Showing papers in "IEEE Journal of Solid-state Circuits in 1970"
TL;DR: The technique of designing inductorless filters by replacing the inductors in conventional LC filters with gyrators and capacitors is considered for the special case of the high-quality channel bandpass filters used in multiplex telephony.
Abstract: The technique of designing inductorless filters by replacing the inductors in conventional LC filters with gyrators and capacitors is considered for the special case of the high-quality channel bandpass filters used in multiplex telephony. One particular gyrator circuit, which has been found to be very satisfactory, using two operational amplifiers and four resistors, is analyzed in some detail. The difficulties of simulating floating inductors are discussed, and ways of designing filters to avoid the necessity of such simulations are proposed. The dynamic range of a filter is defined and the factors controlling it are described. Detailed measured results of two specific channel filter designs are included.
76 citations
TL;DR: In this article, two MOS photomatrix configurations, voltage sampling and recharge sampling, have been compared with regard to sources of fixed-pattern noise in terms of peak-to-peak signal to FPN ratios.
Abstract: Two MOS photomatrix configurations, voltage sampling and recharge sampling, have been compared with regard to sources of fixed-pattern noise. Voltage sampling provides a high-amplitude low-impedance photosignal, with FPN primarily due to threshold variation in the amplifying MOST at each element. Recharge sampling is used for large high-yield rapidly scanned arrays, with FPN caused mostly by variations in spurious capacitive breakthrough. Production peak-to-peak signal to FPN ratios are 20:1 for voltage sampling and 50:1 for recharge sampling.
50 citations
TL;DR: The present-day status of microwave integrated circuits (MICs) is reviewed in this paper, with examples presented throughout material technology for substrates, conductors, dielectrics and resistors is described.
Abstract: The present-day status of microwave integrated circuits (MICs) is reviewed Different microwave circuit techniques are discussed and compared, with examples presented throughout Material technology for substrates, conductors, dielectrics and resistors is described The design data and technology for the fabrication of distributed- and lumped-element circuits are presented with illustrations of fabrication techniques Some lumped and distributed circuits are compared with regard to both design and performance A number of areas for future work in MICs are listed
30 citations
TL;DR: An economical approach to integrated active RC filter design is described, where a small family of cascadable second-order filter building blocks consisting of tantalum thin-film RC networks and semiconductor, integrated, operational amplifiers are described.
Abstract: An economical approach to integrated active RC filter design is described. Complex filter networks are broken down into a small family of cascadable second-order filter building blocks consisting of tantalum thin-film RC networks and semiconductor, integrated, operational amplifiers. The same building blocks are used for any desired filter configuration such as low-pass, high-pass, or bandpass filters, all-pass networks, notch filters, etc. Therefore, they possess the uniformity necessary for high-production quantities and batch processing, and consequently, benefit from the economical advantages that go with these methods.
30 citations
TL;DR: Applications demonstrating the performance of a four-quadrant multiplier and signal switch in controlled-feedback modes are presented and the range of possible applications of the circuit is greatly increased by considering this mode of operation over previously suggested applications.
Abstract: Applications demonstrating the performance of a four-quadrant multiplier and signal switch in controlled-feedback modes are presented. The range of possible applications of the circuit is greatly increased by considering this mode of operation over previously suggested applications.
21 citations
TL;DR: Equations are derived that give the electronic tuning range of solid-state microwave oscillators in terms of the Q factor of the tuning device and the available power output and it is shown that series tuning is superior to shunt tuning.
Abstract: Equations are derived that give the electronic tuning range of solid-state microwave oscillators in terms of the Q factor of the tuning device and the available power output. For currently available varactors the tuning range is severely limited by the Q factor but some exchange of power output for the tuning range is possible. It is shown that series tuning is superior to shunt tuning.
20 citations
TL;DR: It is shown that the inductance parameters are very sensitive to amplifier gain; this can be remedied by using a high-gain differential-input operational amplifier.
Abstract: The authors deal with two recently reported active circuits for realization of a grounded inductor using a single unity-gain amplifier and RC networks. It is shown that the inductance parameters are very sensitive to amplifier gain; this can be remedied by using a high-gain differential-input operational amplifier. Amplifier imperfection in respect of nonzero output impedance is found to make both circuits behave similarly. Sensitivity of tuned circuits using the active inductances is analyzed and conditions for minimum sensitivity are derived.
