Patent
Method for fabricating a silicon force transducer
Mati Mikkor,Edward N. Sickafus +1 more
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In this paper, a silicon substrate (112) having nominal crystalline planes is anisotropically etched to form a pair of V-shaped grooves (18,20) along the top planar surface (14) and a first plate (16) between the grooves.Abstract:
A silicon substrate (112) having {100} nominal crystalline planes is anisotropically etched to form a pair of V-shaped grooves (18,20) along the top planar surface (14) and a first plate (16) between the grooves. The top planar surface is then doped to form a conductor region including the first plate 16). A substantially uniform layer (26) of a selectively etchable material, such as silicon oxide, is then grown over the grooved top planar surface. A layer (24) of doped silicon is grown over the silicon oxide layer to define a pair of V-shaped members opposite the pair of grooves. The silicon layer (24) is then partially etched to form a second plate (22) connected to the silicon layer (24) through a pair of V-shaped members (28,30). Both the second plate (22) and the pair of V-shaped members (28,30) are then suspended over the first capacitive plate (16) by etching a portion of the selectively etchable layer(26). Electronic circuitry (32) is then coupled to both the doped silicon layer and the doped substrate to detect changes in capacitance between the first and second plates (16,22) in response to an applied force, such as airflow, to be measured.read more
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Patent
Capacitive pressure sensor
TL;DR: In this paper, a capacitive pressure sensor is provided which has a conductive silicon diaphragm having a thick supporting portion at the periphery thereof and a thin inner deflecting portion which is reduced in thickness from the supporting portion by means of an etching process.
Patent
Solid state transducer and method of making same
Harry E. Aine,Barry Block +1 more
TL;DR: In this paper, the etch stop layer is opened in a pre-determined pattern and etchant is introduced through the opening in the etchant stop layer to produce substantial undercut etching of portions of the undercut layer.
Patent
Method of making silicon capacitive pressure sensor with glass layer between silicon wafers
TL;DR: In this article, two highly-doped electrically semiconductive feedthrough paths are formed through one wafer, each path contacting one of the capacitive plates, and a glass layer is formed on one of them where bonding is desired between the two wafers.
PatentDOI
Method of making a semiconductor transducer having multiple level diaphragm structure
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Patent
Method of making silicon diaphragm pressure sensor
Kazuji Yamada,Kobayashi Yutaka,Kanji Kawakami,Satoshi Shimada,Masanori Tanabe,Kobori Shigeyuki +5 more
TL;DR: In this article, a method of making a silicon diaphragm pressure sensor includes forming an oxide film (10) on one surface of a monocrystalline silicon substrate (9).