Zhibin Zhou

TL;DR: In this paper, the microstructure and electrical properties of indium oxide and tin oxide thin films are analyzed by XRD, AFM, and van der Pauw fourpoint-probe technique and the results discussed.

TL;DR: In this paper, ITO thin films were prepared by bias magnetron rf sputtering technique at substrate temperature of 180°C and low substrate target distance for future a-Si:H/c-Si heterojunction (HJ) solar cells application.

TL;DR: In this paper, the intrinsic nanocrystalline silicon thin films deposited by radio frequency (RF) sputtering on p-type c-Si substrates at low temperature (fixed at 95 °C) were examined by atomic force microscopy (AFM), X-ray diffraction (XRD) and laser Raman spectrometer allowing the determination of the grain size and the crystalline volume fraction X c.

TL;DR: In this article, an n-type nc-Si:H/p-type c-Si heterojunction solar cell, which has an open circuit voltage (Voc) of 370 MV and a short-circuit current intensity (Jsc) of 6.5 MV, was produced on the nanocrystalline silicon thin film.

TL;DR: In this paper, the effects of diborane (B 2 H 6 ) doping ratio on the microstructural and optoelectrical properties of the p-type nc-Si:H thin films grown by hot-wire chemical vapor deposition (HWCVD) at low substrate temperature of 200