A pattern generation method for generating a pattern of a cell used to generate a pattern of a mask using a computer, includes obtaining data of pattern of the cell, calculating image of the pattern of the cell to obtain an evaluation value of the image by repeatedly changing a parameter value of an exposure condition when the mask which has the pattern of the cell is illuminated to project image of the pattern of the cell onto a substrate to expose the substrate, and a parameter value of the pattern of the cell, and determining parameter value of the pattern of the cell when the evaluation value satisfies a predetermined evaluation standard.

Mask and its manufacturing method, exposure, and semiconductor device fabrication method

Pattern generation method

In accordance with a phase shift mask of attenuation type and a manufacturing method thereof, at a prescribed region of a phase shifter portion near and around a light transmitting portion, an auxiliary pattern is provided for controlling an amount of exposure light onto a portion of an exposed material corresponding to this region. Auxiliary pattern enables to cancel light intensity of a side lobe, thereby preventing generation of a region having a high light intensity (a side lobe) at the periphery of the light transmitting portion of the phase shift mask of attenuation type.

Mask and its manufacturing method, exposure, and semiconductor device fabrication method

Citations

Pattern generation method

References

Phase shift mask of attenuation type and manufacturing method thereof

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