A solar cell module includes: two solar cells, each including an photoelectric conversion body 10a, 10b having first and second main faces and generating photogenerated carriers, a first electrode provided on the first main face, and a second electrode provided on the first or second main face and having a polarity opposite to that of the first electrode; and a wiring member 2a for electrically connecting the first electrode of one of the two solar cells to the second electrode of the other solar cell. The first electrode has a plurality of finger electrodes for collecting the photogenerated carriers generated in the photoelectric conversion body 10a and a bus-bar electrode 11a for collecting the photogenerated carriers collected by the plurality of finger electrodes. The wiring member 2a is connected onto the bus-bar electrode 11a of the one solar cell through a connection layer 13 formed of a conductive resin containing conductive material. The connection layer 13 is also in contact with the first main face of the photoelectric conversion body 10a.

Method of forming silicon oxide territory

Solar cell module

A plurality of grooves, each having a depth of 10 μm or more and arranged adjacent to each other, are formed at a predetermined portion of a semiconductor substrate where a passive element is formed. Then, a thermal oxidation treatment is performed to let an oxide film grow from an inside surface of each groove so as to fill an inside space of the groove with a thermal oxide film thus grown and turn an entire portion intervening between adjacent grooves into a thermal oxide layer. Each groove has a width of 1 μm or less, and a width of a semiconductor material intervening between two adjacent grooves is 81.8% or more with respect to the groove width.

Semiconductor substrate for a one-chip electronic device and related manufacturing method

The present invention provides a process for the
production of a semiconductor device comprising a semiconductor
element provided on a printed circuit board with a plurality of
connecting electrode portions provided interposed therebetween,
the gap between said printed circuit board and said
semiconductor element being sealed with an underfill resin
layer. In accordance with the present invention, (1) the
underfill resin layer is formed by melting a lamellar solid
resin provided interposed between said printed circuit board
and said semiconductor element, and (2) the lamellar solid
resin provided interposed between said printed circuit board
and said semiconductor element is heated for a predetermined
period of time until the temperature of the solid resin layer
reaches a predetermined range where the two components are
connected to each other under pressure under the following
conditions (X) and (Y):
 (X) Supposing that the initial residual heat of reaction of
the solid resin before heating is 100% as determined by a
differential scanning calorimeter (DSC), the residual heat of
reaction thereof is not more than 70% of the initial residual
heat of reaction; and (Y) The temperature of the semiconductor element is
predetermined higher than that of the printed circuit board,
and the difference in temperature between them is not less than
50°C. In this manner, a production process which facilitates the
resin sealing of the gap between the semiconductor element and
the board and thus can inhibit warpage of the entire
semiconductor device and a semiconductor device having an
excellent reliability can be provided. In the present
invention, the use of a sheet-like underfill material which
gives an underfill resin layer having an elastic modulus in
tension at 25°C of from 300 to 15,000 MPa when hardened can
provide a semiconductor device which exerts an excellent effect
of relaxing the stress on the semiconductor element, printed
circuit board and connecting electrode portions and thus
exhibits a high reliability.

Manufacture of semiconductor device

PROBLEM TO BE SOLVED: To provide a manufacturing method for manufacturing a semiconductor device equipped with a semiconductor element which suppresses variations of characteristics. SOLUTION: The manufacturing method of the semiconductor device comprises a process for forming a slit SL in at least one part between a first region Sa and a second region Sb of a semiconductor layer Se, a process for forming a mask layer M having a first opening unit Oa and a second opening unit Ob, a process for crystallizing the first region Sa and the second region Sb of the semiconductor layer Se by introducing a catalyst element Ct into the first region Sa and the second region Sb of the semiconductor layer Se, and a process for manufacturing the semiconductor element 120 and the semiconductor element 140 employing the first island type semiconductor layer 122 and the second island type semiconductor layer 142 which are formed by patterning the first region Sa and the second region Sb of the semiconductor layer Se. COPYRIGHT: (C)2010,JPO&INPIT

Manufacturing method of semiconductor device

PROBLEM TO BE SOLVED: To provide a platform door device for opening and closing a door while a guide rail is covered when the guide rail for opening and closing the door is provided on the door side in order to provide a compact door pocket. SOLUTION: The platform door device in which a sliding door type door panel 2, door pocket panels 3 to store the door panel, and a partition panel 4 provided between the door pocket panels are arranged in one row along an entrance/exit side edge of a platform includes: a rail 7 provided on a panel surface along the opening/closing direction of the door panel 2; a cover 18 provided on the door panel 2 to cover the rail 7 and having a hollow passage 19 communicating with an inner side thereof in the door panel opening/closing direction; and a rail guide 8 provided on the door pocket panels 3 to slidably guide the rail 7. In the opening operation of the door panels 2, a door opening/closing driving device A provided on the door pocket panels 3 and the rail guide 8 pass through the passage 19. COPYRIGHT: (C)2010,JPO&INPIT

Method of forming silicon oxide territory

Citations

Solar cell module

Semiconductor substrate for a one-chip electronic device and related manufacturing method

Manufacture of semiconductor device

Manufacturing method of semiconductor device

Platform door device

References

Method of making film capacitors