Patent
Microwave FET power oscillator
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TLDR
In this paper, the first and second field effect transistors (FETs) are mounted in a flip-chip carrier that connects the first electrodes to ground and the gate of the first FET is connected to a resonator.Abstract:
First and second field effect transistors (FETs) each have a gallium arsenide substrate with an N-type active region that carries first and second electrodes in ohmic contact therewith and a gate electrode. The FETs are mounted in a flip-chip carrier that connects the first electrodes to ground. The FETs are biased to cause a current to flow from the first to second electrodes, whereby the first and second electrodes serve as drains and sources, respectively, of the FETs. The gate of the first FET is connected to a resonator. Additionally, a matching network connects the source of the first FET to the gate of the second FET. The matching network and the biasing of the first FET cause the gate input impedance thereof to be of a negative value that compensates for losses in the resonator. A load connected to the source of the second FET and the bias voltage cause the second FET to have a gate input impedance of a negative value that causes oscillation.read more
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References
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Patent
Reverse channel GaAsFET oscillator
TL;DR: In this article, a common-drain high frequency power oscillator is configured by electrically reversing the channel of a GaAsFET transistor, which can be flip-chip mounted for reduced thermal resistance and has superior oscillation characteristics as compared with conventional common-source oscillators.
Proceedings ArticleDOI
A high-power microwave GaAs FET oscillator
TL;DR: In this article, an integrated circuit GaAs FET with an oscillator power output of 220 mW and a power-added efficiency of 21% obtained at 6 GHz, was discussed.