Energy storage performance of Bi0.5Na0.5TiO3-based relaxor ferroelectric ceramics with superior temperature stability under low electric fields

Electrical energy storage systems (EESSs) with high energy density and power density are essential for the effective miniaturization of future electronic devices. Among different EESSs available in the market, dielectric capacitors relying on swift electronic and ionic polarization-based mechanisms to store and deliver energy already demonstrate high power densities. However, different intrinsic and extrinsic contributions to energy dissipations prevent ceramic-based dielectric capacitors from reaching high recoverable energy density levels. Interestingly, relaxor ferroelectric-based dielectric capacitors, because of their low remnant polarization, show relatively high energy density and thus display great potential for applications requiring high energy density properties. In this study, some of the main strategies to improve the energy density properties of perovskite lead-free relaxor systems are reviewed, including (i) chemical modification at different crystallographic sites, (ii) chemical additives that do not target lattice sites, and (iii) novel processing approaches dedicated to bulk ceramics, thick and thin films, respectively. Recent advancements are summarized concerning the search for relaxor materials with superior energy density properties and the appropriate choice of both composition and processing routes to match various applications' needs. Finally, future trends in computationally-aided materials design are presented.

https://www.mdpi.com/1996-1944/13/24/5742/pdf

Strategies to Improve the Energy Storage Properties of Perovskite Lead-Free Relaxor Ferroelectrics: A Review

(Ba, Sr)TiO3/polymer dielectric composites–progress and perspective

Enhanced energy storage performance of 0.88(0.65Bi0.5Na0.5TiO3-0.35SrTiO3)-0.12Bi(Mg0.5Hf0.5)O3 lead-free relaxor ceramic by composition design strategy

BaTiO3-based ferroelectrics have been extensively studied due to their large dielectric constants and a high saturated polarization, which have the potential to store or supply electricity of very high energy and power densities. In order to further improve the energy efficiency η and the recyclable energy density Wrec, an A, B-site co-doped (Ba0.95,Sr0.05)(Zr0.2,Ti0.8)O3 ceramic target was used for sputter deposition of film capacitor structures on Si. This film composition reduces the remnant polarization Pr, while the choice of a low-temperature, templated sputtering process facilitates the formation of high-density arrays of columnar nanograins (average diameter d ∼20 nm) and grain boundary dead layers. This self-assembled nanostructure further delays the saturation of the electric polarization, leading to a high energy density Wrec of ∼148 J/cm3 and a high energy efficiency η of ∼90%. Moreover, the (Ba0.95,Sr0.05)(Zr0.2,Ti0.8)O3 film capacitors retain their high energy storage performance in a broad range of working temperature (-175-300 °C) and operating frequency (1 Hz-20 kHz). They are also fatigue-free after up to 2 × 109 switching cycles. Our work provides a new method and a cost-effective processing route for the creation and integration of high-performance dielectric capacitors for energy storage applications.

High Energy Performance Ferroelectric (Ba,Sr)(Zr,Ti)O3 Film Capacitors Integrated on Si at 400 °C.

The lead-free Ba0.53Sr0.47TiO3 (BST) thin films buffered with La0.67Sr0.33MnO3 (LSMO) bottom electrode of different thicknesses were fabricated by pulsed laser deposition method on a (001) SrTiO3 substrate. It was found that the roughness of electrode decreases and substrate stress relaxes gradually with the increase of LSMO thickness, which is beneficial for weakening local high electric field and achieving higher Eb. Therefore, the recoverable energy density (Wrec) of BST films can be greatly improved up to 67.3 %, that is, from 30.6 J/cm3 for the LSMO thickness of 30 nm up to 51.2 J/cm3 for the LSMO thickness of 140 nm after optimizing the LSMO thickness. Furthermore, the thin film capacitor with a 140 nm LSMO bottom electrode shows an outstanding thermal stability from 20 °C to 160 °C and superior fatigue resistance after 108 electrical cycles with only a slightly decrease of Wrec below 1.6 % and 3.7 %, respectively. Our work demonstrates that optimizing bottom electrodes thickness is a promising way for enhancing energy storage properties of thin-film capacitors.

Zijun Ren

Papers

Remarkably enhanced energy storage properties of lead-free Ba0.53Sr0.47TiO3 thin films capacitors by optimizing bottom electrode thickness