Patent
Double channel heterostructures
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TLDR
In this article, a dual channel heterostructure in which a pair of quantum wells separated by a thin barrier layer have their band gaps shifted by applied gate voltages between overlap and non-overlap relationships is considered.Abstract:
A semiconductive device includes a dual channel heterostructure in which a pair of quantum wells separated by a thin barrier layer have their band gaps shifted by applied gate voltages between overlap and non-overlap relationships. When the gaps are in an overlap relationship intraband tunneling through the barrier between the two quantum wells serves to introduce charge carriers in the channels to make them conducting. A specific embodiment uses quantum wells of indium arsenide and gallium antimonide in a host lattice of aluminum antimonide.read more
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Intrinsically doped semiconductor structure and method for making
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Patent
Heterojunction and dual channel semiconductor field effect transistor or negative transconductive device
Borge Vinter,Armand Tardella +1 more
TL;DR: In this article, a dual channel heterojunction semiconductor device with a high mobility layer, a barrier layer and a low mobility layer is presented. But the barrier layer is thin enough for the carriers to pass from the low-migration layer to the high-mobile layer by tunnel effect, during variations of the polarization electrical field of the dual channel.
Patent
Dual channel high electron mobility field effect transistor
TL;DR: In this paper, a multi-terminal Group III-V semiconductor high electron mobility field effect transistor (HEMFET) is presented. But the transistor is not suitable for high speed signal coupler, amplifier, mixer as well as photoelectric detector/amplifier.
Patent
Schotkky gate field effect transistor with modulated doping layer as operation layer
TL;DR: In this article, a modulation-doped N-type GaAs epitaxial layer 8 is formed on an N type GaAs substrate, and then a low doping layer 9 is formed and processed in a projecting shape, and a Schottky electrode 13 is formed around it.