Patent
Method and device for etching silicon nitride film
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TLDR
In this article, the selective ratio of a silicon nitride film to a silicon substrate or a silicon oxide film at a relatively high value was set in the case of removing a part of or the whole silicon nitric film formed on a silicon substrategies or silicon oxide films by selective etching.Abstract:
PURPOSE: To set the selective ratio of a silicon nitride film to a silicon substrate or a silicon oxide film at a relatively high value in the case of removing the silicon nitride film on the silicon substrate or the silicon oxide film by selective etching by using CDE. CONSTITUTION: In the case of removing a part of or the whole silicon nitride film formed on a silicon substrate or a silicon oxide film, mixed gas, which is composed of a gas containing fluorine, oxygen gas and a gas containing hydrogen atoms, is introduced into a discharge part 2 to generate plasma, and only the radical of the plasma active species is introduced into a process chamber 5 wherein the silicon substrate is stored. Thus, the silicon nitride film on the silicon substrate is selectively removed by etching.read more
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