There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Weyl and Dirac semimetals are three-dimensional phases of matter with gapless electronic excitations that are protected by topology and symmetry. As three-dimensional analogs of graphene, they have generated much recent interest. Deep connections exist with particle physics models of relativistic chiral fermions, and, despite their gaplessness, to solid-state topological and Chern insulators. Their characteristic electronic properties lead to protected surface states and novel responses to applied electric and magnetic fields. The theoretical foundations of these phases, their proposed realizations in solid-state systems, and recent experiments on candidate materials as well as their relation to other states of matter are reviewed.

Weyl and Dirac semimetals in three-dimensional solids

1. Setting the Scope of the Challenge 6474 1.1. The Need for Solar Energy Supply and Storage 6474 1.2. An Imperative for Discovery Research 6477 1.3. Scope of Review 6478 2. Large-Scale Centralized Energy Storage 6478 2.1. Pumped Hydroelectric Energy Storage (PHES) 6479 2.2. Compressed Air Energy Storage (CAES) 6480 3. Smaller Scale Grid and Distributed Energy Storage 6481 3.1. Flywheel Energy Storage (FES) 6481 3.2. Superconducting Magnetic Energy Storage 6482 4. Chemical Energy Storage: Electrochemical 6482 4.1. Batteries 6482 4.1.1. Lead-Acid Batteries 6483 4.1.2. Alkaline Batteries 6484 4.1.3. Lithium-Ion Batteries 6484 4.1.4. High-Temperature Sodium Batteries 6484 4.1.5. Liquid Flow Batteries 6485 4.1.6. Metal-Air Batteries 6485 4.2. Capacitors 6485 5. Chemical Energy Storage: Solar Fuels 6486 5.1. Solar Fuels in Nature 6486 5.2. Artificial Photosynthesis and General Considerations of Water Splitting 6486

Solar Energy Supply and Storage for the Legacy and Nonlegacy Worlds

日本物理学会誌及びJournal of the Physical Society of Japanの月刊について

Nanowires of two-dimensional (2D) crystals of type-II superconductor ${\mathrm{NbSe}}_{2}$ prepared by electron-beam lithography were studied, focusing on the effect of the motion of Abrikosov vortices. We present magnetoresistance measurements on these nanowires and show features related to vortex crossing, trapping, and pinning. The vortex crossing rate was found to vary nonmonotonically with the applied field, which results in nonmonotonic magnetoresistance variations in agreement with theoretical calculations in the London approximation. Above the lower critical field ${H}_{c1}$ the crossing rate is also influenced by vortices trapped by sample boundaries or pinning centers, leading to sample-specific magnetoresistance patterns. We show that the local pinning potential can be modified by intentionally introducing surface adsorbates, making the magnetoresistance pattern a ``magnetofingerprint'' of the sample-specific configuration of vortex pinning centers in a 2D crystal superconducting nanowire.

Vortex crossing, trapping, and pinning in superconducting nanowires of a NbSe 2 two-dimensional crystal

We propose a method of constructing the separability criteria for multipartite quantum states on the basis of entanglement witnesses. The entanglement witnesses are obtained by finding the maximal expectation values of Hermitian operators and then optimizing over all possible Hermitian operators. We derive a set of tripartite separability criteria for the four-qubit Greenberger--Horne--Zeilinger (GHZ) diagonal states. The derived criterion set contains four criteria that are necessary and sufficient for the tripartite separability of the highly symmetric four-qubit GHZ diagonal states; the criteria completely account for the numerically obtained boundaries of the tripartite separable state set. One of the criteria is just the tripartite separability criterion of the four-qubit generalized Werner states.

Precise detection of multipartite entanglement in four-qubit Greenberger--Horne--Zeilinger diagonal states

Metal precursor with bi-layer indium for Cu(In,Ga)Se2 thin film preparation

We report point-contact Andreev reflection spectroscopy studies on possible topological superconductor candidates Cl- (Br-) doped (${\mathrm{PbSe})}_{1.12}({\mathrm{TaSe}}_{2})$ with superconducting transition temperature ${T}_{c}\ensuremath{\sim}$ 1.2 K. A common double-peak feature is observed for the conductance curves at low temperature in the absence of a zero-bias conductance peak. We analyze conductance curves with the Blonder-Tinkham-Klapwijk model and the extracted superconducting gap follows a typical Bardeen-Cooper-Schrieffer temperature- and field-dependent behavior, with $2{\mathrm{\ensuremath{\Delta}}}_{0}/{k}_{B}{T}_{c}\ensuremath{\approx}3.7$ and 3.8 for Cl and Br doping, respectively. Our results strongly suggest that both Cl- and Br-doped $({\mathrm{PbSe})}_{1.12}({\mathrm{TaSe}}_{2})$ are fully gapped superconductors in an intermediate-coupling regime.

Point-contact Andreev reflection spectroscopy on the misfit phase superconductors ( PbSe ) 1.12 ( TaSe 2 ) doped with Cl or Br

There is an anomalous broad hump in the normal state resistivity in hole-type 1111 phase FeAs-based superconductors and its origin is an open issue. We study the effect of Zn doping on this anomaly in order to determine whether it is associated with the residual structural/antiferromagnetic (AFM) phase transition as in the parent compounds. A series of Zn doped Pr0.8Sr0.2FeAsO samples are prepared and their resistivity, magnetoresistance, Hall effect and specific heat are measured. Zn doping should not introduce extra charge carriers, and instead it can suppress the structural/AFM transition efficiently in the parent LaFeAsO system. The hump in resistivity remains unchanged with 6% Zn doping in Pr0.8Sr0.2FeAsO. The measurements of magnetoresistance reveal that the magnetoresistance is negligible in the Zn doped Pr0.8Sr0.2FeAsO samples, in contrast to the large positive magnetoresistance below the temperature of structure/AFM phase transition in the parent compound PrFeAsO. The results indicate that the anomalous broad hump in resistivity does not originate from the structural/AFM transition. The Hall effect and specific heat data are also consistent with this conclusion.

Zhu-An Xu

Papers

Vortex crossing, trapping, and pinning in superconducting nanowires of a NbSe 2 two-dimensional crystal

Precise detection of multipartite entanglement in four-qubit Greenberger--Horne--Zeilinger diagonal states

Metal precursor with bi-layer indium for Cu(In,Ga)Se2 thin film preparation

Point-contact Andreev reflection spectroscopy on the misfit phase superconductors ( PbSe ) 1.12 ( TaSe 2 ) doped with Cl or Br

Effect of Zn doping in hole-type 1111 phase (Pr, Sr)FeAsO.