Showing papers in "Materials Science Reports in 1986"

TL;DR: In this article, the chemical structure of the SiO2/Si interface and its relationship to both MOS device processing chemistry and, ultimately, the resultant electrical device properties were investigated.

TL;DR: In this paper, the basic properties of rare-earth compounds of the type R 2 Fe 14 B, R 2 Co 14 B and several related intermetallic compounds are discussed in terms of magnetic exchange interaction and crystal field theory.