An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

A liquid crystal display (LCD) includes an LCD panel, a scan driver, a timing controller and a data driver The LCD panel includes first and second pixel rows The timing controller determines a correction voltage index according to an absolute difference between an average of original pixel voltages corresponding to original pixel data of all pixels of the first pixel row, and an average of original pixel voltages corresponding to original pixel data of all pixels of the second pixel row, determines a correction voltage according to the correction voltage index, determines an adjusted pixel voltage in a target pixel according to an original pixel voltage of the target pixel in the second pixel row and the correction voltage, and outputs adjusted pixel data corresponding to the adjusted pixel voltage The data driver outputs the adjusted pixel voltage to the target pixel according to the adjusted pixel data

Liquid crystal display and driving method thereof

The invention is to provide a liquid crystal composition that satisfies at least one of characteristics such as a high maximum temperature of a nematic phase, a low minimum temperature of a nematic phase, a small viscosity, a large optical anisotropy, a large positive dielectric anisotropy, a large specific resistance, a large elastic coefficient, a high stability to ultraviolet light and heat, or that is suitably balanced between at least two of the characteristics. As the liquid crystal display device containing the compositions is to provide an AM device that has a short response time, a large voltage holding ratio, a large contrast ratio, a long service life and so forth, thus it can be used for the liquid crystal projector, liquid crystal television and so forth.

Liquid crystal composition and liquid crystal display device

Disclosed are: a liquid crystal composition, which satisfies at least one property selected from a high upper-limit temperature in a nematic phase, a low lower-limit temperature in a nematic phase, a low viscosity, high optical anisotropy, high dielectric anisotropy, a high specific resistivity, high stability to ultraviolet ray, high stability to heat and the like, or which has an adequate balance between at least two properties selected from the above-mentioned properties; and an AM element having a short response time, a high voltage holding ratio, a high contrast ratio, a long service life and the like. Specifically disclosed are: a liquid crystal composition which comprises a specific pentacyclic compound having high optical anisotropy and high dielectric anisotropy as the first component, a specific compound having a low viscosity as the second component, and a specific tetracyclic compound having a high upper-limit temperature as the third component, and which has a nematic phase; and a liquid crystal display element comprising the composition.

Liquid crystal composition and liquid crystal display element

PROBLEM TO BE SOLVED: To provide a method of etching an ITO film, which is capable of preventing an electrode wiring material from being corroded and etching the ITO film at a high speed, and a method of exfoliating a regist formed on a substrate surface, without leaving residues behind SOLUTION: In this method, a resist exfoliation chamber 11 for exfoliating a resist after an etching processing has been finished, is evacuated down to a predetermined pressure, and a gas containing Fe atom is mixed with O2 gas so as to be provided in a ratio in a range of 05 to 15%, and furthermore the mixed gas is introduced into the chamber 11 as an ashing gas and is set to a predetermined pressure The ashing gas in the chamber 11 is irradiated with microwaves to be made into a plasma, and active species produced thereby ashes the resist Thereafter, a resist residue left behind on the surface of the substrate 23 is cleaned

Plasma-processing method

PROBLEM TO BE SOLVED: To enable the use of an electrode wiring consisting of a low-resistance alloy and to improve the aperture ratio by making the width of the electrode wiring minute without deteriorating the operation and function, by covering the contact surfaces of respective electrode bodies and other layers with films consisting of a specified material. SOLUTION: The gate electrodes 9 are formed of the electrode bodies 9a which consist of Al or Al alloy or Cu or Cu alloy and the films 9b which consist of at least one kind of the materials selected from TiN, MoTa, MoW and cover at least the contact surfaces existing between the electrode bodies 9a and channel parts 18 among the surfaces at which the electrode bodies 9a come into contact with first gate insulating layers 10. The source electrodes 15 (drain electrodes 16) are formed of the electrode bodies 15a (16a) which consist of Al or an Al alloy or Cu or a Cu alloy and the films 15b (16b) which consist of at least one kind of the materials selected from among TiN, MoTa, MoW and cover the contact surfaces (contact surfaces and pixel electrodes 7) with at least the high concn. silicon active layers 14 of the electrode bodies 15a (16a). COPYRIGHT: (C)1998,JPO

Liquid crystal display element

PURPOSE: To set the selective ratio of a silicon nitride film to a silicon substrate or a silicon oxide film at a relatively high value in the case of removing the silicon nitride film on the silicon substrate or the silicon oxide film by selective etching by using CDE. CONSTITUTION: In the case of removing a part of or the whole silicon nitride film formed on a silicon substrate or a silicon oxide film, mixed gas, which is composed of a gas containing fluorine, oxygen gas and a gas containing hydrogen atoms, is introduced into a discharge part 2 to generate plasma, and only the radical of the plasma active species is introduced into a process chamber 5 wherein the silicon substrate is stored. Thus, the silicon nitride film on the silicon substrate is selectively removed by etching.

忠新村

Papers

Plasma-processing method

Liquid crystal display element

Method and device for etching silicon nitride film

忠 新村

Papers

Plasma-processing method

Liquid crystal display element

Method and device for etching silicon nitride film

忠新村