19 citations
TL;DR: In this article, the fabrication of X-band IMPATT diodes and their evaluation in simple singly tuned circuits are described, and it is found that oscillator noise and power saturation are related to the existence of a maximum Iiiiting value of ac voltage across the diode.
Abstract: The fabrication of X-band IMPATT diodes and their evaluation in simple singly tuned circuits are described. Typical performance in X band for diodes with junction areas of = 2 X 10-1 cmz and breakdown voltages between 65 and 80 volts is 0.7 watt at 7 percent efficiency with junction temperatures < 200"C. More than 1.0 watt is easily obtained at 250"C junction temperatures. It is found that oscillator noise and power saturation are related to the existence of a maximum Iiiiting value of ac voltage across the diode. Qualitative agreement of these results with a simple large- signal model is found.
18 citations
TL;DR: A program for the design of generalized TEM microwave circuits has been written using a simple but effective rationale called direct pattern search to reduce the error between a desired circuit objective and the current value of a chosen response.
Abstract: A program for the design of generalized TEM microwave circuits has been written. The optimization process utilizes a simple but effective rationale called direct pattern search to reduce the error between a desired circuit objective and the current value of a chosen response. Lossy transmission line equations are utilized in the program for exactness. As an example of its utility a 2-4-GHz maximally flat magnitude microwave transistor amplifier is designed and fabricated.
18 citations
TL;DR: A method is proposed of transistor characterization by effective large-signal parameters measured under the condition of sinusoidal port voltages, which is anticipated that this form of active-device description will find application in the computer design of narrow-frequency-band constant-amplitude nearly sinusoid amplifiers and oscillators.
Abstract: A method is proposed of transistor characterization by effective large-signal parameters measured under the condition of sinusoidal port voltages. It is anticipated that this form of active-device description will find application in the computer design of narrow-frequency-band constant-amplitude nearly sinusoidal amplifiers and oscillators.
16 citations
TL;DR: The terminal characteristics of the burst noise are presented and a phenomenological noise-circuit model is developed that helps clarify the cause of the anomalous burst noise.
Abstract: Recent noise measurement from 1 Hz to 5 kHz on integrated-circuit transistors have shown an anomalous burst noise in addition to the usual noise spectrum. The terminal characteristics of the burst noise are presented and a phenomenological noise-circuit model is developed.
TL;DR: The authors present the theoretical and experimental investigations of an oscillator consisting of digital integrated circuits that act as nonlinear active elements that is derived from the inverse tangent approximation to the input-output characteristic of the digital IC.
Abstract: The authors present the theoretical and experimental investigations of an oscillator consisting of digital integrated circuits that act as nonlinear active elements. The circuit equation for this oscillator is derived from the inverse tangent approximation to the input-output characteristic of the digital IC. Using the perturbation method, the approximate solutions of this equation are obtained. The propriety of the inverse tangent approximation is ascertained by comparing the calculated and experimental value of the limit cycles.
TL;DR: This correspondence is a study of why FET pairs are not used as input stages and bipolar transistors used as output stages, since compatible FET and bipolar transistor monolithic structures have been developed.
Abstract: A field-effect transistor (whether junction type or MOS type) has very high input impedance. For those who desire to achieve a higher input impedance, it is often asked `Why aren't FET pairs used as input stages and bipolar transistors used as output stages, since compatible FET and bipolar transistor monolithic structures have been developed?' This correspondence is a study of this question.
TL;DR: In this article, a new approach to the design of HF transistor-tuned power amplifiers is proposed that uses the concepts of charge control, and a circuit arrangement and design technique is described that allows the performance of tuned power amplifier operating at high frequencies to be specified and predicted accurately.
Abstract: A new approach to the design of HF transistor-tuned power amplifiers is proposed that uses the concepts of charge control. A circuit arrangement and design technique is described that allows the performance of tuned power amplifiers operating at high frequencies to be specified and predicted accurately. The collector current of a transistor is, within limits, proportional to the charge stored in the base. A technique is described that defines this stored charge by a sinusoidal drive voltage across a capacitor in series with the base. Sinusoidally varying charge in phase with the drive voltage is injected into the base and approximately forms a truncated sinusoid of collector current with a predictable and controlled conduction angle and height. Dynamic collector characteristics are described that relate the stored base charge to the collector voltage and current. From these, or by direct measurement, are obtained dynamic constant current curves that are plotted on the graph of base charge versus collector voltage. This graph enables the collector current pulse shape to be predicted, and thus the difficult design problem where the collector current pulse shape is unknown is overcome. An amplifier is designed using this technique, and design and experimental results are in good agreement.
