Patent
Highly Selective Doped Oxide Etchant
TLDR
In this article, the etch solutions are formulated as a mixture of hydrofluoric acid and an organic acid having a dielectric constant less than water, optionally with an inorganic acid, and a pH of 1 or less.Abstract:
Etch solutions for selectively etching doped oxide materials in the presence of silicon nitride, titanium nitride, and silicon materials, and methods utilizing the etch solutions, for example, in the construction of container capacitor constructions is provided. The etch solutions are formulated as a mixture of hydrofluoric acid and an organic acid having a dielectric constant less than water, optionally with an inorganic acid, and a pH of 1 or less.read more
Citations
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Patent
Methods of Forming a Plurality of Capacitors
TL;DR: In this article, a method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area, which is etched with a liquid etching solution effective to expose outer sidewall portions of the conductive material within the array area.
Patent
Pitch multiplication using self-assembling materials
TL;DR: In this paper, self-assembling materials, such as block copolymers, are used as mandrels for pitch multiplication, and the spacer material is subjected to a spacer etch to form spacers on sidewalls of the mandrel.
Patent
Methods of forming pluralities of capacitors
Gurtej S. Sandhu,Mark Durcan +1 more
TL;DR: In this paper, a patterned masking layer is formed over the metal, and a pit is formed in the metal outer surface within individual of the openings, and the metal is anodically oxidized through the openings effective to form a single metal oxide-lined channel in individual openings over the individual capacitor storage nodes.
Patent
Methods of forming a plurality of capacitors
TL;DR: In this paper, a method of forming a plurality of capacitors using two masking steps is described, and conductive material of the individual capacitor electrodes is deposited into the overlapping portions of each of the first and second openings.
Patent
Methods of forming a plurality of capacitors
TL;DR: In this article, a plurality of capacitor electrode openings is formed over a substrate, and individual capacitor electrodes are formed within individual of the openings, which are incorporated into the plurality of capacitors.
References
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Patent
Semiconductor memory device
TL;DR: In this article, a pre-equalize-circuit is used to solve the problem that as the number of memory circuits connected to a pair of bit lines increases, the length of wiring constituting bit lines also increases, and when total sum of this parasitic capacitance becomes larger than current drive capability of the memory circuit, read-out of data is made infabe.
Patent
Method of selectively etching silicon dioxide dielectric layers on semiconductor wafers
David A. Cathey,J. Brett Rolfson +1 more
TL;DR: In this article, the acid solution comprising a mixture of at least two different mineral acids provided in a selected ratio relative to one another, one of the mineral acids being HF, is compared to the undoped layer of SiO2.
Patent
Method of cvd for forming silicon nitride film on substrate
TL;DR: In this article, a method of CVD for forming a silicon nitride film on substrate (W), comprising the step of accommodating substrate in treating vessel (8) and heating the same to a treating temperature, was presented, where a treating gas containing hexaethylaminodisilane gas and ammonia gas was fed onto the substrate.
Patent
Methods for forming openings in doped silicon dioxide
TL;DR: In this article, a method for forming openings in doped silicon dioxide layers and of forming self aligned contact holes is described, where the openings are generally etched in a plasma processing chamber.