Patent
Fabrication of insulation film and semiconductor device
TLDR
In this paper, a highly reliable gate insulation film of silicon oxide by positive column system plasma CVD using hydrocarbon containing organic silane having ethoxy group, oxygen, and chlorine as a material is presented.Abstract:
PURPOSE:To obtain a highly reliable gate insulation film of silicon oxide by positive column system plasma CVD using hydrocarbon containing organic silane having ethoxy group, oxygen, and chlorine as a material CONSTITUTION:A silicon oxide 202 is deposited on a substrate 201 and an insular silicon region 203 is formed theron Another silicon oxide 204 is deposited, as a gate dielectric film, over the insular region 203 by positive column plasma CDV using hydrocarbon, ie, trichloroethylene, containing an organic silane, ie, tetraethoxy silane, oxygen and chlorine as amaterial Subsequently, a gate electrode 205, impurity regions 206, 207, and a channel region 208 are formed Furthermore, contact holes 210, 211 and electrodes 212, 213 are formed to complete a TFT This method allows formation of highly reliable gate insulation film, ie, silicon oxide 204read more
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Patent
Method of Manufacturing a Semiconductor Device
Masaaki Hiroki,Shunpei Yamazaki +1 more
TL;DR: In this article, the amorphous silicon film is formed using silane gas diluted with hydrogen and crystallization is attained in the crystallization process even with the continuous formation of the base film through the polysilicon film in the single film forming chamber.
Patent
Transistor and cvd apparatus used to deposit gate insulating film thereof
TL;DR: In this paper, a transistor adapted to suppress characteristic degradation resulting from fluorine contained in a deposited film was shown to provide excellent reliability even when it was continuously driven for a long period of time at a relatively high temperature.
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Transistor and cvd device for forming its gate insulating film
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Patent
Transistor and cvd apparatus used for forming gate insulating film thereof
TL;DR: In this paper, a transistor with 1 × 1020 atoms/cm3 or less fluorine concentration was shown to have excellent reliability even when driven at relatively high temperatures for a long time.