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Figure 3.11: Transmition Electron Microscopy (TEM) image showing extended defects in the crystalline lattice of a thin film of SiGe on Si which has been subjected to oxidation at 1000 ◦C.
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Journal Article
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DOI
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A comparative analysis of oxidation rates for thin films of SiGeversusSi
[...]
Ethan Schuyler Long
1
,
Augustinas Galeckas
1
,
Andrej Yu. Kuznetsov
1
•
Institutions (1)
University of Oslo
1
01 Oct 2012
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Physica Status Solidi (a)