological roadblocks pertaining to its contact, doping and mobility (µ) engineering must be overcome. This paper reviews the important technologically relevant properties of semiconducting 2D TMDCs followed by a discussion of the performance projections of, and the major engineering challenges that confront, 2D MoS2-based devices. Finally, this review provides a comprehensive overview of the various engineering solutions employed, thus far, to address the all-important issues of contact resistance (RC), controllable and area-selective doping, and charge carrier mobility enhancement in these devices. Several key experimental and theoretical results are cited to supplement the discussions and provide further insight.

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

Graphene nanoribbons (GNRs) are quasi-one-dimensional subunits of graphene and have open bandgaps in contrast to the zero-bandgap graphene. The high potential of GNRs as a new family of carbon-based semiconductors, e.g. for nanoelectronic and optoelectronic applications, has boosted the research attempts towards fabrication of GNRs. The predominant top-down methods such as lithographical patterning of graphene and unzipping of carbon nanotubes cannot prevent defect formation. In contrast, bottom-up chemical synthesis, starting from tailor-made molecular precursors, can achieve atomically precise GNRs. In this account, we summarize our recent research progress in the bottom-up synthesis of GNRs through three different methods, namely (1) in solution, (2) on-surface under ultrahigh vacuum (UHV) conditions, and (3) on-surface through chemical vapour deposition (CVD). The solution synthesis allows fabrication of long (>600 nm) and liquid-phase-processable GNRs that can also be functionalized at the edges. On the other hand, the on-surface synthesis under UHV enables formation of zigzag GNRs and in situ visualization of their chemical structures by atomic-resolution scanning probe microscopy. While the on-surface synthesis under UHV is typically costly and has limited scalability, the industrially viable CVD method can allow lower-cost production of large GNR films. We compare the three methods in terms of the affordable GNR structures and the resulting control of their electronic and optical properties together with post-processing for device integration. Further, we provide our views on future perspectives in the field of bottom-up GNRs.

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Solution and on-surface synthesis of structurally defined graphene nanoribbons as a new family of semiconductors

Graphene nanoribbons (GNRs) are a family of one-dimensional (1D) materials carved from graphene lattice. GNRs possess high mobility and current carrying capability, sizable bandgap, and versatile electronic properties tailored by the orientations and open edge structures. These unique properties make GNRs promising candidates for prospective electronics applications including nano-sized field-effect transistors (FETs), spintronic devices, and quantum information processing. To fully exploit the potential of GNRs, fundamental understanding of structure-property relationship, precise control of atomic structures and scalable production are the main challenges. In the last several years, significant progress has been made toward atomically precise bottom-up synthesis of GNRs and heterojunctions that provide an ideal platform for functional molecular devices, as well as successful production of semiconducting GNR arrays on insulating substrates potentially useful for large-scale digital circuits. With further development, GNRs can be envisioned as a competitive candidate material in future quantum information sciences (QIS). In this Perspective, we review recent progress in GNR research and identify key challenges and new directions likely to develop in the near future.

Graphene nanoribbons for quantum electronics.

Graphene nanoribbons show unique properties and have attracted a lot of attention in the recent past. Intensive theoretical and experimental studies on such nanostructures at both the fundamental and application-oriented levels have been performed. The present paper discusses the suitability of graphene nanoribbons devices for nanoelectronics and focuses on three specific device types – graphene nanoribbon MOSFETs, side-gate transistors, and three terminal junctions. It is shown that, on the one hand, experimental devices of each type of the three nanoribbon-based structures have been reported, that promising performance of these devices has been demonstrated and/or predicted, and that in part they possess functionalities not attainable with conventional semiconductor devices. On the other hand, it is emphasized that – in spite of the remarkable progress achieved during the past 10 years – graphene nanoribbon devices still face a lot of problems and that their prospects for future applications remain unclear.

https://onlinelibrary.wiley.com/doi/pdf/10.1002/andp.201700033

Graphene Nanoribbons for Electronic Devices

An approach to simulate the steady-state and small-signal behavior of GNR MOSFETs (graphene nanoribbon metal-semiconductor-oxide field-effect transistor) is presented. GNR material parameters and a method to account for the density of states of one-dimensional systems like GNRs are implemented in a commercial device simulator. This modified tool is used to calculate the current-voltage characteristics as well the cutoff frequency fT and the maximum frequency of oscillation fmax of GNR MOSFETs. Exemplarily, we consider 50-nm gate GNR MOSFETs with N = 7 armchair GNR channels and examine two transistor configurations. The first configuration is a simplified MOSFET structure with a single GNR channel as usually studied by other groups. Furthermore, and for the first time in the literature, we study in detail a transistor structure with multiple parallel GNR channels and interribbon gates. It is shown that the calculated fT of GNR MOSFETs is significantly lower than that of GFETs (FET with gapless large-area graphene channel) with comparable gate length due to the mobility degradation in GNRs. On the other hand, GNR MOSFETs show much higher fmax compared to experimental GFETs due the semiconducting nature of the GNR channels and the resulting better saturation of the drain current. Finally, it is shown that the gate control in FETs with multiple parallel GNR channels is improved while the cutoff frequency is degraded compared to single-channel GNR MOSFETs due to parasitic capacitances of the interribbon gates.

Simulation of 50-nm Gate Graphene Nanoribbon Transistors

The scaling behavior of MOSFETs based on two-dimensional (2D) materials is investigated by means of numerical simulation and analytical modeling. Due to their ultimate thinness, 2D channel materials like MoS2 are perfectly suited to push the scaling limits beyond those of silicon. The electrostatic integrity of 2D transistors is governed by the chosen device architecture, substrate material, and gate dielectric, and, despite 2D materials are ultimately thin, by the dielectric properties of the channel. Regarding on-state performance, 2D materials with moderate transport properties like MoS2 become competitive at channel lengths around 5nm, due to the degraded mobility in thin Si bodies.

MOSFET scaling: Impact of two-dimensional channel materials

2D materials (2Ds), in particular the 2Ds beyond graphene, have attracted considerable attention in the transistor community. While rapid progress on 2D transistors has been achieved recently, the prospects of 2D electronics is still under debate. In the present paper we discuss our view of the potential of 2D transistors for digital CMOS and for flexible electronics. We show that 2D MOSFETs show promise for ultimately scaled CMOS due their excellent electrostatic integrity and their ability to suppress source-drain tunneling. Moreover, the 2Ds represent a promising option for radio frequency (RF) flexible electronics since they offer an attractive combination of mechanical (bendability, stretchability), and electrical (reasonable mobility) properties.

2D electronics - opportunities and limitations

Memristors are promising devices for future neuromorphic computing applications. Typically, memristors consist of a vertical metal-insulator-metal stack. Recently memristors using layered transition metal dichalcogenides (TMDCs) for the active device region have attracted much attention. In the present paper, we report on the fabrication of lateral WSe2 and MoS2 memristors and present measured current-voltage (I-V) characteristics of these devices. Moreover, a model for calculating the I-V characteristics of lateral TMDC memristors is presented. We show that the model can correctly reproduce the experimental I-V characteristics of our devices.

Zhansong Geng

Papers

Graphene Nanoribbons for Electronic Devices

Simulation of 50-nm Gate Graphene Nanoribbon Transistors

MOSFET scaling: Impact of two-dimensional channel materials

2D electronics - opportunities and limitations

Lateral 2D TMDC Memristors – Experiment and Modeling