Radiation detection, using materials to convert high-energy photons to low-energy photons (X-ray imaging) or electrical charges (X-ray detector), has become essential for a wide range of applicatio

Metal Halide Perovskites for X-ray Imaging Scintillators and Detectors

Summary Metal halide perovskites (MHP) have demonstrated excellent X-ray detection performance, thanks to their compelling properties including large mobility-lifetime product, strong X-ray absorption, and easy synthesis, etc. The latest progress and future perspective of MHP-based X-ray detection and imaging are reviewed herein. The fundamental knowledge of X-ray interaction with materials and the characteristics of direct and indirect (via scintillators) X-ray detection is first discussed. We then introduce the methods for scalable fabrication of MHP and summarize their recent device performance. We further present the integration of MHP detectors with readout integrated circuits and the associated performance metrics for flat panel detector (FPD). We also briefly talk about ways to minimize cross-talk and increase spatial resolution in FPDs. Last, we provide some cautions to evaluate the detector performance and some suggestions to further improve the performance. We hope this paper can help readers understand the status and future challenges for perovskite X-ray detectors.

Metal Halide Perovskites for X-Ray Detection and Imaging

Halide perovskites for high-performance X-ray detector

From Pb to Bi: A Promising Family of Pb‐Free Optoelectronic Materials and Devices

Controlled Cooling for Synthesis of Cs2AgBiBr6 Single Crystals and Its Application for X-Ray Detection

Self-Powered X-Ray Detector Based on All-Inorganic Perovskite Thick Film with High Sensitivity Under Low Dose Rate

High photoresponse sensitivity of lithium-doped ZnO (LZO) thin films for weak ultraviolet signal photodetector

Bismuth tri-iodide (BiI3) single crystals for x-ray detectors application were grown by using physical vapor transport method. Detectors with different electrode configuration were fabricated for electrical and x-ray detection performance measurements. Electrical anisotropy including resistivity, dark current, carrier transport and x-ray induced photoelectricity properties was obtained. Carrier scattering effect deriving from lattice structure, combination bond, dislocation and stacking fault is responsible for the anisotropy properties. Dark current of the detectors with electrical field parallel (E//c) and perpendicular (E ⊥ c) to crystal c-axis were obtained as 0.5 pA and 2.1 pA, respectively. A remarkable signal-to-noise ratio of 896.4 and the sensitivity up to 0.526 × 104 μC Gy−1 cm−2 are achieved in E ⊥ c-axis configuration under 0.02 V μm−1 DC electric field and x-ray exposure dosage rate of 489.78 μGy h−1.

Electrical properties of x-ray detector based on bismuth tri-iodide single crystal with electrode configuration considering

Lead iodide (PbI2) single crystals have been extensively investigated due to their potential applications in nuclear radiation detectors at room temperature. In this letter, the properties of ultrathin PbI2 single crystals were obtained and investigated by X-ray diffraction, ultraviolet-visible diffuse reflection spectroscopy, and field emission scanning electron microscopy. The X-ray photodetector based on ultrathin PbI2 single crystal with a Schottky configuration of Au/PbI2/Mo was also fabricated through a facile method. Especially, the X-ray photodetector exhibits good stability and reproducibility. A large sensitivity of ${0}.{12} \times {10}^{{4}} \mu \text{C}$ /Gyair/cm2 was obtained for X-ray photodetector based on PbI2 single crystal at zero bias under a low radiation dose rate (0.19 mGy/h), which is sixty times higher than that of currently $\alpha $ -Se X-ray detectors at high bias. Moreover, we have further illustrated the working principles of the photodetector at zero, positive and negative bias with and without X-ray illumination. Our investigation substantiates the potential of the self-powered X-ray photodetector based on ultrathin PbI2 single crystal as a candidate device in optoelectronic applications.

Self-Powered X-Ray Photodetector Based on Ultrathin PbI 2 Single Crystal

The invention discloses a method for preparing lead iodide polycrystalline films on the basis of vacuum thermal evaporation processes. The method includes ultrasonically cleaning ITO (indium tin oxide) glass substrates in deionized water according to semiconductor cleaning standards for 15-30 min; further placing the ITO glass substrates in ethyl alcohol and ultrasonically cleaning the ITO glass substrates in the ethyl alcohol for 15-30 min; then placing the ITO glass substrates in acetone and ultrasonically cleaning the ITO glass substrates in the acetone for 15 min; blow-drying the ITO glasssubstrates by inert gas guns; preferably placing the ITO glass substrates in drying machines and cleaning the ITO glass substrates in the cleaning machines for 15-30 min; taking out the ITO glass substrates, placing the ITO glass substrates in specified drying ovens and baking the ITO glass substrates in the drying ovens at the temperatures of 150-200 DEG C for 3 h for standby application. The method has the advantages that pollution on polycrystalline films due to volatile substances possibly available in heating sources can be completely eradicated, defects of the polycrystalline films canbe reduced, and accordingly various performance indexes of the lead iodide polycrystalline films further can be improved.

Zongyan Gou

Papers

Self-Powered X-Ray Detector Based on All-Inorganic Perovskite Thick Film with High Sensitivity Under Low Dose Rate

High photoresponse sensitivity of lithium-doped ZnO (LZO) thin films for weak ultraviolet signal photodetector

Electrical properties of x-ray detector based on bismuth tri-iodide single crystal with electrode configuration considering

Self-Powered X-Ray Photodetector Based on Ultrathin PbI 2 Single Crystal

Method for preparing lead iodide polycrystalline films on basis of vacuum thermal evaporation processes