TL;DR: The addition of eight active devices can further improve CMRR, although at the expense of other parameters, and the tradeoffs between transistor current gain and CMRr are investigated.
Abstract: A simple expression is derived for the common-mode rejection ratio (CMRR) of monolithic operational amplifiers in terms of transistor processing parameters. The tradeoffs between transistor current gain and CMRR are investigated. The feasibility of 120-dB CMRR is demonstrated with a common-emitter differential pair. The addition of eight active devices can further improve CMRR, although at the expense of other parameters.
TL;DR: The rate of dark current increase of silicon-diode-array camera- tube targets has been found to be as high as 10 nA/h when operated with electrode potentials as much as 1000 volts.
Abstract: The rate of dark current increase of silicon-diode-array camera- tube targets has been found to be as high as 10 nA/h when operated with electrode potentials as high as 1000 volts. Irradiation of the target by soft X-rays is shown to cause the fast-state density at the silicon-silicon dioxide interface to increase. The increased fast-state density is largely responsible for the increased dark current. The X-rays are generated by the impact of the returning electron beam upon high-potential tube electrodes. Several means for reducing the X-ray flux at the target are discussed. The most effective means is a reduction in tube electrode potentials to low values where dark current aging rates as small as 0.001 nA/h have been achieved.
TL;DR: The addition of a capacitor shunting the device, which tunes higher order harmonics, has made it possible to achieve stable jitter-free operation and to develop a microwave circuit suitable for use with solid-state microwave sources in L-band system applications.
Abstract: Absfract—A microwave circuit suitable for use with solid-state microwave sources in L-band system applications has been developed. The use of this circuit with high-efficiency silicon avalanche diodes is discussed. This circuit incorporates coupled TEM bars with variable high-Q capacitors. The circuit is about A/8 long and an L band can be fit into a box 1 1/2 by 2 by 5/8 inches high. A computer analysis of the coupled bar structure has been performed. Thk has been used to calculate the fundamental and harmonic impedances at the device terminals for various values of circuit parameters. Measurements made with a Hewlett-Packard network analyzer are in good agreement with the calculated results. The fundamental impedance of the circuit can be varied to match a 50-ohm load to a wide range of device impedances. The harmonic impedances can be tuned independently by the addition of idler bars to obtain optimum device performance. With these circuits 30-mil silicon avalanche diodes have yielded 220 watts of peak output power with 29 percent efficiency. The devices were operated with 0.5-,M pukes and up to 1 percent duty cycle. The addition of a capacitor shunting the device, which tunes higher order harmonics, has made it possible to achieve stable jitter-free operation. Devices in this circuit have been run over the temperature range from –50° to + 125“C with less th~ a 5-MHZ variation in frequency and a 0.7-dB shift in power.
TL;DR: In this paper, techniques used to design and produce silicon monolithic integrated circuits for use in the radiation environment found near a nuclear detonation are reviewed, and the procedures used to define an anticipated threat are given, and interactions between typical radiations and IC materials are discussed.
Abstract: Techniques used to design and produce silicon monolithic integrated circuits for use in the radiation environment found near a nuclear detonation are reviewed. The procedures used to define an anticipated threat are given, and interactions between typical radiations and IC materials are discussed. Circuit selection and design with respect to these interactions are considered process developments needed to implement these designs reviewed. The electrical and radiation performance currently available in production from several sources is described.
Journal Article•
TL;DR: A highly reliable integrated pacemaker composed of two capacitors and an integrated control circuit is described and the problems and design of integrated four-layer structures for relaxation oscillators are analyzed.
Abstract: A highly reliable integrated pacemaker composed of two capacitors and an integrated control circuit is described. The incorporation of a suitable four-layer structure into the integrated circuit has resulted in a comparatively simple and reliable circuit concept. The problems and design of integrated four-layer structures for relaxation oscillators are analyzed.
TL;DR: It is shown that in either property more than an order of magnitude improvement over conventional photocathodes is achieved in some representative negative-electron-affinity photoemitters.
Abstract: The operation of negative-electron-affinity photoemitters is discussed briefly and some of the important design considerations are listed The spectral response and dark current of the new emitters are compared to those of conventional photoemitters It is shown that in either property more than an order of magnitude improvement over conventional photocathodes is achieved in some representative negative-electron-affinity photoemitters
TL;DR: The technological and electrical parameters of p-channel enhancement silicon m.f.o.t.s with recessed gates are presented and compared with conventional structures fabricated in a similar manner and a higher circuit stability is obtainable.
