Graphene Nanoribbons for Electronic Devices
Zhansong Geng,Bernd Hähnlein,Ralf Granzner,Manuel Auge,Alexander A. Lebedev,Valery Yu. Davydov,M. Kittler,Jörg Pezoldt,Frank Schwierz +8 more
Reads0
Chats0
TLDR
In this article, the suitability of graphene nanoribbons devices for nanoelectronics was discussed and three specific device types were discussed: MOSFETs, side-gate transistors, and three terminal junctions.Abstract:
Graphene nanoribbons show unique properties and have attracted a lot of attention in the recent past. Intensive theoretical and experimental studies on such nanostructures at both the fundamental and application-oriented levels have been performed. The present paper discusses the suitability of graphene nanoribbons devices for nanoelectronics and focuses on three specific device types – graphene nanoribbon MOSFETs, side-gate transistors, and three terminal junctions. It is shown that, on the one hand, experimental devices of each type of the three nanoribbon-based structures have been reported, that promising performance of these devices has been demonstrated and/or predicted, and that in part they possess functionalities not attainable with conventional semiconductor devices. On the other hand, it is emphasized that – in spite of the remarkable progress achieved during the past 10 years – graphene nanoribbon devices still face a lot of problems and that their prospects for future applications remain unclear.read more
Citations
More filters
Journal ArticleDOI
Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
Claire Berger,Zhimin Song,Tianbo Li,Xuebin Li,Asmerom Ogbazghi,R. Feng,Zhenting Dai,Alexei Marchenkov,Edward H. Conrad,Phillip N. First,Walt A. de Heer +10 more
TL;DR: In this article, an ultrathin epitaxial graphite graphite (NPEG) was grown by thermal decomposition on the (0001) surface of 6H-SiC and characterized by surface-science techniques.
Journal ArticleDOI
Solution and on-surface synthesis of structurally defined graphene nanoribbons as a new family of semiconductors
TL;DR: In this paper, the authors summarize the recent research progress in the bottom-up synthesis of GNRs through three different methods, namely (1) in solution, (2) on-surface under ultrahigh vacuum (UHV) conditions, and (3) onsurface through chemical vapour deposition (CVD).
Journal ArticleDOI
Graphene nanoribbons for quantum electronics.
Haomin Wang,Haomin Wang,Wang Huishan,Wang Huishan,Chuanxu Ma,Lingxiu Chen,Chengxin Jiang,Chengxin Jiang,Chengxin Jiang,Chen Chen,Chen Chen,Xiaoming Xie,An-Ping Li,Xinran Wang +13 more
TL;DR: Graphene nanoribbons (GNRs) are a family of one-dimensional (1D) materials carved from graphene lattice as discussed by the authors, which possess high mobility and current carrying capability, sizable bandgap, and versatile electronic properties tailored by the orientations and open edge structures.
Journal ArticleDOI
Emerging Theory, Materials, and Screening Methods: New Opportunities for Promoting Thermoelectric Performance
Journal ArticleDOI
Materials Science Challenges to Graphene Nanoribbon Electronics.
TL;DR: Graphene nanoribbons (GNRs) have recently emerged as promising candidates for channel materials in future nanoelectronic devices due to their exceptional electronic, thermal, and mechanical properties and chemical inertness.
References
More filters
Journal ArticleDOI
Electric Field Effect in Atomically Thin Carbon Films
Kostya S. Novoselov,Andre K. Geim,Sergey V. Morozov,Da Jiang,Y. Zhang,S. V. Dubonos,Irina V. Grigorieva,A. A. Firsov +7 more
TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
Journal ArticleDOI
Raman spectrum of graphene and graphene layers.
Andrea C. Ferrari,Jannik C. Meyer,Vittorio Scardaci,Cinzia Casiraghi,Michele Lazzeri,Francesco Mauri,S. Piscanec,Da Jiang,K. S. Novoselov,S. Roth,A. K. Geim +10 more
TL;DR: This work shows that graphene's electronic structure is captured in its Raman spectrum that clearly evolves with the number of layers, and allows unambiguous, high-throughput, nondestructive identification of graphene layers, which is critically lacking in this emerging research area.
Journal ArticleDOI
Boron nitride substrates for high-quality graphene electronics
Cory Dean,Andrea Young,Inanc Meric,Changgu Lee,Lei Wang,Sebastian Sorgenfrei,Kenji Watanabe,Takashi Taniguchi,Philip Kim,Kenneth L. Shepard,James Hone +10 more
TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Related Papers (5)
Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors
Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons
Juan Pablo Llinas,Juan Pablo Llinas,Andrew Fairbrother,Gabriela Borin Barin,Wu Shi,Wu Shi,Kyunghoon Lee,Kyunghoon Lee,Shuang Wu,Shuang Wu,Byung Yong Choi,Byung Yong Choi,Rohit Braganza,Rohit Braganza,Jordan Lear,Nicholas Kau,Won-Woo Choi,Chen Chen,Zahra Pedramrazi,Tim Dumslaff,Akimitsu Narita,Xinliang Feng,Klaus Müllen,Felix R. Fischer,Felix R. Fischer,Alex Zettl,Alex Zettl,Pascal Ruffieux,Eli Yablonovitch,Eli Yablonovitch,Michael F. Crommie,Michael F. Crommie,Roman Fasel,Roman Fasel,Jeffrey Bokor,Jeffrey Bokor +35 more