A facile fabrication of lead-free Cs2NaBiI6 double perovskite films for memory device application

With the rapid development of next-generation artificial intelligence technology, research on advanced machine vision has received extensive attention. It is well-known that significant progress has been made in artificial vision systems based on light sensors, but the separate light sensor and memory require additional time for information transfer to realize computation due to the limitation of the von Neumann architecture, which delays the computational speed and hinders large-scale integration. In recent years, the emergence of photoelectric memristors has brought new inspiration to the study of machine vision, which is expected to overcome the above problems. Photoelectric memristors can not only respond directly to light stimuli but also perform temporary memory and real-time processing of visual information and sensory data, providing a promising hardware foundation for the development of artificial vision systems. In this review, the background and related theory of photoelectric memristors and machine vision are first introduced. Then, the research progress of photoelectric memristors and machine vision based on them is reviewed. Finally, the existing problems impeding the progress of machine vision based on photoelectric memristors are summarized, and the future development is predicted. 

Photoelectric Memristor-Based Machine Vision for Artificial Intelligence Applications

Multi-functional switching materials have magical scientific performance, and they are important components of smart devices. Among all kinds of compounds, perovskite is easy to introduce and compatible multiple physical properties....

Multi-functional Hybrid Perovskites with Triple-channel Switches and Optical Properties

The rapid development of artificial intelligence (AI) requires processing vast amounts of complex information, which has accelerated the exploration of neuromorphic computing systems. Artificial neuromorphic synapses based on memristors of organic–inorganic halide perovskites (OHPs) potentially exploit a niche area for brain‐inspired neuromorphic computing, which can be operated as biological synapses to realize signal processing. Here, MAPbI3‐based memristors with reliable resistance states triggered by electric fields or photons are reported. A model for resistive switching (RS) originated from conductive filaments (CFs) based on intrinsic defect migrations is proposed. Importantly, the unique photoresponsive characteristic provides the opportunity to enhance the RS through multifunctional photo‐coupling. Enhanced by monochromatic illumination, memristors exhibit RS with remarkable characteristics such as ultralow operating voltage, high ON/OFF ratio (4.3 × 103), small HRS/LRS variation coefficient (29.91%/13.82%), stable endurance (104 cycles), long retention time (105 s), and ultralow power consumption. Moreover, photons can modulate the nonvolatile devices to maintain a great ON/OFF ratio over 9 days under ambient conditions without any encapsulation. The research presents plausible applications of memristors in coupling ions, electrons, and photons, thus contributing to applicability for multifunctional optoelectronics and optogenetics tunable neuromorphic systems.

Photo‐Enhanced Resistive Switching Effect in High‐Performance MAPbI3 Memristors

https://doi.org/10.1080/14686996.2022.2162323

A review of memristor: material and structure design, device performance, applications and prospects

Optical and oxide modification of CsFAMAPbIBr memristor achieving low power consumption

Organic-inorganic halide perovskites (OHPs) have been proven to possess unique optical and electrical properties, and achieved more extensive application as excellent materials for memristors in recent years. Based on the traditional OHP-based memristors, the intermediate layer of the memristor was prepared using yttrium oxide (Y2O3)/OHP stacking structure in this manuscript. The potential barrier between Y2O3and perovskite is relatively high (ΔEC = 2.13 eV) which leads to comparatively low current of the memristor, thus the power consumption can be reduced. Besides, by changing the external light conditions, one can realize sharp or slow switch between high resistance state (HRS) and low resistance state (LRS), so as to meet the requirement of multilevel data storage, which indicates its promising application prospect in information storage and biological simulation. In addition, based on characteristics of photoelectric coupling, the Y2O3/OHP memristor can also achieve the advantage of adjustable threshold voltage. The transition of HRS and LRS can be realized by changing the illumination condition at any voltage, which means the set and reset voltage are not fixed, so that the memristor with adjustable threshold voltage can adapt to various working conditions.

https://iopscience.iop.org/article/10.1088/1361-6528/ac0667/pdf

Low power consumption photoelectric coupling perovskite memristor with adjustable threshold voltage

Orbital angular momentum (OAM) communication has been envisioned as a potential technology to increase capacity for 6G communication. In this letter, we present an OAM channel measurement campaign in an indoor small office at 30 GHz. Furthermore, the path loss is investigated and modeled by close-in (CI) model and floating-intercept (FI) model. It is found that the FI model fits the measured path loss better than the CI model, and the CI model may no longer appropriate for OAM wave propagation when the receiver is in the hollow radiation area of the OAM beam. Also, we investigate the K-factor and the results indicate that the divergence angle leads to more complicated multipath propagation characteristics of the wireless channel. Moreover, root mean square delay spread reveals that channel performance can be effectively improved when the receiver is within the direct radiation range of the OAM antenna. Generally, this work can be considered as a foundation of understanding and building channel models of indoor OAM communication systems.

Propagation Measurement and Channel Characteristics of Small Office OAM Communication at 30 GHz

In this paper, an oribital angular momentum (wave channel measurement is conducted in an indoor scenario, three cases are designed to investigate the pa of the vortex wave. The results indicate that floating in (FI) model can fit better than close-in (CI) model for me path loss. In addition, the divergence angle of vortex wave to less received power in the line-of-sight (LOS) environn

Zhejia Zhang

Papers

Optical and oxide modification of CsFAMAPbIBr memristor achieving low power consumption

Low power consumption photoelectric coupling perovskite memristor with adjustable threshold voltage

Propagation Measurement and Channel Characteristics of Small Office OAM Communication at 30 GHz

Path Loss of OAM Wave in Indoor Office Scenario at Millimeter-wave Band