Abstract: The technological and electrical parameters of p-channel enhancement silicon m.o.s.f.e.t.s with recessed gates are presented and compared with conventional structures fabricated in a similar manner. In the instance of the nonoverlapping gate the gain-bandwidth product is increased by a factor of about 3. The maximum frequency, as obtained by extrapolation of measurements up to 1 GHz, is f/SUB max//spl ap/3 GHz. If the depletion region of the drain contact is too short to overlap with the gate field, the static characteristics follow a space-charge-limited current-voltage relation. When higher source-drain voltages are applied the normal enhancement-type behavior results but with reverse transconductance y/SUB r/ strongly reduced (by a factor of 8-12 at 1 GHz). A higher circuit stability is obtainable, whereas the parameters y/SUB i/,y/SUB 0/, and y/SUB f/ are only slightly influenced.
TL;DR: The authors present the design considerations for a 256-bit bipolar LSI memory component and the system-packaging technology by which the LSI components were assembled to provide seventy 131 072-bit 200-ns full-cycle main process element memories for the ILLIAC IV computing system.
Abstract: The authors present the design considerations for a 256-bit bipolar LSI memory component and the system-packaging technology by which the LSI components were assembled to provide seventy 131 072-bit 200-ns full-cycle main process element memories for the ILLIAC IV computing system. The concepts utilized allow memory modularity from about 1024 bytes to over 3,000,000 bytes while maintaining an approximately linear price per bit over the whole range. The experience on LSI memory component and system testing is discussed. Also included are observations on experiences with component designs and prices during the PEM project.
TL;DR: Results of experiments in which 7-MHz elastic surface waves were used for horizontal scanning of a simple display system and MOSFET circuitry was used to control light emission by local storage of video-signal levels.
Abstract: Results of experiments in which 7-MHz elastic surface waves were used for horizontal scanning of a simple display system are described. MOSFET circuitry was used to control light emission by local storage of video-signal levels. The scanning function was carried out by stress pulses that passed underneath interdigital transducers on a PZT-7 delay line to generate voltage pulses for gating local control circuits.
TL;DR: In this article, the essential functional parts of an electroluminescent diode display system, capable of displaying one or more lines of alphanumeric characters, are compared from the standpoint of relative cost and operational flexibility.
Abstract: The author discusses organizations of the essential functional parts of an electroluminescent diode display system, capable of displaying one or more lines of alphanumeric characters Four different basic organizations are compared from the standpoint of relative cost and operational flexibility
TL;DR: The authors describe the design, construction, and performance characteristics of a low-resolution 50/spl times/80 element solid-state imaging system that has been fabricated using multichip large-scale integration using advanced multilayer flexible interconnection techniques.
Abstract: The authors describe the design, construction, and performance characteristics of a low-resolution 50/spl times/80 element solid-state imaging system that has been fabricated using multichip large-scale integration. Techniques used to fabricate the substrate that contains 117 MOS and low-power bipolar integrated circuits plus the 4000-element phototransistor mosaic sensor array are discussed. Also, the methods used to mount and provide interdevice signal paths, including the use of advanced multilayer flexible interconnection techniques are shown.
TL;DR: The design of a stable active RC bandpass filter for general-purpose laboratory use is presented and noninteracting controls are provided for frequency Q and peak gain.
Abstract: The design of a stable active RC bandpass filter for general-purpose laboratory use is presented. Noninteracting controls are provided for frequency Q and peak gain.
TL;DR: A new variable resistor circuit that uses the transconductance of an MOS transistor operating in the saturated current region, and its application as the feedback resistor of an AGC amplifier are described.
Abstract: A new variable resistor circuit (the resistance of which varies over a range of 0.8 to 50 k/spl Omega/) that uses the transconductance of an MOS transistor operating in the saturated current region, and its application as the feedback resistor of an AGC amplifier are described.
TL;DR: A new configuration, characterized by an extremely low emitter resistance, which is independent of the output current, is proposed, which would significantly reduce distortion in transistors operated at very low bias currents.
Abstract: When transistors are operated at very low bias currents, excessive distortion is often produced by the changing emitter-base incremental resistance. A new configuration, characterized by an extremely low emitter resistance, which is independent of the output current, is proposed.