Showing papers by "Freescale Semiconductor published in 2020"

Method of converting high-level test specification language to low-level test implementation language

Abstract: A method comprising: recording test code defined in a high-level test specification language; and automated analysis of the test code defined in the high-level test specification language before a conversion of the high-level test specification language to a low-level test implementation language configured to enable testing of a target by a test module.

Integrated circuit processor and method of operating the integrated circuit processor in different modes of differing thread counts

Abstract: A processor includes an instruction pipeline. The pipeline can be operated alternatively in a multi-thread mode and in a single-thread mode. In the multi-thread mode, the instruction pipeline processes multiple threads in an interleaved or simultaneous manner. In the single-thread mode, the pipeline processes a single thread. The instruction pipeline comprises multiple functional units, each of which is reserved for one thread among the multiple threads when the pipeline is in the multi-thread mode and reserved for one context layer among multiple context layers when the instruction pipeline is in the single-thread mode.

Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferromagnetic structure and methods of manufacturing thereof

Abstract: A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.