Z
Zheru Qiu
Researcher at University of Science and Technology of China
Publications - 14
Citations - 113
Zheru Qiu is an academic researcher from University of Science and Technology of China. The author has contributed to research in topics: Photon & Photonics. The author has an hindex of 2, co-authored 2 publications receiving 9 citations.
Papers
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Journal ArticleDOI
A photonic integrated circuit–based erbium-doped amplifier
Yang Liu,Zheru Qiu,Xinru Ji,Anton Lukashchuk,Jijun He,Johann Riemensberger,Martin Hafermann,Rui Ning Wang,Junqiu Liu,Carsten Ronning,Tobias J. Kippenberg +10 more
TL;DR: Kim et al. as discussed by the authors demonstrated a photonic integrated circuit-based erbium-doped optical amplifier reaching 145 milliwatts of output power and more than 30 decibels of small-signal gain.
Journal ArticleDOI
Cavity-mediated electron-photon pairs
Armin Feist,Guanhao Huang,Germaine Arend,Y. Yang,Jans Henke,Arslan S. Raja,F. J. S. Kappert,R. Wang,H. Lourencco-Martins,Zheru Qiu,J. Liu,Ofer Kfir,Tobias J. Kippenberg,Claus Ropers +13 more
TL;DR: In this article , the phase-matched interaction of free electrons with the evanescent vacuum field of a photonic chip-based optical microresonator was demonstrated for noise-suppressed optical mode imaging.
Journal ArticleDOI
Herriott-cavity-assisted all-optical atomic vector magnetometer
TL;DR: In this article, an all-optical atomic vector magnetometer using dual Bell-Bloom optical pumping beams in a Rb vapor cell was presented. But the magnetometer performance was limited to a magnetic field ranging from 100 mG to 500 mG.
Journal ArticleDOI
Interactions between nonresonant rf fields and atoms with strong spin-exchange collisions
TL;DR: In this paper, the interactions between oscillating nonresonant rf fields and atoms with strong spin-exchange collisions in the presence of a weak dc magnetic field were studied, and the atomic Larmor precession frequency showed a new functional form to the rf field parameters when the spin exchange collision rate is tuned.
Proceedings ArticleDOI
Photonic integrated erbium-doped silicon nitride amplifiers with intense net gain
Yang Liu,Zheru Qiu,Xinru Ji,Jijun He,Johann Riemensberger,Arslan S. Raja,Rui Ning Wang,Junqiu Liu,Tobias J. Kippenberg +8 more
TL;DR: In this article , photonic integrated erbium-implanted SiN-N 3 N4> amplifiers were demonstrated, achieving a record-high 26 dB on-chip net gain and saturation output power exceeding 25 mW.