Journal ArticleDOI
Investigation of dc hopping conduction in TlGaS2 and TlInS2 single crystals
TLDR
In this paper, the authors established that variable-range hopping conduction takes place between states localized near the Fermi level in layered TlGaS2 and TlInS2 single crystals both along and across their natural layers in a constant electric field at T⩽200 K.Abstract:
It is established that variable-range hopping conduction takes place between states localized near the Fermi level in layered TlGaS2 and TlInS2 single crystals both along and across their natural layers in a constant electric field at T⩽200 K. The densities of states near the Fermi level and the hopping distances at different temperature are estimated. The occurrence of activationless hopping conduction is established in TlGaS2 and TlInS2 single crystals in the temperature range 110–150 K.read more
Citations
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Journal ArticleDOI
Electronic properties and phase transitions in low-dimensional semiconductors
TL;DR: In this article, the authors present a review of the current state of the literature on electronic properties and phase transitions in TlX and TlMX2 (M = Ga, In; X = Se, S, Te) compounds.
Journal ArticleDOI
Impacts of Temperature and Frequency on the Dielectric Properties for Insight into the Nature of the Charge Transports in the Tl2S Layered Single Crystals
TL;DR: In this paper, the dielectric properties of Tl2S layered single crystals were studied using the ac measurements in the low temperatures ranging from 77 to 300 K. The authors found that the temperature dependence of ac conductivity follows the Arrhenius relation via which the impact of temperature on the electrical processes in an applied ac electric field was illustrated and analyzed.
Journal ArticleDOI
Electron‐phonon short‐range interactions mobility and p‐ to n‐type conversion in TlGaS2 crystals
A.F. Qasrawi,Nizami Gasanly +1 more
TL;DR: In this article, an analysis of the temperature-dependent electrical resistivity, Hall coefficient and carrier concentration data reveals the extrinsic type of conduction with donor impurity levels that behave as acceptor levels when are empty.
Journal ArticleDOI
Optoelectronic and electrical properties of TlGaS2 single crystal
TL;DR: In this paper, the optoelectronic and electrical properties of TlGaS2 single crystals have been investigated by means of room temperature transmittance and reflectance spectral analysis, Hall coefficient, dark electrical resistivity and photocurrent measurements in the temperature range of 200-350 K.
Journal ArticleDOI
Temperature effect on dark electrical conductivity, Hall coefficient, space charge limited current and photoconductivity of TlGaS2 single crystals
A.F. Qasrawi,Nizami Gasanly +1 more
TL;DR: In this article, the authors measured and analyzed the dark electrical conductivity, Hall coefficient, space charge limited current, and illumination and temperature dependences of the photocurrent of TlGaS2 single crystals in the temperature regions of 100-350, 200-350 and 200-290 K, respectively, and revealed that the energy level of (0.240 ± 0.005) eV is a trapping state with trap density of 2.2-3.9 cm−3.
References
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Electronic processes in non-crystalline materials
TL;DR: The Fermi Glass and the Anderson Transition as discussed by the authorsermi glass and Anderson transition have been studied in the context of non-crystalline Semiconductors, such as tetrahedrally-bonded semiconductors.
Journal ArticleDOI
Anomalous impurity conductivity inn-GaSe andn-GaS
TL;DR: In this article, the a.c. conductivity of GaSe and n-GaS was investigated and the results were compatible with the theoretical formulation given by Shklovskii for lightly doped semiconductors.
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