Z
Zhijuan Xu
Researcher at Zhejiang University
Publications - 25
Citations - 985
Zhijuan Xu is an academic researcher from Zhejiang University. The author has contributed to research in topics: Graphene & Heterojunction. The author has an hindex of 12, co-authored 25 publications receiving 793 citations.
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Journal ArticleDOI
18.5% efficient graphene/GaAs van der Waals heterostructure solar cell
Xiaoqiang Li,Wenchao Chen,Shengjiao Zhang,Zhiqian Wu,Peng Wang,Zhijuan Xu,Hongsheng Chen,Wen-Yan Yin,Huikai Zhong,Shisheng Lin +9 more
TL;DR: In this article, a gated graphene/semiconductor van der Waals Schottky diode was used for high efficient solar cell with power conversion efficiency of 18.5% and open circuit voltage of 0.96V.
Journal ArticleDOI
Monolayer MoS2/GaAs heterostructure self-driven photodetector with extremely high detectivity
TL;DR: In this paper, the authors used MoS 2 /GaAs heterojunction as a self-driven photodetector with wide response band width from ultraviolet to visible light, which exhibits high sensitivity to the incident light of 635 nm.
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Graphene/h-BN/GaAs sandwich diode as solar cell and photodetector.
Xiaoqiang Li,Shisheng Lin,Xing Lin,Zhijuan Xu,Peng Wang,Shengjiao Zhang,Huikai Zhong,Wenli Xu,Zhiqian Wu,Wei Fang +9 more
TL;DR: A sandwich diode for solar cells and photodetectors is designed through inserting 2D hexagonal boron nitride (h-BN) into graphene/GaAs heterostructure to suppress the static charge transfer.
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Interface designed MoS2/GaAs heterostructure solar cell with sandwich stacked hexagonal boron nitride
Shisheng Lin,Xiaoqiang Li,Peng Wang,Zhijuan Xu,Shengjiao Zhang,Huikai Zhong,Zhiqian Wu,Wenli Xu,Hongsheng Chen +8 more
TL;DR: Herein, hexagonal boron nitride (h-BN) is introduced into MoS2/GaAs heterostructure to suppress the static charge transfer, and the obtained MoS 2/ h-BN/ GaAs solar cell exhibits an improved power conversion efficiency of 5.42%.
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Opening the band gap of graphene through silicon doping for the improved performance of graphene/GaAs heterojunction solar cells
Shucheng Zhang,Shisheng Lin,Xiao Li,Xiaoyi Liu,HengAn Wu,Wendao Xu,Peng Wang,Zhiqian Wu,Huikai Zhong,Zhijuan Xu +9 more
TL;DR: The results suggest that silicon doping can effectively engineer the band gap of monolayered graphene and SiG has great potential in optoelectronic device applications.