Patent
Method for forming pattern
TLDR
In this article, the authors proposed a method to improve the pattern precision by dividing the electron beam exposed dose of the subfield boundary portion among the pattern forming regions remote from the boundary and the joint correction regions, thereby obtaining the exposed dose required for forming the entire region.Abstract:
PURPOSE: To improve the pattern precision extending over the boundary portion by dividing the electron beam exposed dose of the subfield boundary portion among the pattern forming regions remote from the boundary and the joint correction regions, thereby obtaining the exposed dose required for forming the entire region. CONSTITUTION: When the main field MF of a wafer is divided into subfields SF 1 , SF 2 and a pattern is formed over the boundary portion B, an electron beam is first applied to the pattern forming regions P 1 , P 2 on both sides of the boundary B, and the electron beam is applied to joint correction regions P 11 , P 12 with a dose (0.5) smaller than the exposed dose (1) of the regions P 1 , P 2 , thereby making the sum of the exposed doses of the regions P 1 , P 2 and the correction regions P 11 , P 12 equal to the exposed dose for forming the region MF. With this method, the precision of a pattern extending over both sides of the boundary portion can be improved, and various patterns can be formed with good precision through adjustment of the exposed dose while taking into consideration the proximity effect at the subfield boundary and the thermal effect due to time difference of the beam exposure. COPYRIGHT: (C)1988,JPO&Japioread more
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