Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.

Methods and systems for utilizing design data in combination with inspection data

A mask defect inspecting method comprises preparing detection sensitivities of defects on a plurality of portions of a mask pattern on a photomask, the detection sensitivities being determined according to influences of the defects upon a wafer, and inspecting defects on the plurality of portions based on the detection sensitivities.

Mask defect inspecting method, semiconductor device manufacturing method, mask defect inspecting apparatus, defect influence map generating method, and computer program product

In a pattern-defect inspection method for inspecting a defect in an inspection pattern by comparing an image of the inspection pattern with an image of a reference pattern, inspection sensitivity is adjusted in accordance with the number of corner portion and so on of the reference pattern.

Method for inspecting pattern defect occured on patterns formed on a substrate

PROBLEM TO BE SOLVED: To purovide a method for screening substrates for photomasks that suppresses increase of a manufacturing cost of the photomasks having birefringence, and to provide a method for manufacturing the photomask, and a method for manufacturing a semiconductor device SOLUTION: The method for screening the substrates for the photomasks includes a step for dividing a chip region to be arranged on the substrate for the photomask into a management pattern region to be arranged with an element pattern which varies its shape by the birefringence of the substrate for the photomask and a region except for the pattern region concerning a specific transfer pattern layer, a step for setting a standard value of the birefringence of the region to be arranged with the management pattern region on the substrate for the photomask, a step for inspecting the respective birefringences of substrate candidates for a plurality of the photomasks, and a step for screening the substrates for the photomasks satisfying the standard value of the birefringence as the substrate for the photomask of the specific transfer pattern layer COPYRIGHT: (C)2007,JPO&INPIT

Method for screening substrate for photomask, method for manufacturing photomask, and method for manufacturing semiconductor device

In a conventional pattern defect inspection of a complicated shape pattern formed on a reticle or a semiconductor wafer, a plenty of pseudo-defects (actually not defects) have been contained in what has been recognized as defects. It is necessary to reduce the number of pseudo-defects and significantly reduce the time required for the defect inspection. In a pattern defect inspection method in which an image of pattern to be inspected is compared to an image of a reference pattern so as to detect a defect of the pattern to be inspected, the inspection sensitivity is adjusted according to the pattern shape in the reference pattern.

Pattern defect inspection method and semiconductor device manufacturing method

PROBLEM TO BE SOLVED: To provide a defect inspecting method by which necessary and sufficient defect inspection advantageous in time and cost is performed by performing the inspection while dividing a mask defect into an area where the influence of a mask defect on the operation is large and an area where the influence is small when inspection sensitivity is adjusted. SOLUTION: According to the influence of the defect on a photomask 10 on the operation of the device, inspection areas (e.g. areas A and B) on the photomask are divided into two or more areas and inspection sensitivity is set for each divided inspection area. According to the patterns A and B of the photomask 10, defect inspection is performed with desired inspection sensitivity to enable necessary and sufficient defect inspection. Further, defect inspection data wherein the defect inspections ensitivity and defect inspection positions are defined for the specific pattern of the mask having a plurality of inspection areas are prepared and photomask inspection is performed according to the data. COPYRIGHT: (C)2002,JPO

Method and device for defect inspection of photomask and recording medium

PROBLEM TO BE SOLVED: To provide a pattern information generating method in which suitable pattern information can be generated. SOLUTION: The pattern information generating method includes a stage S11 of acquiring an image of a mask pattern; a stage S13 of matching the image of the mask pattern with a reference pattern; a stage S14 of setting reference points at a contour of the reference pattern at set intervals corresponding to distances from a vertex of the reference pattern; and a stage S15 of outputting contour points of the image of the mask pattern to positions predefined by the reference points. COPYRIGHT: (C)2009,JPO&INPIT

Pattern information generating method

PROBLEM TO BE SOLVED: To provide a pattern evaluation method by which the comparison of a predicted wafer pattern with a desired wafer pattern can be performed more exactly while also including a position and it becomes possible to more exactly evaluate a mask pattern, and a pattern evaluation apparatus. SOLUTION: The pattern evaluation method for evaluating the pattern is applied to evaluate a mask pattern formed in an exposure mask. The method includes: generating desired wafer pattern data 15 corresponding to the evaluation position of the mask pattern; generating outline-data 9 of the mask pattern from the image of the mask pattern; searching position offset 13 of mask pattern data 2 and the mask pattern outline data 9; performing lithography simulation from the mask pattern outline data 9; generating predicted wafer pattern data 11 in the case when the mask pattern is transferred onto a wafer; correcting a positional error in wafer pattern data 11, 15 on the basis of the position offset 13; and comparing the wafer pattern data 11, 15 while the positional error is corrected. COPYRIGHT: (C)2008,JPO&INPIT

Pattern evaluation method and apparatus, and pattern evaluation program

PROBLEM TO BE SOLVED: To provide a mask inspection device and a mask inspection method which are capable of inspecting a mask of a fine pattern with high sensitivity.SOLUTION: A mask inspection device 110 includes a depressurized container 10, a holding unit 15, a light irradiation unit 20, a detection unit 50, an electrode 30, and a control unit 60. The holding unit 15 is provided in the depressurized container 10 and holds a mask 70. The light irradiation unit 20 irradiates a principal surface of the mask 70 held by the holding unit 15, with light. The detection unit 50 is provided in the depressurized container 10 and detects electrons generated by light irradiation to the principal surface of the mask 70. The electrode 30 is provided between the holding unit 15 and the detection unit 50 and guides the electrons in a direction from the holding unit 15 to the detection unit 50. The control unit 60 compares the detection result of the electrons detected by the detection unit 50, with a reference value.

真司山口

Papers

Method and device for defect inspection of photomask and recording medium

Pattern information generating method

Pattern evaluation method and apparatus, and pattern evaluation program

Mask inspection device and mask inspection method

真司 山口

Papers

Method and device for defect inspection of photomask and recording medium

Pattern information generating method

Pattern evaluation method and apparatus, and pattern evaluation program

Mask inspection device and mask inspection method

真司山口