P
Peng Shi
Researcher at Xi'an Jiaotong University
Publications - 182
Citations - 2502
Peng Shi is an academic researcher from Xi'an Jiaotong University. The author has contributed to research in topics: Dielectric & Thin film. The author has an hindex of 20, co-authored 168 publications receiving 1483 citations.
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Journal ArticleDOI
Energy storage performance of Bi0.5Na0.5TiO3-based relaxor ferroelectric ceramics with superior temperature stability under low electric fields
Ruirui Kang,Zepeng Wang,Xiaojie Lou,Wenyuan Liu,Peng Shi,Xiaopei Zhu,Xudong Guo,Siyi Li,Haonan Sun,Lixue Zhang,Qinzhao Sun +10 more
TL;DR: In this article, the authors designed a comprehensive strategy to synthesize lead-free (Bi1/2Na 1/2)1−xSrxTi0.02O3 (BNT-xST-2FN, x = 0.30, 0.35, 040 and 0.45) ceramics via traditional solid-state method.
Journal ArticleDOI
High pyroelectricity in lead-free 0.5Ba(Zr 0.2 Ti 0.8 )O 3 -0.5(Ba 0.7 Ca 0.3 )TiO 3 ceramics
Shanshan Yao,Wei Ren,Hongfen Ji,Xiaoqing Wu,Peng Shi,Dezhen Xue,Xiaobing Ren,Zuo-Guang Ye,Zuo-Guang Ye +8 more
TL;DR: In this article, the pyroelectric coefficient of lead-free 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 (BZT-50BCT) ceramics was reported.
Journal ArticleDOI
Enhanced ferroelectric properties in Mn-doped K0.5Na0.5NbO3 thin films derived from chemical solution deposition
TL;DR: In this paper, the leakage current density of Mn-doped K0.5NbO3 (KNN) thin films is shown to be about 3×10−6'A/cm2 at an electric field of 50 kV/cm, which is 104 times lower than that of the undoped film.
Journal ArticleDOI
Large energy storage properties of lead-free (1-x)(0.72Bi0.5Na0.5TiO3-0.28SrTiO3)-xBiAlO3 ceramics at broad temperature range
Peng Shi,Linguang Zhu,Weiwei Gao,Zhonghai Yu,Xiaojie Lou,Xiangjian Wang,Zhimao Yang,Sen Yang +7 more
TL;DR: The structural, dielectric and energy storage properties of the lead-free ceramics were discussed in this article. But they did not specify the dielectrics of the ceramic materials.
Journal ArticleDOI
Toward a Reliable Synaptic Simulation Using Al-Doped HfO2 RRAM.
Sourav Roy,Gang Niu,Qiang Wang,Yankun Wang,Yijun Zhang,Wu Heping,Shijie Zhai,Peng Shi,Sannian Song,Zhitang Song,Zuo-Guang Ye,Christian Wenger,Thomas Schroeder,Ya-Hong Xie,Xiangjian Meng,Wenbo Luo,Wei Ren +16 more
TL;DR: The achievement of reliable HfO2-based RRAM devices for synaptic simulation by performing the Al doping and the post-deposition annealing (PDA) and the synapse features including potentiation, depression and spike time dependent plasticity (STDP) were successfully achieved.