•Journal•ISSN: 0015-3222
Fizika i tehnika poluprovodnikov
Izdatel'stvo Nauka
About: Fizika i tehnika poluprovodnikov is an academic journal published by Izdatel'stvo Nauka. The journal publishes majorly in the area(s): Chemistry & Computer science. It has an ISSN identifier of 0015-3222. It is also open access. Over the lifetime, 217 publications have been published receiving 11 citations. The journal is also known as: Physics and technics of semiconductors & FTP.
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TL;DR: In this paper , the performance of silicon-based photocells with impurity nickel atoms by diffusion methods and during growth were compared, and it was found that photocells doped with impure nickel atoms during silicon growth have an improvement in parameters comparable to that obtained by the diffusion doping method.
Abstract:
In this work, the parameters of silicon-based photocells doped with impurity nickel atoms by diffusion methods and during growth were compared. It was found that photocells doped with impurity nickel atoms during silicon growth have an improvement in parameters comparable to that obtained by the diffusion doping method. Additional heat treatment at T=800oC makes it possible to significantly improve their basic parameters. Keywords:silicon, photocell, nickel, thermal annealing, diffusion.
2 citations
TL;DR: In this article , the energy of exciton transition and the radiative and non-radiative broadenings were investigated by means of reflectance spectroscopy for a 14-nm GaAs/AlGaAs quantum well.
Abstract:
Basic exciton parameters, such as the energy of exciton transition and the radiative and nonradiative broadenings, are experimentally studied by means of reflectance spectroscopy for a heterostructure with a 14-nm GaAs/AlGaAs quantum well. Particular attention is paid to the nonradiative broadening which is sensitive to densities of free carriers and long-lived nonradiative excitons. A sublinear increase of the broadening of the heavy-hole and light-hole exciton resonances is observed when the light-hole exciton resonance is excited with increasing power. A simple model is developed, which allows one to well reproduce the observed dependence. Keywords: exciton, quantum well, nonradiative broadening.
1 citations
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TL;DR: In this article , it was found that the silicon preliminarily doped with a high concentration of phosphorus during the diffusion of gallium, there is a significant increase in the solubility of the gallium.
Abstract:
It was found that the silicon preliminarily doped with a high concentration of phosphorus during the diffusion of gallium, there is a significant increase in the solubility of the gallium. The results obtained are explained by the interaction of gallium and phosphorus atoms, as a result of which quasi-neutral molecules [P+Ga-] are formed. It is assumed that the formation of such quasineutral molecules [P+Ga–] stimulates the formation of Si2GaP binary unit cells in the silicon lattice. It is shown that a sufficiently high concentration of such unit cells can lead to a significant change in the electrophysical parameters of silicon, i.e. the possibility of obtaining a new material based on silicon.
1 citations
TL;DR: In this article , an improved technique for thermal resistance measurement of edge-emitting diode lasers using spontaneous emission spectra, collected through the opening in the n-contact within the range of operating currents, has been proposed.
Abstract:
An improved technique for thermal resistance measurement of edge-emitting diode lasers using spontaneous emission spectra, collected through the opening in the n-contact within the range of operating currents, has been proposed. The advantage of the proposed technique is that systematic errors typical for measurements based on lasing spectra are excluded. The accuracy of the method was verified by measuring the dependence of the thermal resistance on the cavity length for diode lasers with 100 μm strip width. Obtained results are in good agreement with the model, and the minimum measurement error was ±0.1 K/W. The proposed technique can be used in metrological support of fabrication process of semiconductor lasers. Keywords: laser diode, thermal resistance, spontaneous emission.
1 citations
TL;DR: In this paper , the optimum temperature of nickel diffusion into silicon is determined - Т = 800-850 ° С, where Ρ is the temperature at which a working p-n junction is formed.
Abstract: It has been shown experimentally that nickel clusters on the surface of a silicon sample contain a large amount of oxygen and recombination impurities - Cu, Fe, Cr, which shows good gettering properties of clusters. The optimum temperature of nickel diffusion into silicon is determined - Т=800-850 ° С. Doping with impurity nickel atoms with the formation of clusters makes it possible to increase the lifetime of nonequilibrium charge carriers in the base of a solar cell by up to 2 times, while the formation of a nickel-enriched region in the face layer is more efficient. It is shown that the effect of additional doping with nickel weakly depends on the sequence of the processes of nickel diffusion and the creation of a working p–n-junction.
1 citations